SIHB22N60S-E3 [VISHAY]
S Series Power MOSFET; S系列功率MOSFET型号: | SIHB22N60S-E3 |
厂家: | VISHAY |
描述: | S Series Power MOSFET |
文件: | 总7页 (文件大小:151K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SiHB22N60S
Vishay Siliconix
www.vishay.com
S Series Power MOSFET
FEATURES
• Generation One
PRODUCT SUMMARY
VDS at TJ max. (V)
DS(on) max. at 25 °C ()
Qg max. (nC)
650
• Halogen-free According to IEC 61249-2-21
Definition
R
VGS = 10 V
0.190
98
17
25
• High EAR Capability
• Lower Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Ultra Low Ron
Q
gs (nC)
gd (nC)
Q
Configuration
Single
• dV/dt Ruggedness
D
D2PAK (TO-263)
• Ultra Low Gate Charge (Qg)
• Compliant to RoHS Directive 2002/95/EC
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
G
D
S
APPLICATIONS
• PFC Power Supply Stages
• Hard Switching Topologies
• Solar Inverters
• UPS
G
S
N-Channel MOSFET
• Motor Control
• Lighting
• Server Telecom
ORDERING INFORMATION
Package
D2PAK (TO-263)
SiHB22N60S-GE3
SiHB22N60S-E3
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
600
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
V
VGS
30
T
C = 25 °C
22
Continuous Drain Current
VGS at 10 V
ID
TC = 100 °C
13
A
Pulsed Drain Currenta
Linear Derating Factor
IDM
65
D2PAK
(TO-263)
2
W/°C
mJ
Single Pulse Avalanche Energyb
Repetitive Avalanche Energya
EAS
EAR
690
25
D2PAK
(TO-263)
Maximum Power Dissipation
PD
250
W
TJ = 125 °C
Drain-Source Voltage Slope
Reverse Diode dV/dtd
37
5.3
dV/dt
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c
TJ, Tstg
- 55 to + 150
300
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S11-1882-Rev. E, 26-Sep-11
Document Number: 91395
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60S
Vishay Siliconix
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
D2PAK (TO-263)
D2PAK (TO-263)
-
-
°C/W
Maximum Junction-to-Case (Drain)
RthJC
0.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
600
-
-
-
V
V/°C
V
VDS Temperature Coefficient
-
2.0
-
0.70
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
-
4.0
100
1
VGS
=
20 V
-
-
nA
VDS = 600 V, VGS = 0 V
-
Zero Gate Voltage Drain Current
IDSS
μA
VDS = 600 V, VGS = 0 V, TJ = 150 °C
-
-
100
0.190
-
Drain-Source On-State Resistance
Forward Transconductancea
Dynamic
RDS(on)
gfs
VGS = 10 V
ID = 11 A
-
0.160
9.4
VDS = 50 V, ID = 13 A
-
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
2810
1480
33
-
-
-
VGS = 0 V,
Output Capacitance
VDS = 25 V,
f = 1.0 MHz
pF
nC
Reverse Transfer Capacitance
Effective Output Capacitance
(Time Related)
C
oss eff. (TR)a
VGS = 0 V
VDS = 0 V to 480 V
-
155
-
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
-
75
17
110
-
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
VGS = 10 V
ID = 22 A, VDS = 480 V
25
-
24
50
100
115
90
-
68
VDD = 380 V, ID = 22 A,
Rg = 9.1 , VGS = 10 V
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
77
59
Gate Input Resistance
Drain-Source Body Diode Characteristics
Rg
f = 1 MHz, open drain
0.65
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
IS
-
-
-
-
22
88
A
G
ISM
S
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
TJ = 25 °C, IS = 22 A, VGS = 0 V
-
-
-
-
-
1.2
690
16
V
ns
μC
A
462
8.3
30
TJ = 25 °C, IF = IS,
dI/dt = 100 A/μs, VR = 25 V
Qrr
IRRM
60
Note
a. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
.
S11-1882-Rev. E, 26-Sep-11
Document Number: 91395
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60S
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
50
40
30
20
10
0
50
VGS
TJ = 25 °C
Top 15 V
14 V
13 V
12 V
11 V
40
30
20
10
0
10 V
9 V
8 V
7 V
6 V
5 V
Bottom 4 V
TJ = 150 °C
TJ = 25 °C
4 V
2
4
6
8
10
0
4
8
12
16
20
24
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TJ = 25 °C
Fig. 3 - Typical Transfer Characteristics
30
3.5
3
VGS
Top 15 V
14 V
ID = 22 A
VGS = 10 V
24
13 V
12 V
11 V
2.5
2
10 V
9 V
18
12
6
8 V
7 V
1.5
1
6 V
5 V
Bottom 4 V
0.5
TJ = 150 °C
4.0 V
0
0
- 60 - 40 - 20
0
20 40 60 80 100 120140 160 180
0
4
8
12
16
20
24
TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TJ = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S11-1882-Rev. E, 26-Sep-11
Document Number: 91395
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60S
Vishay Siliconix
www.vishay.com
1000
100
100 000
10 000
1000
100
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd • Cds shorted
Crss = Cgd
Coss = Cds + Cgd
Coss
10
TJ = 150 °C
TJ = 25 °C
Ciss
1
0.1
0.01
0.001
0.0001
Crss
VGS = 0 V
1.2 1.4
10
0.2
0.4
0.6
0.8
1
1
10
100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
12.0
ID = 22 A
V
DS = 480 V
DS = 300 V
DS = 120 V
Operation in this area limited
by RDS(on)
10.0
8.0
6.0
4.0
2.0
0.0
V
100
10
1
V
100 µs
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
0.1
0
10 20 30 40 50 60 70 80 90 100
QG, Total Gate Charge (nC)
1
10
100
1000
10 000
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S11-1882-Rev. E, 26-Sep-11
Document Number: 91395
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60S
Vishay Siliconix
www.vishay.com
25
20
15
10
5
725
700
675
650
625
600
575
550
0
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
TJ, Junction Temperature (°C)
Fig. 10 - Drain-to-Source Breakdown Voltage
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-2
0.1
1
10-3
Square Wave Pulse Duration (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
L
RD
VDS
VDS
Vary tp to obtain
required IAS
VGS
D.U.T.
Rg
Rg
D.U.T
+
-
+
-
V
VDD
DD
IAS
10 V
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
0.01 W
tp
Fig. 11a - Switching Time Test Circuit
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
90 %
tp
VDD
VDS
10 %
VGS
td(on) tr
td(off) tf
IAS
Fig. 11b - Switching Time Waveforms
Fig. 12b - Unclamped Inductive Waveforms
S11-1882-Rev. E, 26-Sep-11
Document Number: 91395
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHB22N60S
Vishay Siliconix
www.vishay.com
Current regulator
Same type as D.U.T.
QG
VGS
50 kΩ
12 V
0.2 µF
0.3 µF
QGS
QGD
+
VDS
D.U.T.
-
VG
VGS
3 mA
Charge
Fig. 13a - Basic Gate Charge Waveform
IG
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
ID
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
D.U.T.
•
•
•
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
+
-
-
+
Rg
•
•
•
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
+
-
VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
Period
D =
P.W.
VGS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91395.
S11-1882-Rev. E, 26-Sep-11
Document Number: 91395
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
Document Number: 91000
1
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