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SUB75N03-04 [VISHAY]

N-Channel 30-V (D-S), 175C MOSFET; N沟道30 V（D -S）， 175 ℃下的MOSFET
SUB75N03-04
型号： SUB75N03-04
厂家： VISHAY    VISHAY
描述：

N-Channel 30-V (D-S), 175C MOSFET
N沟道30 V（D -S）， 175 ℃下的MOSFET
文件： 总4页 (文件大小：43K)
中文：  中文翻译
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SUP/SUB75N03-04  
Vishay Siliconix  
N-Channel 30-V (D-S), 175_C MOSFET  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
a
30  
0.004  
75  
D
TO-220AB  
TO-263  
G
DRAIN connected to TAB  
DRAIN connected to TAB  
G
D S  
Top View  
SUB75N03-04  
G D  
S
S
Top View  
SUP75N03-04  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Gate-Source Voltage  
V
GS  
"20  
V
a
T
= 25_C  
75  
C
Continuous Drain Current  
I
D
a
(T = 175_C)  
J
T
= 125_C  
75  
C
Pulsed Drain Current  
I
250  
75  
A
DM  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
S
I
75  
AR  
Avalanche Energy  
L = 0.1 mH  
E
280  
140  
AS  
AR  
mJ  
W
b
Repetitive Avalanche Energy  
L = 0.05 mH  
E
c
T
= 25_C (TO-220AB and TO-263)  
187  
C
Maximum Power Dissipation  
P
D
d
T
A
= 25_C (TO-263)  
3.7  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 175  
stg  
_C  
Lead Temperature  
1
TO-220AB  
T
300  
L
( / ” from case for 10 sec.)  
16  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
PCB Mount (TO-263)  
40  
62.5  
0.6  
Junction-to-Ambient  
Junction-to-Case  
R
thJA  
R
thJC  
Free Air (TO-220AB)  
_C/W  
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70745  
S-04137—Rev. E, 18-Jun-01  
www.vishay.com  
2-1  
SUP/SUB75N03-04  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= 0 V, I = 250 mA  
30  
1
(BR)DSS  
GS  
D
V
V
V
V
= V , I = 250 mA  
3
"500  
1
GS(th)  
DS  
GS  
D
= 0 V, V = "20 V  
I
nA  
DS  
GS  
GSS  
V
= 30 V, V = 0 V  
GS  
DS  
V
V
= 30 V, V = 0 V, T = 125_C  
50  
Zero Gate Voltage Drain Current  
I
mA  
DS  
GS  
J
DSS  
= 30 V, V = 0 V, T = 175_C  
200  
DS  
GS  
J
b
On-State Drain Current  
I
V
DS  
= 5 V, V = 10 V  
120  
A
D(on)  
GS  
V
= 10 V, I = 75 A  
0.0034  
0.005  
0.004  
0.006  
0.006  
0.008  
GS  
D
V
GS  
= 4.5 V, I = 75 A  
D
b
Drain-Source On-State Resistance  
r
W
DS(on)  
V
V
= 10 V, I = 25 A, T = 125_C  
GS  
D
J
= 10 V, I = 25 A, T = 175_C  
GS  
D
J
b
Forward Transconductance  
g
fs  
V
= 15 V, I = 25 A  
30  
S
DS  
D
Dynamic  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
C
10742  
1811  
775  
200  
40  
iss  
C
oss  
V
= 0 V, V = 25 V, f = 1 MHz  
pF  
nC  
GS  
DS  
C
rss  
Q
250  
40  
g
Q
Q
V
DS  
= 30 V, V = 10 V, I = 75 A  
GS D  
gs  
gd  
40  
t
20  
d(on)  
t
40  
r
V
DD  
= 30 V, R = 0.6 W  
L
= 10 V, R = 2.5 W  
GEN G  
ns  
I
^ 50 A, V  
D
Turn-Off Delay Time  
Fall Time  
t
190  
95  
d(off)  
t
f
Source-Drain Diode Ratings and Characteristics  
b
Diode Forward Voltage  
V
I
= 75 A, V = 0 V  
1.3  
120  
6
V
ns  
A
SD  
F
GS  
Reverse Recovery Time  
Peak Reverse Recovery Current  
Reverse Recovery Charge  
t
70  
2.8  
0.1  
rr  
RM(rec)  
I
I
F
= 50 A, di/dt = 100 A/ms  
Q
0.36  
mC  
rr  
Notes:  
a. For design aid only; not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
Document Number: 70745  
www.vishay.com  
S-04137—Rev. E, 18-Jun-01  
2-2  
SUP/SUB75N03-04  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
250  
200  
150  
100  
50  
V
GS  
= 10, 9, 8, 7, 6, 5 V  
200  
150  
100  
50  
4 V  
T
= 125_C  
C
3 V  
8
25_C  
–55_C  
0
0
0
2
4
6
10  
0
1
2
3
4
5
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
175  
150  
125  
100  
75  
0.008  
0.006  
0.004  
0.002  
0.000  
25_C  
T
= –55_C  
C
125_C  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
50  
25  
0
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
120  
V
GS  
– Gate-to-Source Voltage (V)  
I
D
– Drain Current (A)  
Capacitance  
Gate Charge  
14000  
12000  
10000  
8000  
6000  
4000  
2000  
0
20  
16  
12  
8
C
iss  
V
= 30 V  
= 75 A  
DS  
I
D
C
oss  
4
C
rss  
0
0
6
12  
18  
24  
30  
0
100  
200  
300  
400  
V
DS  
– Drain-to-Source Voltage (V)  
Q
– Total Gate Charge (nC)  
g
Document Number: 70745  
www.vishay.com  
S-04137—Rev. E, 18-Jun-01  
2-3  
SUP/SUB75N03-04  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistancevs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.5  
100  
V
= 10 V  
= 30 A  
GS  
I
D
2.0  
1.5  
1.0  
0.5  
0.0  
T
= 150_C  
J
T
= 25_C  
J
10  
1
–50 –25  
0
25  
50  
75 100 125 150 175  
0.3  
0.6  
0.9  
1.2  
1.5  
T
– Junction Temperature (_C)  
V
SD  
– Source-to-Drain Voltage (V)  
J
THERMAL RATINGS  
Maximum Avalanche and Drain Current  
vs. Case Temperature  
Safe Operating Area  
100  
80  
60  
40  
20  
0
100 ms  
Limited  
by r  
DS(on)  
100  
10  
1
1 ms  
10 ms  
100 ms  
dc  
T
= 25_C  
C
Single Pulse  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1.0  
10.0  
T
– Case Temperature (_C)  
V
DS  
– Drain-to-Source Voltage (V)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
–5  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
10  
1
3
Square Wave Pulse Duration (sec)  
Document Number: 70745  
www.vishay.com  
S-04137—Rev. E, 18-Jun-01  
2-4  

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