SUB75P03-07-E3 [VISHAY]
P-Channel 30-V (D-S) 175 °C MOSFET; P通道30 -V （ D- S） 175℃ MOSFET
| 型号： | SUB75P03-07-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) 175 °C MOSFET |
| 文件： | 总6页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB75P03-07
Vishay Siliconix
P-Channel 30-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
I
D (A)a
75
VDS (V)
rDS(on) (Ω)
Available
0.007 at VGS = - 10 V
0.010 at VGS = - 4.5 V
RoHS*
- 30
COMPLIANT
75
TO-263
TO-220AB
S
G
D S
Top View
DRAIN connected to TAB
SUB75P03-07
G
G D S
Top View
SUP75P03-07
Ordering Information: SUB75P03-07 (TO-263)
D
SUB75P03-07-E3 (TO-263, Lead (Pb)-free)
SUP75P03-07 (TO-220AB)
SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
Unit
VGS
Gate-Source Voltage
20
V
- 75a
- 65
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
ID
TC = 125 °C
A
IDM
IAR
Pulsed Drain Current
Avalanche Current
- 240
- 60
Repetitive Avalanche Energyb
EAR
L = 0.1 mH
180
mJ
W
187d
3.75
TC = 25 °C (TO-220AB and TO-263)
PD
Power Dissipation
T
A = 25 °C (TO-263)c
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
40
Unit
PCB Mount (TO-263)c
Free Air (TO-220AB)
RthJA
Junction-to-Ambient
62.5
0.8
°C/W
RthJC
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. When Mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71109
S-72688-Rev. D, 24-Dec-07
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SUP/SUB75P03-07
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
Drain-Source Breakdown Voltage
- 30
- 1
V
Gate Threshold Voltage
Gate-Body Leakage
- 3
100
- 1
VDS = 0 V, VGS
=
20 V
nA
VDS = - 30 V, VGS = 0 V
DS = - 30 V, VGS = 0 V, TJ = 125 °C
DS = - 30 V, VGS = 0 V, TJ = 175 °C
VDS = - 5 V, VGS = - 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
- 50
- 250
µA
A
ID(on)
- 120
VGS = - 10 V, ID = - 30 A
0.0055
0.008
0.007
0.010
0.013
0.010
V
V
GS = - 10 V, ID = - 30 A, TJ = 125 °C
GS = - 10 V, ID = - 30 A, TJ = 175 °C
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = - 4.5 V, ID = - 20 A
Forward Transconductancea
Dynamicb
gfs
VDS = - 15 V, ID = - 75 A
20
S
Ciss
Coss
Crss
Qg
Input Capacitance
9000
1565
715
160
32
VGS = 0 V, VDS = - 25 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 75 A
Output Capacitance
pF
nC
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
240
Qgs
Qgd
td(on)
tr
30
25
40
225
150
210
360
240
340
V
DD = - 15 V, RL = 0.2 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ - 75 A, VGEN = - 10 V, RG = 2.5 Ω
td(off)
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
ISM
Continuous Current
- 75
- 240
- 1.5
100
5
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = - 75 A, VGS = 0 V
- 1.2
55
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = - 75 A, di/dt = 100 A/µs
2.5
0.07
0.25
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71109
S-72688-Rev. D, 24-Dec-07
SUP/SUB75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
200
160
120
80
250
T
= - 55 °C
C
V
GS
= 10 thru 6 V
25 °C
200
150
100
50
5 V
125 °C
4 V
3 V
40
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
GS
-
Gate-to-Source Voltage (V)
V
DS
-
Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
150
T
C
= - 55 °C
0.025
0.020
0.015
0.010
0.005
0
120
90
60
30
0
25 °C
125 °C
V
= 4.5 V
GS
V
GS
= 10 V
0
20
40
60
80
100
120
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
16
12
8
12000
10000
8000
6000
4000
2000
0
V
= 15 V
= 75 A
DS
C
iss
I
D
C
oss
4
C
rss
0
0
50
100
150
200
250
300
0
6
12
18
24
30
Q
g
-
Total Gate Charge (nC)
V
DS
-
Drain-to-Source Voltage (V)
Capacitance
Gate Charge
Document Number: 71109
S-72688-Rev. D, 24-Dec-07
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3
SUP/SUB75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.8
100
V
= 10 V
= 30 A
GS
I
D
1.5
1.2
0.9
0.6
0.3
0
T = 150 °C
J
10
T = 25 °C
J
1
- 50 - 25
0
25
50
75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
T
J
-
Junction Temperature (°C)
V
SD
-
Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
45
40
35
30
25
I
D
= 250 µA
I
AV
(A) at T = 25 °C
A
10
1
I
AV
(A) at T = 150 °C
A
0.1
- 50 - 25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(s)
T
J
- Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
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Document Number: 71109
S-72688-Rev. D, 24-Dec-07
SUP/SUB75P03-07
Vishay Siliconix
THERMAL RATINGS
1000
90
10 µs
75
60
45
30
15
0
100
10
100 µs
Limited
by r
*
1 ms
DS(on)
10 ms
100 ms
DC
1
T
= 25 °C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
T
- Case Temperature (°C)
C
* V
minimum V at which r
is specified
GS
DS(on)
GS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
- 3
- 2
- 1
- 4
10
10
10
1
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71109.
Document Number: 71109
S-72688-Rev. D, 24-Dec-07
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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