SUM110N08-10-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SUM110N08-10-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总7页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110N08-10
New Product
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
TrenchFET® Power MOSFET
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Available
New Low Thermal Resistance Package
75
0.010 at VGS = 10 V
110
RoHS*
COMPLIANT
APPLICATIONS
•
Automotive
- Boardnet 42-VEP and ABS
- Motor Drives
•
•
High Current
DC/DC Converters
D
TO-263
G
G
D S
Top View
S
N-Channel MOSFET
Ordering Information: SUM110N08-10
SUM110N08-10-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
75
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
TC = 25 °C
110
63a
Continuous Drain Current (TJ = 175 °C)
ID
TC = 125 °C
A
IDM
IAR
350
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
75
L = 0.1 mH
EAR
280
200b
mJ
W
TC = 25 °C
Maximum Power Dissipationa
PD
TA = 25 °Cc
3.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Limit
40
Unit
PCB Mountc
Maximum Junction-to-Ambient
Maximum Junction-to-Case
°C/W
RthJC
0.75
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71838
S-60418–Rev. D, 20-Mar-06
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SUM110N08-10
Vishay Siliconix
New Product
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
V(BR)DSS
VGS(th)
IGSS
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
75
V
2.5
4.0
100
1
VDS = 0 V, VGS
=
20 V
nA
VDS = 75 V, VGS = 0 V
VDS = 75 V, VGS = 0 V, TJ = 125 °C
VDS = 75 V, VGS = 0 V, TJ = 175 °C
VDS = ≥ 5 V, VGS = 10 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
rDS(on)
gfs
50
µA
A
250
120
30
VGS = 10 V, ID = 30 A
0.0055
0.010
0.0185
0.0245
Drain-Source On-State Resistancea
VGS = 10 V, ID = 30 A, TJ = 125 °C
VGS = 10 V, ID = 30 A, TJ = 175 °C
VDS = 15 V, ID = 30 A
Ω
S
Forward Transconductance
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Ciss
Coss
Crss
Qg
5250
700
310
90
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 35 V, VGS = 10 V, ID = 110 A
pF
nC
165
Qgs
Qgd
td(on)
tr
24
27
20
30
150
70
100
45
VDD = 35 V, RL = 0.4 Ω
ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω
ns
Turn-Off DelayTimec
Fall Timec
td(off)
tf
75
115
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
Continous Current
IS
ISM
110
350
1.5
120
7
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 110 A, VGS = 0 V
1.0
75
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = 85 A, di/dt = 100 A/µs
3.5
0.13
µC
0.30
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71838
S-60418–Rev. D, 20-Mar-06
SUM110N08-10
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
250
200
150
100
50
200
160
120
80
V
GS
= 10 thru 6 V
5 V
T
= 125 °C
C
40
25 °C
3
- 55 °C
5
0
0
0
2
4
6
8
10
0
1
2
4
6
V
DS
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
V
GS
Output Characteristics
Transfer Characteristics
200
160
120
80
0.010
0.008
0.006
0.004
0.002
0.000
T
= - 55 °C
C
25 °C
V
GS
= 10 V
125 °C
40
0
0
15
30
45
60
75
90
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
8000
7000
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
D
= 35 V
DS
= 85 A
I
C
iss
C
rss
4
C
oss
0
0
15
30
45
60
75
0
30
60
90
120
150
180
V
DS
– Drain-to-Source Voltage (V)
Q
– Total Gate Charge (nC)
g
Capacitance
Gate Charge
Document Number: 71838
S-60418–Rev. D, 20-Mar-06
www.vishay.com
3
SUM110N08-10
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
2.5
2.0
1.5
1.0
0.5
0.0
100
V
D
= 10 V
GS
= 30 A
I
T = 150 °C
J
T = 25 °C
J
10
1
- 50 - 25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
T
– Junction Temperature (°C)
V
– Source-to-Drain Voltage (V)
J
SourScDe-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
1000
100
100
94
88
82
76
70
I
D
= 250 µA
10
1
I
(A) at T = 25 °C
AV A
I
AV
(A) at T = 150 °C
A
0.1
- 50 - 25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
T
– Junction Temperature (°C)
t
in
J
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
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Document Number: 71838
S-60418–Rev. D, 20-Mar-06
SUM110N08-10
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
1000
120
100
80
60
40
20
0
Limited
by r
DS(on)
10 µs
100 µs
1 ms
100
10
10 ms
100 ms
dc
1
T
= 25 °C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
T
– Ambient Temperature (°C)
V
DS
– Drain-to-Source Voltage (V)
C
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71838.
Document Number: 71838
S-60418–Rev. D, 20-Mar-06
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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