SUM90N08-6M2P-E3 [VISHAY]
N-Channel 75-V (D-S) MOSFET; N通道75 -V （D -S ）的MOSFET
| 型号： | SUM90N08-6M2P-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 75-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM90N08-6m2P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFETS
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
175 °C Junction Temperature
100 % Rg and UIS Tested
90d
0.0062 at VGS = 10 V
75
75
RoHS
COMPLIANT
APPLICATIONS
•
Power Supply
- Secondary Synchronous Rectification
•
Industrial
D
TO-263
G
G
D S
Top View
S
Ordering Information: SUM90N08-6m2P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
75
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
90d
TC = 25 °C
TC = 70 °C
Continuous Drain Current (TJ = 175 °C)
ID
90d
240
50
A
IDM
IAS
Pulsed Drain Current
Avalanche Current
Single Avalanche Energya
EAS
L = 0.1 mH
TC = 25 °C
125
mJ
W
272b
3.75
Maximum Power Dissipationa
PD
T
A = 25 °Cc
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Symbol
Limit
40
Unit
RthJA
°C/W
RthJC
Junction-to-Case (Drain)
0.55
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69552
S-72505-Rev. A, 03-Dec-07
www.vishay.com
1
SUM90N08-6m2P
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Typ
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
75
V
Gate Threshold Voltage
Gate-Body Leakage
2.5
4.5
250
1
VDS = 0 V, VGS
=
20 V
nA
VDS = 75 V, VGS = 0 V
DS = 75 V, VGS = 0 V, TJ = 125 °C
DS = 75 V, VGS = 0 V, TJ = 150 °C
VDS ≥ 10 V, VGS = 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
50
µA
250
On-State Drain Currenta
ID(on)
rDS(on)
gfs
70
A
Ω
S
VGS = 10 V, ID = 20 A
0.0051
0.0082
50
0.0062
0.0105
Drain-Source On-State Resistancea
V
GS = 10 V, ID = 20 A, TJ = 125 °C
VDS = 15 V, ID = 20 A
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
4620
517
247
75
VGS = 0 V, VDS = 30 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
115
Qgs
Qgd
Rg
VDS = 30 V, VGS = 10 V, ID = 50 A
f = 1 MHz
25.5
20
nC
1.2
16
2.4
30
20
40
20
Ω
td(on)
tr
td(off)
tf
11
V
DD = 30 V, RL = 0.6 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω
24
10
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
Continuous Current
85
240
1.5
100
5
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 20 A, VGS = 0 V
0.83
60
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = 75 A, di/dt = 100 A/µs
3.3
100
150
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69552
S-72505-Rev. A, 03-Dec-07
SUM90N08-6m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
120
100
80
60
40
20
0
V
GS
= 10 V thru 7 V
100
80
60
40
20
0
V
= 6 V
GS
T
= 125 °C
C
V
GS
= 5 V
25 °C
- 55 °C
6
0
1
2
3
4
5
0
2
4
8
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics (SUM)
Transfer Characteristics
0.0057
100
80
60
40
20
0
T
= - 55 °C
25 °C
C
0.0055
0.0053
0.0051
0.0049
0.0047
V
GS
= 10 V
125 °C
0
20
40
60
80
100
0
12
24
36
48
60
I
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
D
On-Resistance vs. Drain Current (SUM)
Transconductance
0.05
0.04
0.03
0.02
0.01
0
6000
4800
3600
2400
1200
0
I
= 20 A
D
C
iss
T
= 25 °C
A
C
oss
T
= 150 °C
8
A
C
rss
4
5
6
7
9
10
0
15
30
45
60
75
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage (SUM)
Capacitance
Document Number: 69552
S-72505-Rev. A, 03-Dec-07
www.vishay.com
3
SUM90N08-6m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.0
I
D
= 50 A
I
D
= 20 A
V
DS
= 30 V
8
1.7
1.4
1.1
0.8
0.5
V
= 10 V
GS
6
V
DS
= 60 V
4
2
0
0
17
34
51
68
85
- 50 - 25
0
T
25
50
75 100 125 150 175
- Junction Temperature (°C)
J
Q
- Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
0.8
0.2
100
10
150 °C
I
D
= 5 mA
- 0.4
- 1.0
- 1.6
- 2.2
1.0
25 °C
0.1
0.01
I
D
= 250 µA
0.001
- 50 - 25
0
25
50
75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
J
Threshold Voltage
Source-Drain Diode Forward Voltage
94
100
I
D
= 1 mA
90
86
82
78
74
150 °C
25 °C
10
1
0.00001 0.0001
0.001
0.01
(s)
0.1
- 50 - 25
0
25
50
75 100 125 150 175
1.0
T
AV
T
- Junction Temperature (°C)
J
Single Pulse Avalanche Current Capability
vs. Time
Drain source Breakdown vs. Junction Temperature
www.vishay.com
4
Document Number: 69552
S-72505-Rev. A, 03-Dec-07
SUM90N08-6m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
160
128
96
64
32
0
1000
100
10
Limited by r
*
DS(on)
100 µs
Package Limited
1 ms
10 ms
100 ms
DC
1
T
= 25 °C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
T
C
- Case Temperature (°C)
* V
GS
minimum V at which r
is specified
GS
DS(on)
Maximum Drain Current vs. Case Temperature (SUM)
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69552.
Document Number: 69552
S-72505-Rev. A, 03-Dec-07
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
©2020 ICPDF网 联系我们和版权申明