TSML3700 [VISHAY]

GaAs/GaAlAs Infrared Emitting Diode in SMT Package; 的GaAs / GaAlAs的红外发光二极管在SMT封装


型号：	TSML3700
厂家：	VISHAY
描述：	GaAs/GaAlAs Infrared Emitting Diode in SMT Package 的GaAs / GaAlAs的红外发光二极管在SMT封装半导体红外LED 光电二极管
文件：	总6页 (文件大小：58K)
中文：	中文翻译
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TSML3700

Vishay Telefunken

GaAs/GaAlAs Infrared Emitting Diode in SMT Package

Description

TSML3700 is an infrared emitting diode in GaAlAs on

GaAs technology in a miniature PL–CC–2 SMD pack-

age.

It has been designed to meet the increasing demand

on optoelectronic devices for surface mounting.

The package consists of a lead frame which is sur-

rounded with a white thermoplast. The reflector inside

the package is filled up with clear epoxy.

This new package achieves an improvement of 100%

in radiant intensity, compared with the old SOT–23

package.

94 8553

Features

SMT IRED with extra high radiant power

Low forward voltage

Compatible with automatic placement equipment

EIA and ICE standard package

Suitable for infrared, vapor phase and wave-

solder process

Available in 8 mm tape

Suitable for pulse current operation

Extra wide angle of half intensity ϕ = ± 60

Peak wavelength = 925 nm

High reliability

Matching to TEMT3700 phototransistor

Applications

Infrared source in tactile keyboards

IR diode in low space applications

Matching with phototransistor TEMT3700 in reflective sensors

High performance PCB mounted infrared sensors

High power infrared emitter for miniature light barriers

Document Number 81034

Rev. 3, 20-May-99

www.vishay.com

1 (6)

TSML3700

Vishay Telefunken

Absolute Maximum Ratings

amb

= 25 C

Parameter

Reverse Voltage

Test Conditions

Symbol

Value

Unit

Forward Current

100

200

170

K/W

Peak Forward Current

Surge Forward Current

Power Dissipation

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

t /T = 0.5, t = 100 s

t = 100 s

FSM

100

–55...+100

260

amb

stg

10sec

450

thJA

Basic Characteristics

amb

= 25 C

Parameter

Forward Voltage

Test Conditions

I = 100 mA, t = 20 ms

Symbol Min

Typ

1.3

2.2

Max

1.7

Unit

I = 1 A, t = 100 s

Temp. Coefficient of V

Reverse Current

I = 100mA

V = 5 V

–1.3

mV/K

100

Junction Capacitance

Radiant Intensity

V = 0 V, f = 1 MHz, E = 0

I = 100 mA, t = 20 ms

2.5

mW/sr

%/K

deg

nm/K

I = 1 A, t = 100 s

Radiant Power

I = 100 mA, t = 20 ms

Temp. Coefficient of

Angle of Half Intensity

Peak Wavelength

Spectral Bandwidth

Temp. Coefficient of

Rise Time

I = 100 mA

–0.8

±60

925

0.2

800

500

800

500

I = 100 mA

I = 20 mA

I = 1 A

Fall Time

I = 20 mA

I = 1 A

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2 (6)

Document Number 81034

Rev. 3, 20-May-99

TSML3700

Vishay Telefunken

Typical Characteristics (T_amb= 25 C unless otherwise specified)

250

200

150

100

thJA

t = 100

t /T = 0.001

100

94 8029 e

amb

– Ambient Temperature ( °C )

94 7952 e

– Forward Voltage ( V )

Figure 1. Power Dissipation vs. Ambient Temperature

Figure 4. Forward Current vs. Forward Voltage

125

1.2

100

1.1

I = 10 mA

1.0

0.9

0.8

0.7

thJA

100

94 7916 e

amb

– Ambient Temperature ( °C )

94 7990 e

amb

– Ambient Temperature ( °C )

Figure 2. Forward Current vs. Ambient Temperature

Figure 5. Relative Forward Voltage vs.

Ambient Temperature

10000

100

amb

60°C

t /T=0.005

0.01

1000

100

0.02

0.05

0.2

0.5

0.1

0.01

0.1

100

0.1

I – Forward Current ( mA )

95 9985

t – Pulse Length ( ms )

15903

Figure 3. Pulse Forward Current vs. Pulse Duration

Figure 6. Radiant Intensity vs. Forward Current

Document Number 81034

Rev. 3, 20-May-99

www.vishay.com

3 (6)

TSML3700

Vishay Telefunken

1.25

1.0

1000

100

0.75

0.5

0.25

= 100 mA

925

0.1

975

875

94 8740

– Forward Current ( mA )

12757

– Wavelength ( nm )

Figure 9. Relative Radiant Power vs. Wavelength

Figure 7. Radiant Power vs. Forward Current

0°

1.6

30°

1.2

= 20 mA

40°

1.0

0.9

0.8

0.4

50°

60°

0.8

0.7

70°

80°

0.6

140

0.6

0.4

0.2

0.4

–10 0 10

100

94 8013 e

94 7993 e

amb

– Ambient Temperature ( °C )

Figure 8. Rel. Radiant Intensity\Power vs.

Ambient Temperature

Figure 10. Relative Radiant Intensity vs.

Angular Displacement

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4 (6)

Document Number 81034

Rev. 3, 20-May-99

TSML3700

Vishay Telefunken

Dimensions in mm

95 11314

Document Number 81034

Rev. 3, 20-May-99

www.vishay.com

5 (6)

TSML3700

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com

6 (6)

Document Number 81034

Rev. 3, 20-May-99

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