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V40100PG-E3/45 [VISHAY]

Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器
V40100PG-E3/45
型号： V40100PG-E3/45
厂家： VISHAY    VISHAY
描述：

Dual High-Voltage Trench MOS Barrier Schottky Rectifier
双高压Trench MOS势垒肖特基整流器

整流二极管 高压
文件： 总5页 (文件大小：97K)
中文：  中文翻译
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V40100PG  
Vishay General Semiconductor  
New Product  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.420 V at I = 5 A  
F
F
FEATURES  
• Trench MOS Schottky Technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Low thermal resistance  
3
• Solder Dip 260 °C, 40 seconds  
2
1
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TO-247AD (TO-3P)  
TYPICAL APPLICATIONS  
PIN 2  
CASE  
PIN 1  
PIN 3  
For use in high frequency inverters, switching power  
supplies, free-wheeling diodes, oring diode, dc-to-dc  
converters and reverse battery protection.  
MAJOR RATINGS AND CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
2 x 20 A  
Case: TO-247AD (TO-3P)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
VRRM  
100 V  
IFSM  
250 A  
VF at IF = 20 A  
Tj max.  
0.67 V  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs Maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
V40100PG  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
V
per device  
Maximum average forward rectified (see Fig. 1)  
per diode  
40  
20  
IF(AV)  
A
A
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
250  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dv/dt  
1.0  
A
10000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
Breakdown voltage  
at IR = 1.0 mA TJ = 25 °C  
V(BR)  
100 (minimum)  
-
V
at IF = 5 A  
0.490  
0.572  
0.731  
-
-
IF = 10 A  
IF = 20 A  
TJ = 25 °C  
0.81  
Instantaneous forward voltage (1) per  
diode  
VF  
V
at IF = 5 A  
IF = 10 A  
IF = 20 A  
0.42  
0.50  
0.67  
-
-
TJ = 125 °C  
0.73  
Document Number 88972  
18-Aug-06  
www.vishay.com  
1
V40100PG  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
TJ = 25 °C  
TJ = 125 °C  
8.4  
7.4  
300  
15  
µA  
mA  
at VR = 70 V  
Reverse current at rated VR (1) per diode  
IR  
TJ = 25 °C  
TJ = 125 °C  
40.5  
18.2  
500  
35  
µA  
mA  
at VR = 100 V  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
V40100PG  
UNIT  
Typical thermal resistance per diode  
RθJC  
2.0  
°C/W  
ORDERING INFORMATION  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
V40100PG-E3/45  
6.109  
45  
30/Tube  
Tube  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
50  
16  
D = 0.8  
D = 0.5  
Resistive or Inductive Load  
14  
12  
10  
8
D = 0.3  
D = 0.2  
40  
30  
20  
D = 1.0  
D = 0.1  
T
6
4
2
0
10  
0
D = tp/T tp  
0
5
10  
15  
20  
25  
0
25  
50  
75  
100  
125  
150  
175  
Case Temperature (°C)  
Average Forward Current (A)  
Figure 1. Forward Current Derating Curve  
Figure 2. Forward Power Loss Characteristics Per Diode  
www.vishay.com  
2
Document Number 88972  
18-Aug-06  
V40100PG  
Vishay General Semiconductor  
10000  
300  
250  
200  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
150  
100  
1000  
50  
0
100  
0.1  
1
10  
100  
1
10  
100  
Number of Cycles at 60 Hz  
Reverse Voltage (V)  
Figure 3. Maximum Non-Repetitive Peak Forward Surge  
Current Per Diode  
Figure 6. Typical Junction Capacitance Per Diode  
100  
10  
Junction to Case  
TJ = 150 °C  
TJ = 125 °C  
10  
1
1
TJ = 25 °C  
0.1  
0.1  
0.01  
0.01  
0.1  
1
10  
100  
0
0.2  
0.4  
0.6  
0.8  
1.0  
t - Pulse Duration (s)  
Instantaneous Forward Voltage (V)  
Figure 4. Typical Instantaneous Forward Characteristics Per Diode  
Figure 7. Typical Transient Thermal Impedance Per Diode  
100  
TJ = 150 °C  
10  
TJ = 125 °C  
1
0.1  
0.01  
TJ = 25 °C  
0.001  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 5. Typical Reverse Characteristics Per Diode  
Document Number 88972  
18-Aug-06  
www.vishay.com  
3
V40100PG  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-247AD (TO-3P)  
0.245 (6.2)  
0.225 (5.7)  
0.645 (16.4)  
0.625 (15.9)  
0.203 (5.16)  
0.193 (4.90)  
0.078 REF  
(1.98)  
0.323 (8.2)  
0.313 (7.9)  
10  
30  
0.170  
(4.3)  
10  
TYP.  
BOTH SIDES  
0.840 (21.3)  
0.820 (20.8)  
0.142 (3.6)  
0.138 (3.5)  
1
REF.  
2
3
1
BOTH  
SIDES  
0.086 (2.18)  
0.076 (1.93)  
0.118 (3.0)  
0.108 (2.7)  
0.127 (3.22)  
0.117 (2.97)  
0.160 (4.1)  
0.140 (3.5)  
0.795 (20.2)  
0.775 (19.6)  
0.225 (5.7)  
0.205 (5.2)  
0.030 (0.76)  
0.020 (0.51)  
0.048 (1.22)  
0.044 (1.12)  
PIN 2  
PIN 1  
PIN 3  
CASE  
www.vishay.com  
4
Document Number 88972  
18-Aug-06  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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