VS-ETU1506-1-M3 [VISHAY]

Ultrafast recovery time;
VS-ETU1506-1-M3
型号: VS-ETU1506-1-M3
厂家: VISHAY    VISHAY
描述:

Ultrafast recovery time

文件: 总9页 (文件大小:199K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VS-ETU1506S-M3, VS-ETU1506-1-M3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Rectifier, 15 A FRED Pt®  
FEATURES  
• Low forward voltage drop  
• Ultrafast recovery time  
• 175 °C operating junction temperature  
• Low leakage current  
TO-263AB (D2PAK)  
TO-262AA  
• Designed and qualified according to  
JEDEC®-JESD 47  
Base  
cathode  
2
• Material categorization:  
for definitions of compliance please see  
2
www.vishay.com/doc?99912  
DESCRIPTION  
State of the art, ultralow VF, soft-switching ultrafast rectifiers  
optimized for Discontinuous (Critical) Mode (DCM) Power  
Factor Correction (PFC).  
3
1
N/C  
3
1
N/C  
Anode  
Anode  
VS-ETU1506S-M3  
VS-ETU1506-1-M3  
The minimized conduction loss, optimized stored charge  
and low recovery current minimized the switching losses  
and reduce over dissipation in the switching element and  
snubbers.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
The device is also intended for use as a freewheeling diode  
in power supplies and other power switching applications.  
IF(AV)  
15 A  
600 V  
VR  
APPLICATIONS  
VF at IF  
1.1 V  
AC/DC SMPS 70 W to 400 W  
trr (typ.)  
TJ max.  
Diode variation  
24 ns  
e.g. laptop and printer AC adaptors, desktop PC, TV and  
monitor, games units, and DVD AC/DC power supplies.  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Repetitive peak reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
V
IF(AV)  
TC = 143 °C  
TC = 25 °C  
15  
A
IFSM  
160  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 15 A  
600  
-
-
V
-
-
-
-
-
-
1.35  
1.1  
0.01  
20  
1.9  
1.3  
15  
200  
-
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
12  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 09-Jul-15  
Document Number: 93590  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506S-M3, VS-ETU1506-1-M3  
www.vishay.com  
Vishay Semiconductors  
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V  
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-
-
-
-
-
-
-
-
24  
28  
47  
-
36  
Reverse recovery time  
trr  
ns  
40  
TJ = 125 °C  
87  
-
IF = 15 A  
TJ = 25 °C  
5
-
Peak recovery current  
IRRM  
dIF/dt = 200 A/μs  
A
TJ = 125 °C  
9.0  
107  
430  
53  
-
VR = 390 V  
TJ = 25 °C  
-
Reverse recovery charge  
Qrr  
C
TJ = 125 °C  
-
Reverse recovery time  
Peak recovery current  
Reverse recovery charge  
trr  
-
ns  
A
IF = 15 A  
IRRM  
Qrr  
TJ = 125 °C  
dIF/dt = 800 A/μs  
25  
-
VR = 390 V  
730  
-
nC  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
-65  
-
175  
°C  
Thermal resistance,  
junction to case  
RthJC  
RthJA  
RthCS  
-
-
-
1.3  
-
1.51  
70  
-
°C/W  
Thermal resistance,  
junction to ambient  
Typical socket mount  
Thermal resistance,  
case to heatsink  
Mounting surface, flat, smooth and  
greased  
0.5  
-
-
2.0  
-
-
g
Weight  
0.07  
oz.  
6
(5)  
12  
(10)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
-
Case style D2PAK  
Case style TO-262  
ETU1506S  
ETU1506-1  
Revision: 09-Jul-15  
Document Number: 93590  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506S-M3, VS-ETU1506-1-M3  
www.vishay.com  
Vishay Semiconductors  
1000  
175 °C  
150 °C  
125 °C  
100 °C  
75 °C  
100  
10  
100  
1
0.1  
50 °C  
TJ = 175 °C  
0.01  
0.001  
0.0001  
25 °C  
500  
0
100  
200  
300  
400  
600  
Reverse Voltage - VR (V)  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
10  
1000  
TJ = 150 °C  
100  
10  
1
TJ = 25 °C  
1
0.5  
1.0  
Forward Voltage Drop - VFM (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
1.5  
2.0  
2.5  
0
100  
200  
300  
400  
500  
600  
ReverseVoltage-VR (V)  
Fig. 3 - Typical Junction Capacitance vs.  
Reverse Voltage  
10  
D = 0.5  
D = 0.2  
D = 0.1  
D = 0.05  
D = 0.02  
D = 0.01  
0.1  
Single Pulse  
(Thermal Resistance)  
0.01  
1E-05  
1E-04  
1E-03  
1E-02  
1E-01  
1E+00  
t1, Rectangular Pulse Duration (s)  
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics  
Revision: 09-Jul-15  
Document Number: 93590  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506S-M3, VS-ETU1506-1-M3  
www.vishay.com  
Vishay Semiconductors  
30  
180  
170  
160  
150  
140  
130  
120  
RMS Limit  
25  
20  
15  
10  
5
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
DC  
DC  
0
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
Average Forward Current - IF(AV) (A)  
AverageForwardCurrent-IF(AV) (A)  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
Fig. 6 - Forward Power Loss Characteristics  
900  
120  
110  
100  
800  
700  
600  
500  
400  
300  
200  
10  
IF = 15 A, 125 °C  
90  
IF = 15 A, 125 °C  
80  
70  
60  
50  
IF = 15 A, 25 °C  
40  
IF = 15 A, 25 °C  
30  
20  
typical value  
typical value  
10  
100  
0
100  
1000  
1000  
dIF/dt (A/μs)  
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt  
dIF/dt (A/μs)  
Fig. 8 - Typical Stored Charge vs. dIF/dt  
Revision: 09-Jul-15  
Document Number: 93590  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506S-M3, VS-ETU1506-1-M3  
www.vishay.com  
Vishay Semiconductors  
VR = 200 V  
0.01 Ω  
L = 70 μH  
D.U.T.  
D
dIF/dt  
adjust  
IRFP250  
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
dI(rec)M/dt  
0.75 IRRM  
dIF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) dIF/dt - rate of change of current  
and IRRM  
through zero crossing  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) dI(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 10 - Reverse Recovery Waveform and Definitions  
Revision: 09-Jul-15  
Document Number: 93590  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETU1506S-M3, VS-ETU1506-1-M3  
www.vishay.com  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS-  
E
T
U
15  
06  
S
TRL -M3  
1
2
3
4
5
6
7
8
9
-
-
Vishay Semiconductors product  
1
Circuit configuration  
E = single diode  
2
-
-
-
-
-
-
-
T = TO-220  
3
4
5
6
7
U = ultrafast recovery time  
Current code (15 = 15 A)  
Voltage code (06 = 600 V)  
• S = D2PAK  
• -1 = TO-262  
• None = tube (50 pieces)  
8
-
-
-
• TRL = tape and reel (left oriented, for D2PAK package)  
• TRR = tape and reel (right oriented, for D2PAK package)  
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free  
9
ORDERING INFORMATION (Example)  
PREFERRED P/N  
QUANTITY PER TUBE  
MINIMUM ORDER QUANTITY  
PACKAGING DESCRIPTION  
Antistatic plastic tube  
Antistatic plastic tube  
13" diameter reel  
VS-ETU1506S-M3  
VS-ETU1506-1-M3  
VS-ETU1506STRR-M3  
VS-ETU1506STRL-M3  
50  
50  
1000  
1000  
800  
800  
800  
800  
13" diameter reel  
LINKS TO RELATED DOCUMENTS  
TO-263AB (D2PAK)  
www.vishay.com/doc?95046  
Dimensions  
TO-262AA  
www.vishay.com/doc?95419  
www.vishay.com/doc?95444  
www.vishay.com/doc?95443  
www.vishay.com/doc?95032  
TO-263AB (D2PAK)  
TO-262AA  
Part marking information  
Packaging information  
TO-263AB (D2PAK)  
Revision: 09-Jul-15  
Document Number: 93590  
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
www.vishay.com  
D2PAK  
DIMENSIONS in millimeters and inches  
Conforms to JEDEC® outline D2PAK (SMD-220)  
B
A
Pad layout  
A
(2)(3)  
E
A
(E)  
c2  
11.00  
MIN.  
(0.43)  
(3)  
D
L1  
4
2
9.65  
MIN.  
(0.38)  
(D1) (3)  
Detail A  
17.90 (0.70)  
15.00 (0.625)  
H
(2)  
1
3
3.81  
MIN.  
L2  
(0.15)  
B
B
2.32  
MIN.  
(0.08)  
A
B
2.64 (0.103)  
2.41 (0.096)  
(3)  
E1  
2 x b2  
2 x b  
C
c
View A - A  
0.004 M  
Base  
Metal  
0.010 M  
M
B
A
Plating  
(4)  
b1, b3  
2 x  
e
H
Gauge  
plane  
(4)  
c1  
(c)  
B
0° to 8°  
Seating  
plane  
L3  
A1  
Lead tip  
(b, b2)  
L
L4  
Section B - B and C - C  
Scale: None  
Detail “A”  
Rotated 90 °CW  
Scale: 8:1  
MILLIMETERS  
INCHES  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
MAX.  
4.83  
0.254  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
MIN.  
6.86  
9.65  
7.90  
MAX.  
8.00  
MIN.  
MAX.  
0.315  
0.420  
0.346  
A
A1  
b
D1  
E
0.270  
0.380  
0.311  
3
2, 3  
3
10.67  
8.80  
E1  
e
b1  
b2  
b3  
c
4
4
4
2
2.54 BSC  
0.100 BSC  
H
14.61  
1.78  
-
15.88  
2.79  
1.65  
1.78  
0.575  
0.070  
-
0.625  
0.110  
0.066  
0.070  
L
L1  
L2  
L3  
L4  
3
c1  
c2  
D
1.27  
0.050  
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
Notes  
(1)  
Dimensioning and tolerancing per ASME Y14.5 M-1994  
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at  
the outmost extremes of the plastic body  
(2)  
(3)  
(4)  
(5)  
(6)  
(7)  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Datum A and B to be determined at datum plane H  
Controlling dimension: inch  
Outline conforms to JEDEC® outline TO-263AB  
Revision: 08-Jul-15  
Document Number: 95046  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
TO-262  
DIMENSIONS in millimeters and inches  
Modified JEDEC outline TO-262  
(2) (3)  
E
A
(Datum A)  
B
A
c2  
E
A
(3)  
L1  
D
Seating  
plane  
D1(3)  
1
2
3
C
C
L2  
B
B
L (2)  
A
c
(3)  
E1  
3 x b2  
3 x b  
A1  
Section A - A  
2 x e  
Base  
metal  
(4)  
b1, b3  
Plating  
c
M
M
B
0.010  
A
Lead assignments  
c1  
(4)  
Diodes  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
(b, b2)  
Lead tip  
Section B - B and C - C  
Scale: None  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
MIN.  
4.06  
2.03  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
6.86  
9.65  
7.90  
MAX.  
4.83  
3.02  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
8.00  
10.67  
8.80  
MIN.  
0.160  
0.080  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
0.270  
0.380  
0.311  
MAX.  
0.190  
0.119  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
0.315  
0.420  
0.346  
A
A1  
b
b1  
b2  
b3  
c
4
4
4
c1  
c2  
D
2
3
D1  
E
2, 3  
3
E1  
e
2.54 BSC  
0.100 BSC  
L
13.46  
-
14.10  
1.65  
3.71  
0.530  
-
0.555  
0.065  
0.146  
L1  
L2  
3
3.56  
0.140  
Notes  
(1)  
(4)  
(5)  
(6)  
Dimensioning and tolerancing as per ASME Y14.5M-1994  
Dimension D and E do not include mold flash. Mold flash shall  
not exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Dimension b1 and c1 apply to base metal only  
Controlling dimension: inches  
Outline conform to JEDEC TO-262 except A1 (maximum), b  
(minimum) and D1 (minimum) where dimensions derived the  
actual package outline  
(2)  
(3)  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Document Number: 95419  
Revision: 04-Oct-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Revision: 13-Jun-16  
Document Number: 91000  
1

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VISHAY

VS-ETU1506STRL-M3

DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
VISHAY

VS-ETU1506STRLHM3

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY

VS-ETU1506STRR-M3

DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
VISHAY

VS-ETU1506STRRHM3

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VISHAY

VS-ETU3006-1-M3

DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY

VS-ETU3006-1HM3

Rectifier Diode,
VISHAY

VS-ETU3006-M3

Ultrafast Rectifier, 30 A FRED Pt
VISHAY

VS-ETU3006FP-M3

Ultrafast Rectifier, 30 A FRED Pt®
VISHAY

VS-ETU3006S-M3

DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
VISHAY