VS-MURB1020CT-1HM3 [VISHAY]

Rectifier Diode, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-262AA,;
VS-MURB1020CT-1HM3
型号: VS-MURB1020CT-1HM3
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-262AA,

超快恢复二极管 快速恢复二极管
文件: 总8页 (文件大小:178K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VS-MURB1020CTHM3, VS-MURB1020CT-1HM3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Rectifier, 2 x 5 A FRED Pt®  
FEATURES  
• Ultrafast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
TO-263AB (D2PAK)  
TO-262AA  
Base  
common  
cathode  
Base  
common  
cathode  
• AEC-Q101 qualified  
• Meets JESD 201 class 1 whisker test  
2
2
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
1
2
3
1
2
3
MUR.. series are the state of the art ultrafast recovery  
rectifiers specifically designed with optimized performance  
of forward voltage drop and ultrafast recovery time.  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Anode Common Anode  
cathode  
Anode Common Anode  
cathode  
1
2
1
2
VS-MURB1020CTHM3  
VS-MURB1020CT-1HM3  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
2 x 5 A  
200 V  
VR  
VF at IF  
0.87  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
trr (typ.)  
TJ max.  
Diode variation  
19 ns  
175 °C  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
VRRM  
200  
V
per leg  
total device  
5
Average rectified forward current  
IF(AV)  
Rated VR, TC = 149 °C  
Rated VR, square wave, 20 kHz, TC = 149 °C  
10  
50  
A
Non-repetitive peak surge current per leg  
Peak repetitive forward current per leg  
Operating junction and storage temperatures  
IFSM  
IFM  
10  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX. UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
200  
-
-
IF = 5 A, TJ = 25 °C  
-
-
-
-
-
-
-
-
0.99  
0.87  
1.12  
1.02  
-
1.08  
V
IF = 5 A, TJ = 125 °C  
0.99  
Forward voltage  
VF  
IF = 10 A, TJ = 25 °C  
1.25  
1.20  
IF = 10 A, TJ = 125 °C  
VR = VR rated  
10  
μA  
Reverse leakage current  
IR  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
250  
Junction capacitance  
Series inductance  
CT  
LS  
8
-
-
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
Revision: 02-Feb-16  
Document Number: 95807  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-MURB1020CTHM3, VS-MURB1020CT-1HM3  
www.vishay.com  
Vishay Semiconductors  
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-
-
-
-
19  
-
-
-
-
-
-
-
Reverse recovery time  
trr  
24  
ns  
TJ = 125 °C  
35  
IF = 5 A  
dIF/dt = 200 A/μs  
TJ = 25 °C  
3.3  
5.0  
33  
Peak recovery current  
IRRM  
A
TJ = 125 °C  
V
R = 160 V  
TJ = 25 °C  
Reverse recovery charge  
Qrr  
nC  
TJ = 125 °C  
76  
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and storage   
temperature range  
TJ, TStg  
-65  
-
175  
°C  
Thermal resistance,   
junction to case per leg  
RthJC  
RthJA  
RthCS  
-
-
-
-
-
5
50  
-
Thermal resistance,   
junction to ambient per leg  
°C/W  
Thermal resistance,  
case to heatsink  
Mounting surface, flat, smooth and greased  
0.5  
-
-
2.0  
-
-
g
Weight  
0.07  
oz.  
6.0  
(5.0)  
12  
(10)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
-
Case style TO-263AB (D2PAK)  
Case style TO-262AA  
MURB1020CTH  
MURB1020CT-1H  
100  
10  
1
100  
TJ = 175 °C  
10  
TJ = 150 °C  
1
TJ = 125 °C  
TJ = 175 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 100 °C  
0.1  
0.01  
0.001  
0.0001  
TJ = 25 °C  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
40  
80  
120  
160  
200  
VF - Forward Voltage Drop (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
VR - Reverse Voltage (V)  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
Revision: 02-Feb-16  
Document Number: 95807  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-MURB1020CTHM3, VS-MURB1020CT-1HM3  
www.vishay.com  
Vishay Semiconductors  
100  
TJ = 25 °C  
10  
1
1
10  
100  
1000  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
1
D = 0.50  
D = 0.20  
D = 0.10  
D = 0.05  
D = 0.02  
PDM  
t1  
t2  
0.1  
Single pulse  
(thermal resistance)  
D = 0.01  
Notes:  
1. Duty factor D = t1/t2  
2. Peak TJ = PDM x ZthJC + TC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
180  
170  
160  
150  
140  
130  
7
6
5
4
3
2
1
0
DC  
RMS limit  
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.10  
D = 0.20  
D = 0.50  
DC  
Square wave (D = 0.50)  
Rated VR applied  
See note (1)  
0
2
4
6
8
0
1
2
3
4
5
6
7
8
IF(AV) - Average Forward Current (A)  
IF(AV) - Average Forward Current (A)  
Fig. 6 - Forward Power Loss Characteristics  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
Revision: 02-Feb-16  
Document Number: 95807  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-MURB1020CTHM3, VS-MURB1020CT-1HM3  
www.vishay.com  
Vishay Semiconductors  
50  
40  
30  
20  
10  
160  
IF = 10 A  
IF = 5 A  
140  
120  
100  
80  
IF = 10 A  
IF = 5 A  
60  
40  
VR = 160 V  
TJ = 125 °C  
TJ = 25 °C  
VR = 160 V  
TJ = 125 °C  
TJ = 25 °C  
20  
0
100  
1000  
100  
1000  
dIF/dt (A/μs)  
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt  
dIF/dt (A/μs)  
Fig. 8 - Typical Stored Charge vs. dIF/dt  
Note  
(1)  
Formula used: TC = TJ - (Pd + PdREV) x RthJC;  
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
dI(rec)M/dt  
0.75 IRRM  
dIF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) dIF/dt - rate of change of current  
and IRRM  
through zero crossing  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) dI(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 9 - Reverse Recovery Waveform and Definitions  
Revision: 02-Feb-16  
Document Number: 95807  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-MURB1020CTHM3, VS-MURB1020CT-1HM3  
www.vishay.com  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS- MUR  
B
10  
20  
CT  
-1  
L
H
M3  
1
2
3
4
5
6
7
8
9
10  
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product  
Ultrafast MUR series  
B = D2PAK/TO-262  
Current rating (10 = 10 A)  
Voltage rating (20 = 200 V)  
CT = center tap (dual)  
None = D2PAK  
-1 = TO-262  
-
8
None = tube (50 pieces)  
L = tape and reel (left oriented, for D2PAK package)  
R = tape and reel (right oriented, for D2PAK package)  
H = AEC-Q101 qualified  
-
-
9
Environmental digit:  
10  
M3 = halogen-free, RoHS-compliant, and terminations lead(Pb)-free  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
QUANTITY PER T/R  
MINIMUM ORDER QUANTITY  
PACKAGING DESCRIPTION  
Antistatic plastic tube  
Antistatic plastic tube  
13" diameter reel  
VS-MURB1020CTHM3  
VS-MURB1020CT-1HM3  
VS-MURB1020CTLHM3  
VS-MURB1020CTRHM3  
50  
50  
1000  
1000  
800  
800  
800  
800  
13" diameter reel  
LINKS TO RELATED DOCUMENTS  
TO-263AB (D2PAK)  
www.vishay.com/doc?95046  
Dimensions  
TO-262AA  
www.vishay.com/doc?95419  
www.vishay.com/doc?95444  
www.vishay.com/doc?95443  
www.vishay.com/doc?95032  
TO-263AB (D2PAK)  
TO-262AA  
Part marking information  
Packaging information  
TO-263AB (D2PAK)  
Revision: 02-Feb-16  
Document Number: 95807  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
www.vishay.com  
D2PAK  
DIMENSIONS in millimeters and inches  
Conforms to JEDEC® outline D2PAK (SMD-220)  
B
A
Pad layout  
A
(2)(3)  
E
A
(E)  
c2  
11.00  
MIN.  
(0.43)  
(3)  
D
L1  
4
2
9.65  
MIN.  
(0.38)  
(D1) (3)  
Detail A  
17.90 (0.70)  
15.00 (0.625)  
H
(2)  
1
3
3.81  
MIN.  
L2  
(0.15)  
B
B
2.32  
MIN.  
(0.08)  
A
B
2.64 (0.103)  
2.41 (0.096)  
(3)  
E1  
2 x b2  
2 x b  
C
c
View A - A  
0.004 M  
Base  
Metal  
0.010 M  
M
B
A
Plating  
(4)  
b1, b3  
2 x  
e
H
Gauge  
plane  
(4)  
c1  
(c)  
B
0° to 8°  
Seating  
plane  
L3  
A1  
Lead tip  
(b, b2)  
L
L4  
Section B - B and C - C  
Scale: None  
Detail “A”  
Rotated 90 °CW  
Scale: 8:1  
MILLIMETERS  
INCHES  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
SYMBOL  
NOTES  
MIN.  
4.06  
0.00  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
MAX.  
4.83  
0.254  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
MIN.  
0.160  
0.000  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
MAX.  
0.190  
0.010  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
MIN.  
6.86  
9.65  
7.90  
MAX.  
8.00  
MIN.  
MAX.  
0.315  
0.420  
0.346  
A
A1  
b
D1  
E
0.270  
0.380  
0.311  
3
2, 3  
3
10.67  
8.80  
E1  
e
b1  
b2  
b3  
c
4
4
4
2
2.54 BSC  
0.100 BSC  
H
14.61  
1.78  
-
15.88  
2.79  
1.65  
1.78  
0.575  
0.070  
-
0.625  
0.110  
0.066  
0.070  
L
L1  
L2  
L3  
L4  
3
c1  
c2  
D
1.27  
0.050  
0.25 BSC  
0.010 BSC  
4.78  
5.28  
0.188  
0.208  
Notes  
(1)  
Dimensioning and tolerancing per ASME Y14.5 M-1994  
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at  
the outmost extremes of the plastic body  
(2)  
(3)  
(4)  
(5)  
(6)  
(7)  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Dimension b1 and c1 apply to base metal only  
Datum A and B to be determined at datum plane H  
Controlling dimension: inch  
Outline conforms to JEDEC® outline TO-263AB  
Revision: 08-Jul-15  
Document Number: 95046  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
TO-262  
DIMENSIONS in millimeters and inches  
Modified JEDEC outline TO-262  
(2) (3)  
E
A
(Datum A)  
B
A
c2  
E
A
(3)  
L1  
D
Seating  
plane  
D1(3)  
1
2
3
C
C
L2  
B
B
L (2)  
A
c
(3)  
E1  
3 x b2  
3 x b  
A1  
Section A - A  
2 x e  
Base  
metal  
(4)  
b1, b3  
Plating  
c
M
M
B
0.010  
A
Lead assignments  
c1  
(4)  
Diodes  
1. - Anode (two die)/open (one die)  
2., 4. - Cathode  
3. - Anode  
(b, b2)  
Lead tip  
Section B - B and C - C  
Scale: None  
MILLIMETERS  
INCHES  
SYMBOL  
NOTES  
MIN.  
4.06  
2.03  
0.51  
0.51  
1.14  
1.14  
0.38  
0.38  
1.14  
8.51  
6.86  
9.65  
7.90  
MAX.  
4.83  
3.02  
0.99  
0.89  
1.78  
1.73  
0.74  
0.58  
1.65  
9.65  
8.00  
10.67  
8.80  
MIN.  
0.160  
0.080  
0.020  
0.020  
0.045  
0.045  
0.015  
0.015  
0.045  
0.335  
0.270  
0.380  
0.311  
MAX.  
0.190  
0.119  
0.039  
0.035  
0.070  
0.068  
0.029  
0.023  
0.065  
0.380  
0.315  
0.420  
0.346  
A
A1  
b
b1  
b2  
b3  
c
4
4
4
c1  
c2  
D
2
3
D1  
E
2, 3  
3
E1  
e
2.54 BSC  
0.100 BSC  
L
13.46  
-
14.10  
1.65  
3.71  
0.530  
-
0.555  
0.065  
0.146  
L1  
L2  
3
3.56  
0.140  
Notes  
(1)  
(4)  
(5)  
(6)  
Dimensioning and tolerancing as per ASME Y14.5M-1994  
Dimension D and E do not include mold flash. Mold flash shall  
not exceed 0.127 mm (0.005") per side. These dimensions are  
measured at the outmost extremes of the plastic body  
Dimension b1 and c1 apply to base metal only  
Controlling dimension: inches  
Outline conform to JEDEC TO-262 except A1 (maximum), b  
(minimum) and D1 (minimum) where dimensions derived the  
actual package outline  
(2)  
(3)  
Thermal pad contour optional within dimension E, L1, D1 and E1  
Document Number: 95419  
Revision: 04-Oct-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference  
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21  
conform to JEDEC JS709A standards.  
Revision: 02-Oct-12  
Document Number: 91000  
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