ACT108-600D [WEEN]
Exclusive negative gate triggering;
| 型号： | ACT108-600D |
| 厂家： | 
WeEn Semiconductors |
| 描述： | Exclusive negative gate triggering 三端双向交流开关 |
| 文件： | 总12页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACT108-600D
AC Thyristor power switch
22 September 2016
Product data sheet
1. General description
AC Thyristor power switch in a SOT54 plastic package with self-protective capabilities against low
and high energy transients
2. Features and benefits
•
Exclusive negative gate triggering
•
•
•
•
•
•
Full cycle AC conduction
High noise immunity
Remote gate separates the gate driver from the effects of the load current
Very sensitive gate for lowest gate trigger current
Safe clamping of low energy over-voltage transients
Self-protective turn-on during high energy voltage transients
3. Applications
•
•
•
Fan motor circuits
Pump motor circuits
Lower-power highly inductive, resistive and safety loads
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDRM
repetitive peak off-
state voltage
-
-
600
V
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 71 °C; Fig. 1
-
-
0.8
A
Static characteristics
IGT gate trigger current
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 6
0.5
0.5
-
-
5
5
mA
mA
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 6
WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
CM
G
common
gate
LD
2
G
3
LD
load
CM
001aaj924
3 2 1
TO-92 (SOT54)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
ACT108-600D
TO-92
TO-92
plastic single-ended leaded (through hole) package; 3 leads
plastic single-ended leaded (through hole) package; 3 leads
SOT54
SOT54
ACT108-600D/DG
©
ACT108-600D
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
2 / 12
WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state
voltage
-
600
V
IT(RMS)
ITSM
RMS on-state current
full sine wave; Tlead ≤ 71 °C; Fig. 1
-
-
-
0.8
8.8
8
A
A
A
non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 2; Fig. 3
I2t
I2t for fusing
tp = 10 ms; SIN
IG = 10 mA
-
-
0.32
50
A²s
dIT/dt
rate of rise of on-state
current
A/µs
IGM
peak gate current
peak gate voltage
average gate power
storage temperature
junction temperature
peak pulse voltage
t = 20 μs
-
1
A
VGM
PG(AV)
Tstg
Tj
-
15
0.1
150
125
2
V
over any 20 ms period
-
W
°C
°C
kV
-40
-
-
VPP
Tj = 25 °C; non-repetitive, off-state; Fig. 4
003aac803
1.0
P
tot
(W)
α = 180°
α
0.8
α
0.6
0.4
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I
(A)
T(RMS)
α = conduction angle
Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values
©
ACT108-600D
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
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WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
003aac804
10
I
TSM
(A)
8
6
4
2
0
I
I
TSM
t
T
1/f
= 25 °C max
T
j(init)
2
3
1
10
10
10
number of cycles
f = 50 Hz
Fig. 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aac805
103
I
I
TSM
t
T
ITSM
(A)
t
p
102
T
= 25 °C max
j(init)
10
1
10- 5
10- 4
10- 3
10- 2
tp (s)
tp ≤ 20 ms
Fig. 3. Non-repetitive peak on-state current as a function of pulse width; maximum values
IEC 61000-4-5 Standards
Surge Generator
Open Circuit Voltage
1.2 µs/50 µs waveform
R
Gen
R
L
5 µH
2 Ω
150 Ω
R
G
DUT
Load Model
Surge pulse
220 Ω
003aad077
Fig. 4. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5
©
ACT108-600D
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
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WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-lead)
thermal resistance
from junction to lead
full cycle with heatsink compound;
Fig. 5
-
-
60
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
full cycle; printed-circuit board
mounted; lead length 4 mm
-
150
-
K/W
003aad294
2
10
Z
th(j-lead)
(K/W)
10
1
P
- 1
10
t
t
p
- 2
10
- 5
- 4
- 3
- 2
- 1
10
10
10
10
1
10
10
t
(s)
p
Fig. 5. Transient thermal impedance from junction to lead as a function of pulse width
©
ACT108-600D
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WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
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WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
9. Characteristics
Table 6. Characteristics
Symbol
Static characteristics
IGT gate trigger current
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 6
0.5
0.5
-
-
-
-
-
5
mA
mA
mA
mA
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 6
5
IL
latching current
VD = 12 V; IG = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 7
25
25
VD = 12 V; IG = 100 mA; LD- G-;
Tj = 25 °C; Fig. 7
-
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 8
IT = 1.1 A; Tj = 25 °C; Fig. 9
VD = 400 V; IT = 100 mA; Tj = 125 °C
VD = 12 V; IT = 100 mA; Tj = 25 °C
VD = 600 V; Tj = 25 °C
-
-
-
-
-
-
-
-
20
1.3
-
mA
V
VT
VGT
on-state voltage
gate trigger voltage
-
0.15
V
-
0.9
2
V
ID
off-state current
clamping voltage
-
µA
mA
V
VD = 600 V; Tj = 125 °C
-
0.2
-
VCL
ICL = 0.1 mA; tp = 1 ms; Tj ≤ 125 °C
650
Dynamic charateristics
dVD/dt
rate of rise of off-state VDM = 402 V; Tj = 125 °C; (VDM = 67%
300
-
-
-
-
V/µs
voltage
of VDRM); exponential waveform; gate
open circuit; Fig. 10
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A;
dVcom/dt = 15 V/µs; gate open circuit;
Fig. 11; Fig. 12
0.15
A/ms
003aac809
003aac811
3
3
I
GT
(1)
(2)
I
L
I
GT(25°C)
I
L(25°C)
2
2
1
1
(2)
(1)
0
- 50
0
- 50
50
0
150
100
0
50
100
150
T (°C)
j
T (°C)
j
(1) LD+ G-
(2) LD- G-
Fig. 7. Normalized latching current as a function of
junction temperature
Fig. 6. Normalized gate trigger current as a function of
junction temperature
©
ACT108-600D
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
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WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
003aac810
003aaf722
3
2.0
I
T
I
(A)
H
I
H(25°C)
1.5
2
1.0
0.5
0.0
(1)
(2)
(3)
1
0
- 50
0.0
0.5
1.0
1.5
2.0
0
50
100
150
V
(V)
T
T (°C)
j
Vo = 0.758 V; Rs = 0.263 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 8. Normalized holding current as a function of
junction temperature
Fig. 9. On-state current as a function of on-state voltage
003aac813
003aac814
12
12
A
B
A
B
10
8
6
8
4
0
4
2
0
25
50
75
100
125
25
50
75
100
125
T (°C)
j
T (°C)
j
A = dVD/dt at condition Tj °C
B = dVD/dt at condition Tj [125] °C
A = dIcom/dt at condition Tj °C
B = dIcom/dt at condition Tj [125] °C
VD = 400 V
Fig. 10. Normalized rate of rise of off-state voltage as a
function of junction temperature
Fig. 11. Normalized critical rate of rise of commutating
current as a function of junction temperature
©
ACT108-600D
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
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WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
003aac815
2.0
A [B]
A [spec]
1.5
1.0
0.5
0
- 1
2
10
1
10
10
B (V/µs)
A [B] = dIcom/dt at condition B, dVcom/dt
A [spec] is the data sheet value for dIcom/dt
turn-off time is less than 20 ms
Fig. 12. Normalized critical rate of change of commutating current as a function of critical rate of change of
commutating voltage; minimum values
©
ACT108-600D
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
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WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
10. Package outline
Fig. 13. Package outline TO-92 (SOT54)
©
ACT108-600D
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
9 / 12
WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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11. Legal information
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Data sheet status
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications — Applications that are described herein for any of these
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no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1] Please consult the most recently issued document before initiating or
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Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
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customer’s applications and products planned, as well as for the planned
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[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
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Definitions
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
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customer (a) shall use the product without WeEn Semiconductors’ warranty
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accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
©
ACT108-600D
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
10 / 12
WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
ACT108-600D
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
11 / 12
WeEn Semiconductors
ACT108-600D
AC Thyristor power switch
12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 5
9. Characteristics..............................................................6
10. Package outline.......................................................... 9
11. Legal information..................................................... 10
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 22 September 2016
©
ACT108-600D
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
12 / 12
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