WSD500H [WEITRON]
Surface Monut Schottky Barrier Diode; 表面Monut肖特基二极管
| 型号： | WSD500H |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Monut Schottky Barrier Diode |
| 文件： | 总3页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WSD500H
Surface Monut Schottky Barrier Diode
SCHOTTKY BARRIER
RECTIFIERS
P b
Lead(Pb)-Free
100m AMPERES
40 VOLTS
Features:
*Extremely Low V
F
*Very Small Conduction Losses.
*Schottky Barrier Diodes Encapsulated in SOD-323 Package.
1
2
SOD-323
SOD-323 Outline Demensions
Unit:mm
MILLMETERS
Dim Min
Max
1.60
1.80
A
B
C
D
E
H
J
1.15
0.80
0.25
1.35
1.00
0.40
0.15 REF
0.00
0.089
2.30
0.10
0.377
2.70
K
PIN 1.CATHODE
2.ANODE
WEITRON
http://www.weitron.com.tw
1/3
05-Oct-05
WSD500H
MAXIMUM RATING
Characteristics
Symbol
WSD 500H
Unit
Volts
Reverse Breakdown Voltage
40
V
I
R
Average Rectified Forward Current
100
mAmps
O
Peak Forward Surge Current
(8.3ms 1/2 Sine Wave)
I
1.0
Amps
C
FSM
T
-40 to+125
Storage Temperature
stg
ELECTRICAL CHARACTERISTICS (Ta=25 C)
MAX
Characteristics
Symbol
Unit
Volts
Volts
MIN
Reverse Breakdown Voltage
40
V
(BR)R
I
=100uA
R
Maximum Instantneous Forward Voltage
IF=10mA
V
F
0.45
Maximum Instantneous Reverse Current
I
1.0
20
uAmps
R
(V =10V)
R
Typical Junction Capacitance
(V =10V, f=1MHz)
R
F
P
C
J
Device Marking
Item
Marking
JV
WSD500H
WEITRON
http://www.weitron.com.tw
2/3
05-Oct-05
WSD500H
Electrical Characteristics Curves (Ta=25 C unless specified otherwise)
1000
10m
1m
100
100µ
10µ
1µ
10
1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
FORWARD VOLTAGE:V (V)
F
REVERSE VOLTAGE:V (V)
R
FIG: 1 Forward Characteristics
FIG.2 Reverse Characteristics
100
10
1
100
80
60
40
20
0
0
25
50
75
100
125
0
5
10
15 20
25
30
35
AMBIENT TEMPERATURE : Ta ( C)
REVERSE VOLTASGE : V (V)
R
FIG.3 Capacitance Between
Terminals Characteristics
FIG.4 Derating Curve
(mounting on glass epoxy PCBs)
WEITRON
http://www.weitron.com.tw
3/3
05-Oct-05
相关型号：
WSD520BS
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
WEITRON
©2020 ICPDF网 联系我们和版权申明