FMMT620_06 [ZETEX]
SuperSOT⑩ 80V NPN SILICON LOW SATURATION TRANSISTOR; SuperSOT ™ 80V NPN硅低饱和晶体管
| 型号： | FMMT620_06 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | SuperSOT⑩ 80V NPN SILICON LOW SATURATION TRANSISTOR |
| 文件： | 总6页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMMT620
SuperSOT™
80V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY
VCEO=80V; RSAT = 90m ; IC= 1.5A
DESCRIPTION
Enhancing the existing SuperSOT range this 80V NPN transistor utilises the
Zetex matrix structure combined with advanced assembly techniques. Users
are provided with high Hfe and very low sat performance ensuring low on
state losses.
SOT23
FEATURES
•
•
•
•
•
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
hFE characterised up to 3.0A
IC=1.5A Continuous Collector Current
SOT23 package
APPLICATIONS
•
•
•
•
DC - DC Modules
Power Management Functions
CCFL Backlighting Inverters
Motor control and drive functions
E
C
B
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
Top View
FMMT620TA
FMMT620TC
7
8mm embossed
8mm embossed
3000 units
10000 units
13
DEVICE MARKING
620
ISSUE 2 - JUNE 2006
1
SEMICONDUCTORS
FMMT620
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
80
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
V
V
V
CBO
CEO
EBO
80
V
5
V
I
I
I
5
A
CM
Continuous Collector Current
Base Current
1.5
500
A
C
B
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
625
5
mW
mW/°C
D
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
806
6.4
mW
mW/°C
D
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
R
R
200
155
°C/W
°C/W
θJA
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
ISSUE 2 - JUNE 2006
2
SEMICONDUCTORS
FMMT620
TYPICAL CHARACTERISTICS
10
1
0.7
0.6
0.5
0.4
0.3
0.2
DC
1s
100ms
100m
10ms
1ms
100µs
10
0.1
0.0
Single Pulse Tamb=25°C
10m
100m
1
100
0
20
40
60
80
100 120 140 160
VCE Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
200
150
100
50
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
1
0
100µ 1m
10m 100m
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 2 - JUNE 2006
3
SEMICONDUCTORS
FMMT620
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
V
V
100
180
V
I =100A
C
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown
Voltage
80
7
110
8
V
I =10mA*
C
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V
I =100A
E
(BR)EBO
CBO
I
I
I
100
100
100
nA
nA
nA
V
V
V
=80V
CB
Emitter Cut-Off Current
=5.5V
EBO
EB
Collector Emitter Cut-Off Current
=80V
CES
CES
Collector-Emitter Saturation
Voltage
V
15
45
145
160
20
60
185
200
mV
mV
mV
mV
I =0.1A, I =10mA*
C B
CE(sat)
I =0.5A, I =50mA*
C
B
I =1A, I =20mA*
C B
I =1.5A, I =50mA*
C
B
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
0.86
0.82
1.0
V
V
I =1.5A, I =50mA*
C B
BE(sat)
BE(on)
FE
0.95
I =1.5A, V =2V*
C CE
Static Forward Current Transfer
Ratio
200
300
110
60
450
450
170
90
30
10
I =10mA, V =2V*
C CE
900
I =200mA, V =2V*
C CE
I =1A, V =2V*
C
CE
I =1.5A, V =2V*
C
CE
20
I =3A, V =2V*
C CE
I =5A, V =2V*
C CE
Transition Frequency
f
100
160
MHz
I =50mA, V =10V
T
C
CE
f=100MHz
Output Capacitance
Turn-On Time
C
11.5
86
18
pF
ns
ns
V
=10V, f=1MHz
CB
obo
(on)
(off)
t
t
V
=10V, I =500mA
CC C
=I =25mA
I
B1 B2
Turn-Off Time
1128
*Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
ISSUE 2 - JUNE 2006
4
SEMICONDUCTORS
FMMT620
TYPICAL CHARACTERISTICS
ISSUE 2 - JUNE 2006
5
SEMICONDUCTORS
FMMT620
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
PACKAGE DIMENSIONS
Millimeters
DIM
Inches
Min
Millimeters
Inches
DIM
Min
2.67
1.20
ᎏ
Max
3.05
1.40
1.10
0.53
0.15
Max
0.120
0.055
0.043
0.021
Min
0.33
0.01
2.10
0.45
Max
0.51
0.10
2.50
0.64
Max
0.013
0.0004
0.083
0.018
Max
0.020
0.004
0.0985
0.025
A
B
C
D
F
0.105
0.047
ᎏ
H
K
L
0.37
0.085
0.015
M
N
ᎏ
0.0034 0.0059
0.075 NOM
0.95 NOM
0.0375 NOM
G
1.90 NOM
ᎏ
ᎏ
© Zetex Semiconductors plc 2006
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ISSUE 2 - JUNE 2006
6
SEMICONDUCTORS
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