ZXTP2014GTC [ZETEX]

140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223; 140V PNP中功率低饱和晶体管采用SOT223
ZXTP2014GTC
型号: ZXTP2014GTC
厂家: ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述:

140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
140V PNP中功率低饱和晶体管采用SOT223

晶体 晶体管 功率双极晶体管 开关 光电二极管
文件: 总6页 (文件大小:111K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ZXTP2014G  
140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR  
IN SOT223  
SUMMARY  
BVCEO = -140V : RSAT = 92m ; IC = -4A  
DESCRIPTION  
Packaged in the SOT223 outline this new low saturation 140V PNP transistor  
offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits  
and various driving and power m anagem ent functions.  
FEATURES  
SOT223  
4 am ps continuous current  
Up to 10 am ps peak current  
Very low saturation voltages  
APPLICATIONS  
Motor driving  
Line switching  
High side switches  
Subscriber line interface cards (SLIC)  
ORDERING INFORMATION  
PINOUT  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZXTP2014GTA  
ZXTP2014GTC  
7”  
12m m  
em bossed  
1,000 units  
4,000 units  
13"  
DEVICE MARKING  
ZXTP  
2014  
TOP VIEW  
ISSUE 1 - J UNE 2005  
1
ZXTP2014G  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
S YMBOL  
LIMIT  
-180  
-140  
-7  
UNIT  
Co lle cto r-b a s e vo lta g e  
Co lle cto r-e m itte r vo lta g e  
Em itte r-b a s e vo lta g e  
BV  
BV  
BV  
V
CBO  
CEO  
EBO  
V
V
A
(a )  
Co n tin u o u s co lle cto r cu rre n t  
I
-4  
C
Pe a k p u ls e cu rre n t  
(a )  
I
-10  
A
CM  
Po w e r d is s ip a tio n a t T =25°C  
A
P
3.0  
W
D
Lin e a r d e ra tin g fa cto r  
24  
m W/°C  
W
(b )  
Po w e r d is s ip a tio n a t T =25°C  
A
P
1.6  
D
Lin e a r d e ra tin g fa cto r  
12.8  
-55 to 150  
m W/°C  
°C  
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e  
T , T  
j s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
42  
UNIT  
°C/W  
°C/W  
(a )  
J u n ctio n to a m b ie n t  
R
R
J A  
J A  
(b )  
J u n ctio n to a m b ie n t  
78  
NOTES  
(a) For a device surface m ounted on 52m m x 52m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.  
(b) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
ISSUE 1 - J UNE 2005  
2
ZXTP2014G  
CHARACTERISTICS  
ISSUE 1 - J UNE 2005  
3
ZXTP2014G  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
am b  
PARAMETER  
S YMBOL  
MIN.  
-180  
-180  
-140  
-7.0  
TYP. MAX. UNIT CONDITIONS  
Co lle cto r-b a s e b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Em itte r-b a s e b re a kd o w n vo lta g e  
Co lle cto r cu t-o ff cu rre n t  
BV  
BV  
BV  
BV  
-200  
-200  
-160  
-8.0  
Ͻ1  
V
V
I =-100A  
C
CBO  
CER  
CEO  
EBO  
I =-1A, RBՅ1k⍀  
C
V
I =-10m A*  
C
V
I =-100A  
E
I
-20  
-0.5  
-20  
n A  
A  
n A  
A  
n A  
V =-150V  
CB  
CBO  
V
=-150V, T  
=100ЊC  
=100ЊC  
CB  
amb  
Co lle cto r cu t-o ff cu rre n t  
I
Ͻ1  
V =-150V  
CB  
CER  
RՅ1k⍀  
-0.5  
-10  
V =-150V, T  
CB  
amb  
Em itte r cu t-o ff cu rre n t  
I
Ͻ1  
-40  
-55  
V
=-6V  
EBO  
EB  
Co lle cto r-e m itte r s a tu ra tio n vo lta g e  
V
-60  
m V I =-0.1A, I =-5m A*  
C B  
CE(S AT)  
-80  
m V I =-0.5A, I =-50m A*  
C B  
-85  
-120  
-360  
m V I =-1A, I =-100m A*  
C B  
-275  
m V I =-3A, I =-300m A*  
C B  
Ba s e -e m itte r s a tu ra tio n vo lta g e  
Ba s e -e m itte r tu rn -o n vo lta g e  
V
V
H
-940 -1040 m V I =-3A, I =-300m A*  
C B  
BE(S AT)  
BE(ON)  
FE  
-830  
225  
200  
100  
5
-930  
m V I =-3A, V =-5V*  
C CE  
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio  
100  
100  
45  
I =-10m A, V =-5V*  
C CE  
300  
I =-1A, V =-5V*  
C
CE  
I =-3A, V =-5V*  
C
CE  
I =-10A, V =-5V*  
C
CE  
Tra n s itio n fre q u e n cy  
f
120  
MHz I =-100m A, V =-10V  
T
C
CE  
f=50MHz  
Ou tp u t ca p a cita n ce  
S w itch in g tim e s  
C
33  
42  
p F  
n s  
V
=-10V, f=1MHz*  
OBO  
CB  
t
t
I =-1A, V =-50V,  
ON  
OFF  
C
CC  
636  
I
= -I =-100m A  
B2  
B1  
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.  
ISSUE 1 - J UNE 2005  
4
ZXTP2014G  
TYPICAL CHARACTERISTICS  
ISSUE 1 - J UNE 2005  
5
ZXTP2014G  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches  
PACKAGE DIMENSIONS  
Millim eters  
Inches  
Millim eters  
Min Max  
2.30 BSC  
4.60 BSC  
Inches  
Min Max  
DIM  
DIM  
Min  
-
Max  
Min  
Max  
0.071  
0.004  
0.033  
0.122  
0.013  
0.264  
A
A1  
b
1.80  
0.10  
0.84  
3.10  
0.33  
6.70  
-
e
e1  
E
0.0905 BSC  
0.181 BSC  
0.02  
0.66  
2.90  
0.23  
6.30  
0.0008  
0.026  
0.114  
0.009  
0.248  
6.70  
7.30  
0.264  
0.287  
b2  
C
E1  
L
3.30  
0.90  
-
3.70  
0.130  
0.355  
-
0.146  
-
-
-
-
D
-
© Zetex Sem iconductors plc 2005  
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Am ericas  
Asia Pacific  
Corporate Headquarters  
Zetex Gm bH  
Zetex Inc  
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Telephone (44) 161 622 4444  
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These offices are supported by agents and distributors in m ajor countries world-wide.  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to www.zetex.com  
ISSUE 1 - J UNE 2005  
6

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