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MTB3D6N04RV8

更新时间：2025-07-04 11:17:29

品牌：CYSTEKEC

描述：Parts Number : MTB3D6N04RV8; Package : DFN3×3; Channel : Single N; BVDSS(V) : 40; ID(A) : 26; Vgs(±V) : 20; VGS(th) max(V) : 2.5; RDS(ON) @ 10V(mΩ) : 4.4(3.4); RDS(ON) @ 4.5V(mΩ) : 7(5); Ciss typ.(pF) : 1540; Crss typ.(pF) : 75; Qg typ (nC) : 27; Qgd typ.(nC) : 5.3;

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MTB3D6N04RV8 概述

Parts Number : MTB3D6N04RV8; Package : DFN3×3; Channel : Single N; BVDSS(V) : 40; ID(A) : 26; Vgs(±V) : 20; VGS(th) max(V) : 2.5; RDS(ON) @ 10V(mΩ) : 4.4(3.4); RDS(ON) @ 4.5V(mΩ) : 7(5); Ciss typ.(pF) : 1540; Crss typ.(pF) : 75; Qg typ (nC) : 27; Qgd typ.(nC) : 5.3;

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Spec. No. : C683V8

Issued Date : 2020.06.23

Revised Date : 2022.10.12

Page No. : 1/9

CYStek Electronics Corp.

N-Channel Enhancement Mode Power MOSFET

MTB3D6N04RV8

Features

BVDSS

40V

• Low Gate Charge

ID@VGS=10V, TC=25°C

26A

• Fast Switching Characteristic

ID@VGS=10V, TA=25°C

13A

3.4mΩ

5mΩ

RDS(ON) typ.@VGS=10V, ID=15A

RDS(ON) typ.@VGS=4.5V, ID=10A

Equivalent Circuit

Outline

DFN3×3

MTB3D6N04RV8

Ordering Information

Device

Package

DFN3×3

(Pb-free lead plating and halogen-free package)

Shipping

MTB3D6N04RV8-0-T6-G

3000 pcs / Tape & Reel

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTB3D6N04RV8

CYStek Product Specification

Spec. No. : C683V8

Issued Date : 2020.06.23

Revised Date : 2022.10.12

Page No. : 2/9

CYStek Electronics Corp.

Absolute Maximum Ratings (TA=25C)

Parameter

Symbol

VDS

Limits

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

VGS

Continuous Drain Current @ VGS=10V, TC=25C (silicon limit)

Continuous Drain Current @ VGS=10V, TC=25C (package limit)

Continuous Drain Current @ VGS=10V, TC=100C

Continuous Drain Current @ VGS=10V, TA=25C

Continuous Drain Current @ VGS=10V, TA=70C

Pulsed Drain Current

IDM

104

Continuous Body Diode Forward Current @ TC=25C

Pulsed Body Diode Forward Current @ TC=25C

Avalanche Current @ L=0.1mH

ISM

IAS

EAS

104

Avalanche Energy @ L=0.5mH

TC=25C

9.6

TC=100C

Total Power Dissipation

TA=25C

2.7

1.1

TA=70C

Operating Junction and Storage Temperature Range

TJ, Tstg

-55~+150

C

Thermal Data

Parameter

Symbol Steady State Unit

5.2

RθJC

RθJA

Thermal Resistance, Junction-to-case

Thermal Resistance, Junction-to-ambient

C/W

Note:

*a. The power dissipation P_Dis based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in

setting the upper dissipation limit for cases where additional heatsinking is used.

*b. The value of R_θJAis measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment

with T_A=25°C. The power dissipation P_Dis based on R_θJAand the maximum allowed junction temperature of 150°C. The

value in any given application depends on the user’s specific board design.

*c. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and

low duty cycles to keep initial T_J=25°C.

MTB3D6N04RV8

CYStek Product Specification

Spec. No. : C683V8

Issued Date : 2020.06.23

Revised Date : 2022.10.12

Page No. : 3/9

CYStek Electronics Corp.

Electrical Characteristics (TA=25C, unless otherwise specified)

Symbol

Static

Min.

Typ.

Max.

Unit

Test Conditions

BV_DSS

V_GS(th)

G_FS

2.5

V_GS=0V, I_D=250μA

V_DS=V_GS, I_D=250μA

V_DS=5V, I_D=10A

100

V_GS= 20V, V_DS=0V

I_GSS

μA

I_DSS

V_DS=32V, V_GS=0V

V_GS=10V, I_D=15A

V_GS=4.5V, I_D=10A

3.4

4.4

R_DS(ON)

Dynamic

Ciss

1540

935

Coss

Crss

V_DS=20V, V_GS=0V, f=1MHz

f=1MHz

*1, 2

VDS=20V, ID=15A, VGS=4.5V

*1, 2

Qgs

Qgd

4.7

5.3

13.5

VDS=20V, ID=15A, VGS=10V

t_{d(ON) *1, 2}

*1, 2

VDS=20V, ID=15A, VGS=10V, RGS=1Ω

t_{d(OFF) *1, 2}

t_f

*1, 2

Source-Drain Diode

V_SD

trr

0.8

1.2

I_S=15A, V_GS=0V

I_F=15A, dI_F/dt=100A/μs

Qrr

Note:

*1. Pulse Test : Pulse Width 300μs, Duty Cycle2%

*2. Independent of operating temperature

MTB3D6N04RV8

CYStek Product Specification

Spec. No. : C683V8

Issued Date : 2020.06.23

Revised Date : 2022.10.12

Page No. : 4/9

CYStek Electronics Corp.

Typical Characteristics

Typical Output Characteristics

Breakdown Voltage vs Ambient Temperature

1.2

1.1

10V,9V, 8V,7V,6V,5V,4.5V,4V,3.5V

ID=250μA

VGS=0V

0.9

0.8

VGS=2.5V

-75 -50 -25

25 50 75 100 125 150 175

VDS, Drain-Source Voltage(V)

TJ, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

Body Diode Current vs Source-Drain Voltage

1.2

0.8

0.6

0.4

0.2

VGS=4.5V

VGS=10V

TJ=25°C

TJ=150°C

IS, Body Diode Current (A)

ID, Drain Current(A)

Drain-Source On-State Resistance vs Junction Temperature

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

2.5

VGS=10V, ID=15A

RDS(ON)@TJ=25°C : 3.4mΩ typ.

1.5

ID=15A

0.5

-75 -50 -25

25 50 75 100 125 150 175

VGS, Gate-Source Voltage(V)

TJ, Junction Temperature(°C)

MTB3D6N04RV8

CYStek Product Specification

Spec. No. : C683V8

Issued Date : 2020.06.23

Revised Date : 2022.10.12

Page No. : 5/9

CYStek Electronics Corp.

Typical Characteristics (Cont.)

Threshold Voltage vs Junction Temperature

Capacitance vs Drain-to-Source Voltage

10000

1000

100

1.4

1.2

Ciss

Coss

Crss

ID=1mA

0.8

0.6

0.4

ID=250μA

-75 -50 -25

25 50 75 100 125 150 175

VDS, Drain-Source Voltage(V)

TJ, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

Gate Charge Characteristics

100

VDS=5V

VDS=10V

0.1

VDS=20V

TA=25°C

ID=15A

Pulsed

0.01

0.001

0.01

0.1

100

Qg, Total Gate Charge(nC)

ID, Drain Current(A)

Maximum Safe Operating Area

Maximum Drain Current vs Junction Temperature

100

RDSON

Limited

100μs

1ms

10ms

100ms

TA=25°C, TJ=150°C

0.1

10s

VGS=10V

VGS=10V, RθJA=71°C/W

RθJA=71°C/W

Single Pulse

0.01

0.1

100

125

150

175

VDS, Drain-Source Voltage(V)

TJ Junction Temperature(°C)

MTB3D6N04RV8

CYStek Product Specification

Spec. No. : C683V8

Issued Date : 2020.06.23

Revised Date : 2022.10.12

Page No. : 6/9

CYStek Electronics Corp.

Typical Characteristics (Cont.)

Single Pulse Power Rating, Junction to Ambient

Maximum Drain Current vs Case Temperature

500

400

300

200

100

TJ(MAX)=150°C

TA=25°C

Silicon limit

RθJA=71°C/W

Package limit

VGS=10V, RθJC=5.2°C/W

0.0001

0.001

0.01

0.1

100

125

150

175

Pulse Width(s)

TC, Case Temperature(°C)

Transient Thermal Response Curves

D=0.5

0.2

0.1

1.RθJA(t)=r(t)*RθJA

0.05

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=71°C/W

0.02

0.01

Single Pulse

0.001

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t1, Square Wave Pulse Duration(s)

Recommended Soldering Footprint

Unit : mm

MTB3D6N04RV8

CYStek Product Specification

Spec. No. : C683V8

Issued Date : 2020.06.23

Revised Date : 2022.10.12

Page No. : 7/9

CYStek Electronics Corp.

Reel Dimension

Unit：mm

Carrier Tape Dimension

Pin 1

□

Direction of unreeling

Unit：mm

MTB3D6N04RV8

CYStek Product Specification

Spec. No. : C683V8

Issued Date : 2020.06.23

Revised Date : 2022.10.12

Page No. : 8/9

CYStek Electronics Corp.

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

Pb-free devices

5 +1/-1 seconds

260 +0/-5 C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100C

150C

60-120 seconds

150C

200C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183C

60-150 seconds

217C

60-150 seconds

Peak Temperature(TP)

Time within 5C of actual peak

temperature(tp)

240 +0/-5 C

260 +0/-5 C

10-30 seconds

20-40 seconds

Ramp down rate

6C/second max.

6 minutes max.

8 minutes max.

Time 25 C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTB3D6N04RV8

CYStek Product Specification

Spec. No. : C683V8

Issued Date : 2020.06.23

Revised Date : 2022.10.12

Page No. : 9/9

CYStek Electronics Corp.

DFN3×3 Dimension

Marking:

B3D6

N04R

Date

Code

□□□□ G

Assembly site code

Date Code(counting from left to right) :

1^stcode: year code, the last digit of Christian year

2^ndcode : month code, Jan→A, Feb→B, Mar→C,

Apr→D, May→E, Jun→F, Jul→G, Aug→H,

Sep→J, Oct→K, Nov→L, Dec→M

3^rdand 4^thcodes : production serial number, 01~99

8-Lead DFN3×3 Plastic Package

CYStek Package Code: V8

Millimeters

Inches

Min.

Millimeters

Inches

Min.

DIM

Min.

0.70

0.25

0.10

3.25

3.00

1.48

Max.

0.80

0.35

0.25

3.45

3.20

1.68

TYP

3.40

Max.

0.031

0.014

0.010

0.136

0.126

0.066

TYP

Min.

3.00

2.39

Max.

3.20

2.59

Max.

0.126

0.102

BSC

0.028

0.010

0.004

0.128

0.118

0.058

0.005

0.118

0.094

0.026

0.012

0.005

0.65

BSC

0.30

0.50

0.020

TYP

0.13

TYP

12°

0.15

12°

0.13

3.00

0.134

0.006

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTB3D6N04RV8

CYStek Product Specification

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