MTB3D6N04RV8
更新时间：2025-03-21 11:17:29
品牌：CYSTEKEC
描述：Parts Number : MTB3D6N04RV8; Package : DFN3×3; Channel : Single N; BVDSS(V) : 40; ID(A) : 26; Vgs(±V) : 20; VGS(th) max(V) : 2.5; RDS(ON) @ 10V(mΩ) : 4.4(3.4); RDS(ON) @ 4.5V(mΩ) : 7(5); Ciss typ.(pF) : 1540; Crss typ.(pF) : 75; Qg typ (nC) : 27; Qgd typ.(nC) : 5.3;
概述
数据手册MTB3D6N04RV8 概述
Parts Number : MTB3D6N04RV8; Package : DFN3×3; Channel : Single N; BVDSS(V) : 40; ID(A) : 26; Vgs(±V) : 20; VGS(th) max(V) : 2.5; RDS(ON) @ 10V(mΩ) : 4.4(3.4); RDS(ON) @ 4.5V(mΩ) : 7(5); Ciss typ.(pF) : 1540; Crss typ.(pF) : 75; Qg typ (nC) : 27; Qgd typ.(nC) : 5.3;
MTB3D6N04RV8 数据手册
通过下载MTB3D6N04RV8数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Spec. No. : C683V8
Issued Date : 2020.06.23
Revised Date : 2022.10.12
Page No. : 1/9
CYStek Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB3D6N04RV8
Features
BVDSS
40V
• Low Gate Charge
ID@VGS=10V, TC=25°C
26A
• Fast Switching Characteristic
ID@VGS=10V, TA=25°C
13A
3.4mΩ
5mΩ
RDS(ON) typ.@VGS=10V, ID=15A
RDS(ON) typ.@VGS=4.5V, ID=10A
Equivalent Circuit
Outline
DFN3×3
MTB3D6N04RV8
Ordering Information
Device
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
MTB3D6N04RV8-0-T6-G
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB3D6N04RV8
CYStek Product Specification
Spec. No. : C683V8
Issued Date : 2020.06.23
Revised Date : 2022.10.12
Page No. : 2/9
CYStek Electronics Corp.
Absolute Maximum Ratings (TA=25C)
Parameter
Symbol
VDS
Limits
40
±20
46
Unit
Drain-Source Voltage
V
Gate-Source Voltage
VGS
Continuous Drain Current @ VGS=10V, TC=25C (silicon limit)
Continuous Drain Current @ VGS=10V, TC=25C (package limit)
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ VGS=10V, TA=25C
Continuous Drain Current @ VGS=10V, TA=70C
Pulsed Drain Current
*a
*a
*a
*b
*b
*c
*a
*a
26
ID
26
13
10
A
IDM
IS
104
20
Continuous Body Diode Forward Current @ TC=25C
Pulsed Body Diode Forward Current @ TC=25C
Avalanche Current @ L=0.1mH
ISM
IAS
EAS
104
22
Avalanche Energy @ L=0.5mH
42
mJ
W
24
TC=25C
*a
*a
*b
*b
9.6
TC=100C
Total Power Dissipation
TA=25C
PD
2.7
1.1
TA=70C
Operating Junction and Storage Temperature Range
TJ, Tstg
-55~+150
C
Thermal Data
Parameter
Symbol Steady State Unit
5.2
71
RθJC
RθJA
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient
C/W
*b
Note:
*a. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
*b. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PD is based on RθJA and the maximum allowed junction temperature of 150°C. The
value in any given application depends on the user’s specific board design.
*c. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and
low duty cycles to keep initial TJ=25°C.
MTB3D6N04RV8
CYStek Product Specification
Spec. No. : C683V8
Issued Date : 2020.06.23
Revised Date : 2022.10.12
Page No. : 3/9
CYStek Electronics Corp.
Electrical Characteristics (TA=25C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
40
1
-
-
-
-
2.5
-
VGS=0V, ID=250μA
V
VDS=VGS, ID=250μA
VDS=5V, ID=10A
29
-
S
±
±
100
1
VGS= 20V, VDS=0V
IGSS
-
nA
μA
IDSS
-
-
VDS=32V, VGS=0V
VGS=10V, ID=15A
VGS=4.5V, ID=10A
-
3.4
5
4.4
7
Ω
m
RDS(ON)
-
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
-
-
1540
935
75
-
-
-
-
-
-
-
-
-
-
-
-
Coss
Crss
Rg
pF
VDS=20V, VGS=0V, f=1MHz
Ω
1
f=1MHz
Qg
13
*1, 2
VDS=20V, ID=15A, VGS=4.5V
Qg
27
*1, 2
*1, 2
*1, 2
nC
Qgs
Qgd
4.7
5.3
13.5
14
VDS=20V, ID=15A, VGS=10V
td(ON) *1, 2
tr
*1, 2
ns
VDS=20V, ID=15A, VGS=10V, RGS=1Ω
td(OFF) *1, 2
40
tf
*1, 2
9
Source-Drain Diode
VSD
trr
-
-
-
0.8
34
19
1.2
V
IS=15A, VGS=0V
*1
-
-
ns
nC
IF=15A, dIF/dt=100A/μs
Qrr
Note:
*1. Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2. Independent of operating temperature
MTB3D6N04RV8
CYStek Product Specification
Spec. No. : C683V8
Issued Date : 2020.06.23
Revised Date : 2022.10.12
Page No. : 4/9
CYStek Electronics Corp.
Typical Characteristics
Typical Output Characteristics
Breakdown Voltage vs Ambient Temperature
50
40
30
20
10
0
1.2
1.1
1
10V,9V, 8V,7V,6V,5V,4.5V,4V,3.5V
3V
ID=250μA
VGS=0V
0.9
0.8
VGS=2.5V
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
TJ, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Body Diode Current vs Source-Drain Voltage
8
1.2
1
6
4
2
0
0.8
0.6
0.4
0.2
VGS=4.5V
VGS=10V
TJ=25°C
TJ=150°C
0
5
10
15
20
0
5
10
15
20
IS, Body Diode Current (A)
ID, Drain Current(A)
Drain-Source On-State Resistance vs Junction Temperature
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
3
2.5
2
30
25
20
15
10
5
VGS=10V, ID=15A
RDS(ON)@TJ=25°C : 3.4mΩ typ.
1.5
1
ID=15A
0.5
0
0
0
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150 175
VGS, Gate-Source Voltage(V)
TJ, Junction Temperature(°C)
MTB3D6N04RV8
CYStek Product Specification
Spec. No. : C683V8
Issued Date : 2020.06.23
Revised Date : 2022.10.12
Page No. : 5/9
CYStek Electronics Corp.
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Temperature
Capacitance vs Drain-to-Source Voltage
10000
1000
100
10
1.4
1.2
1
Ciss
Coss
Crss
ID=1mA
0.8
0.6
0.4
ID=250μA
1
0
10
20
30
40
-75 -50 -25
0
25 50 75 100 125 150 175
VDS, Drain-Source Voltage(V)
TJ, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
VDS=5V
8
6
4
2
0
VDS=10V
1
0.1
VDS=20V
TA=25°C
ID=15A
Pulsed
0.01
0.001
0.01
0.1
1
10
100
0
5
10
15
20
Qg, Total Gate Charge(nC)
25
30
ID, Drain Current(A)
Maximum Safe Operating Area
Maximum Drain Current vs Junction Temperature
100
10
14
RDSON
Limited
12
10
8
100μs
1ms
1
10ms
6
100ms
1s
4
TA=25°C, TJ=150°C
0.1
10s
DC
VGS=10V
VGS=10V, RθJA=71°C/W
2
RθJA=71°C/W
Single Pulse
0.01
0
0.01
0.1
1
10
100
25
50
75
100
125
150
175
VDS, Drain-Source Voltage(V)
TJ Junction Temperature(°C)
MTB3D6N04RV8
CYStek Product Specification
Spec. No. : C683V8
Issued Date : 2020.06.23
Revised Date : 2022.10.12
Page No. : 6/9
CYStek Electronics Corp.
Typical Characteristics (Cont.)
Single Pulse Power Rating, Junction to Ambient
Maximum Drain Current vs Case Temperature
500
400
300
200
100
0
60
50
40
30
20
10
0
TJ(MAX)=150°C
TA=25°C
Silicon limit
RθJA=71°C/W
Package limit
VGS=10V, RθJC=5.2°C/W
0.0001
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
Pulse Width(s)
TC, Case Temperature(°C)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
0.05
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=71°C/W
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
Unit : mm
MTB3D6N04RV8
CYStek Product Specification
Spec. No. : C683V8
Issued Date : 2020.06.23
Revised Date : 2022.10.12
Page No. : 7/9
CYStek Electronics Corp.
Reel Dimension
Unit：mm
Carrier Tape Dimension
Pin 1
□
□
□
□
Direction of unreeling
Unit：mm
MTB3D6N04RV8
CYStek Product Specification
Spec. No. : C683V8
Issued Date : 2020.06.23
Revised Date : 2022.10.12
Page No. : 8/9
CYStek Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
5 +1/-1 seconds
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
240 +0/-5 C
260 +0/-5 C
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB3D6N04RV8
CYStek Product Specification
Spec. No. : C683V8
Issued Date : 2020.06.23
Revised Date : 2022.10.12
Page No. : 9/9
CYStek Electronics Corp.
DFN3×3 Dimension
Marking:
D
D
D
D
B3D6
N04R
Date
Code
□□□□ G
S
S
S
G
Assembly site code
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2nd code : month code, Jan→A, Feb→B, Mar→C,
Apr→D, May→E, Jun→F, Jul→G, Aug→H,
Sep→J, Oct→K, Nov→L, Dec→M
3rd and 4th codes : production serial number, 01~99
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
Millimeters
Inches
Min.
Millimeters
Inches
Min.
DIM
DIM
Min.
0.70
0.25
0.10
3.25
3.00
1.48
Max.
0.80
0.35
0.25
3.45
3.20
1.68
TYP
3.40
Max.
0.031
0.014
0.010
0.136
0.126
0.066
TYP
Min.
3.00
2.39
Max.
3.20
2.59
Max.
0.126
0.102
BSC
A
b
c
0.028
0.010
0.004
0.128
0.118
0.058
0.005
0.118
E1
E2
e
H
L
L1
θ
M
0.118
0.094
0.026
0.012
0.012
0.005
-
0.65
BSC
D
0.30
0.30
0.50
0.50
0.020
0.020
TYP
D1
D2
D3
E
0.13
TYP
12°
0.15
12°
0.13
3.00
-
-
0.134
-
0.006
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB3D6N04RV8
CYStek Product Specification
MTB3D6N04RV8 相关器件
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| MTB3D8N03RH8 | CYSTEKEC | Parts Number : MTB3D8N03RH8; Package : DFN5×6; Channel : Single N; BVDSS(V) : 30; ID(A) : 26; Vgs(±V) : 20; VGS(th) max(V) : 2.5; RDS(ON) @ 10V(mΩ) : 4.2(3.2); RDS(ON) @ 4.5V(mΩ) : 6.7(4.8); Ciss typ.(pF) : 1280; Crss typ.(pF) : 116; Qg typ (nC) : 23; Qgd typ.(nC) : 4.5; | 获取价格 |
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| MTB3D8N03RQ8 | CYSTEKEC | Parts Number : MTB3D8N03RQ8; Package : SOP-8; Channel : Single N; BVDSS(V) : 30; ID(A) : 26; Vgs(±V) : 20; VGS(th) max(V) : 2.5; RDS(ON) @ 10V(mΩ) : 4.2(3.2); RDS(ON) @ 4.5V(mΩ) : 6.7(4.8); Ciss typ.(pF) : 1280; Crss typ.(pF) : 116; Qg typ (nC) : 23; Qgd typ.(nC) : 4.5; | 获取价格 |
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| MTB3K0B06KS6R | CYSTEKEC | Parts Number : MTB3K0B06KS6R; Package : SOT-363; Channel : Dual P; BVDSS(V) : -60; ID(A) : -0.24; Vgs(±V) : 20(ESD); VGS(th) max(V) : -2.5; RDS(ON) @ 10V(mΩ) : 4.4(3)Ω; RDS(ON) @ 4.5V(mΩ) : 5(3.3)Ω; Ciss typ.(pF) : 35; Crss typ.(pF) : 7; Qg typ (nC) : 1.5; Qgd typ.(nC) : 0.1; | 获取价格 |
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