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FMOSAB55P02-H

更新时间：2025-04-28 11:17:32

品牌：FORMOSA

描述：Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : -20; ID(A) : -55; PD(W) : 38; IDSS@VDSS(V

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数据手册

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FMOSAB55P02-H 概述

Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : -20; ID(A) : -55; PD(W) : 38; IDSS@VDSS(V

FMOSAB55P02-H 数据手册

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P-Channel SMD Power MOSFET

Formosa MS

FMOSAB55P02

List

List.................................................................................................

Package outline...............................................................................

Features..........................................................................................

Mechanical data...............................................................................

Maximum ratings .............................................................................

Electrical characteristics...................................................................

Rating and characteristic curves.....................................................4~5

Pinning information..........................................................................

Marking...........................................................................................

Suggested solder pad layout.............................................................

Packing information..........................................................................

Reel packing....................................................................................

Suggested thermal profiles for soldering processes.............................

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311BI32

Issued Date

2022/06/08

Revised Date

Revision

Page

Page 1

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB55P02

-55A, -20V, P-Channel MOSFET

Package outline

Features

• -V_DS=20V, -I_D=55A.

T3333P8

• R_DS(ON)< 8.5mΩ, -V_GS= -4.5V, -I_D=15A.

R_DS(ON)< 12mΩ, -V_GS= -2.5V, -I_D=12A.

• High power and current handing capability.

• Lead free product is acquired.

0.031(0.80)

0.028(0.70)

10^o~14^o

• Surface mount package.

0.006(0.15) Max.

• Lead-free parts meet RoHS requirements.

• Suffix "-H" dinicates Halogen-free part, ex.FMOSAB55P02-H.

Application

• PWM application.

• Load switch.

0.010(0.25)

0.004(0.10)

0.026(0.65)BSC

0.104(2.65)

0.090(2.29)

0.026(0.65)

0.011(0.28)

Mechanical data

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, T3333P8

• Mounting Position : Any

0.076(1.94)

0.060(1.54)

0.134(3.40)

0.126(3.20)

0.012(0.30)

0.030(0.77)

0.004(0.10)

0.015(0.37)

0.002(0.05)

0.000(0.00)

0.035(0.89)

0.023(0.59)

• Weight : Approximated 0.02 gram

0.020(0.50)

0.012(0.30)

0.016(0.40)

0.008(0.20)

Dimensions in inches and (millimeters)

Maximum ratings ^{(At T}_C⁼²⁵^o^{C unless otherwise specified)}

Parameter

Symbol

Ratings

Unit

Drain-source voltage

-V_DS

V_GS

±12

Gate-source voltage

Continuous drain current

(T_C=25℃)

-I_D

(T_C=100℃)

Pulsed drain current (Note 1)

Power dissipation

-I_DM

P_D

220

Operating Junction temperature range

Storage temperature range

Thermal resistance Junction to case

T_J

+150

-55 to +150

3.2

℃

T_STG

R_θJC

℃

℃/W

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311BI32

Issued Date

2022/06/08

Revised Date

Revision

Page

Page 2

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB55P02

Electrical characteristics ^{(At T}_J⁼²⁵^o^{C unless otherwise noted)}

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

Off characteristics

Drain-source breakdown voltage

Drain-source leakage current

Gate-source leakage current

-BV_DSS-I_D=250μA, V_GS=0V

-I_DSS

I_GSS

-V_DS=20V, V_GS=0V

V_GS=±12V, V_DS=0V

1.0

µA

±100

On characteristics

Gate threshold voltage

-V_GS(TH)V_GS=V_DS, -I_D=250µA

0.35 0.65

1.0

8.5

-V_GS=4.5V, -I_D=15A

R_DS(ON)

6.6

Static drain-source on-resistance

(Note 3)

mΩ

-V_GS=2.5V, -I_D=12A

Dynamic parameters (Note 5)

Input capacitance

C_iss

4600

460

Out capacitance

C_oss

C_rss

V_GS=0V, -V_DS=10V, f=1.0MHz

Reverse transfer capacitance

459

Switching parameters (Note 5)

Total gate charge

Q_g

Q_gs

Q_gd

t_d(on)

t_r

7.3

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

-V_GS=4.5V, -V_DS=10V, -I_D=15A

111

-V_DS=10V, -V_GS=10V, -I_D=14Α,

R_G=2.7Ω

Turn-off delay time

Fall time

t_d(off)

t_f

Source-drain diode ratings and characteristics

Cuntinuous body diode forward current

Pulse body diode forward current

Drain-source diode forward voltage (Note 4)

Reverse recovery time

-I_S

-I_SM

-V_SD

t_rr

220

1.2

-I_SD=20A, V_GS=0V

-I_SD=15A, V_GS=0V, di/dt=100A/µs

Reverse recovery charge

Q_rr

7.7

Note : 1. Repetitive rating : Pulse width limited by maximum junction temperature.

2. E_AScondition: T_J=25℃, -V_DD=10V, -V_G=10V, R_G=5.9Ω, L=0.5mh, -I_AS=13.2A.

3. Pulse test : Pulse width ≤ 300μs, duty cycle ≤ 0.5.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311BI32

Issued Date

2022/06/08

Revised Date

Revision

Page

Page 3

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB55P02

Rating and characteristic curves

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311BI32

Issued Date

2022/06/08

Revised Date

Revision

Page

Page 4

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB55P02

Rating and characteristic curves

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311BI32

Issued Date

2022/06/08

Revised Date

Revision

Page

Page 5

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB55P02

Pinning information

Simplified outline

Symbol

Pin1 Source

Pin2 Source

Pin3 Source

Pin4 Gate

Pin5 Drain

Pin6 Drain

Pin7 Drain

Pin8 Drain

(Pin：5,6,7,8)

Drain

(Pin：4)

Gate

Source

(Pin：1,2,3)

Marking

Type number

Marking Code

AB55P02

FMOSAB55P02

Suggested solder pad layout

2.80

0.40

0.65

Note:

1.Controlling dimension:in millimeters.

2.General tolerance:±0.05mm.

3.The pad layout is for reference purposes only.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311BI32

Issued Date

2022/06/08

Revised Date

Revision

Page

Page 6

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB55P02

Packing information

•

D²

D¹

W¹

unit:mm

Symbol

T3333P8

Item

Tolerance

Carrier width

Carrier length

Carrier depth

Sprocket hole

0.1

2.0

min

2.0

min

0.5

0.1

0.3

1.0

3.55

1.10

1.50

330.00

100.00

13" Reel outside diameter

13" Reel inner diameter

7" Reel outside diameter

7" Reel inner diameter

Feed hole diameter

Sprocket hole position

Punch hole position

Punch hole pitch

D¹

D²

13.00

1.75

5.50

8.00

4.00

2.00

0.23

12.00

17.60

Sprocket hole pitch

Embossment center

Overall tape thickness

Tape width

P⁰

P¹

W¹

Reel width

Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311BI32

Issued Date

2022/06/08

Revised Date

Revision

Page

Page 7

P-Channel SMD Power MOSFET

Formosa MS

FMOSAB55P02

Reel packing

COMPONENT

SPACING

INNER

BOX

(m/m)

REEL

DIA,

(m/m)

CARTON

SIZE

(m/m)

REEL

(pcs)

BOX

(pcs)

PACKAGE

T3333P8

CARTON

(pcs)

REEL SIZE

13"

(m/m)

5,000

8.0

10,000

355*335*38

330

350*330*360

80,000

Suggested thermal profiles for soldering processes

1.Storage environment : Temperature=5℃~40℃ Humidity=55%±25%

2.Reflow soldering of surface-mount devices

Critical Zone

T_Lto T_P

T_P

Ramp-up

T_L

T_smax

T_smin

t_S

Preheat

Ramp-down

t25℃ to Peak

3.Reflow soldering

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311BI32

Issued Date

2022/06/08

Revised Date

Revision

Page

Page 8

FMOSAB55P02-H 相关器件

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