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FMOSAB57N04-Q1

更新时间：2025-06-29 11:17:26

品牌：FORMOSA

描述：Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 57; PD(W) : 30; EAS(mJ) : 36;

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FMOSAB57N04-Q1 概述

Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 57; PD(W) : 30; EAS(mJ) : 36;

FMOSAB57N04-Q1 数据手册

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N-Channel SMD Power MOSFET

Formosa MS

FMOSAB57N04-Q1

List

List...................................................................................................1

Package outline.................................................................................2

Features...........................................................................................2

Mechanical data................................................................................2

Maximum ratings ..............................................................................2

Electrical characteristics....................................................................3

Rating and characteristic curves.....................................................4~6

Pinning information............................................................................6

Marking............................................................................................6

Suggested solder pad layout...............................................................6

Packing information...........................................................................7

Reel packing.....................................................................................8

Suggested thermal profiles for soldering processes..............................8

High reliability test capabilities..........................................................9

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2024/02/15

Revised Date

Revision

Page

Page 1

DS-2311BL92-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB57N04-Q1

57A 40V N-Channel Enhancement

Mode Power MOSFET

Package outline

Features

• V_DS=40V, I_D=57A.

T3333P8

• R_DS(ON)≤ 5.6mΩ, @V_GS=10V, I_D=20A.

• R_DS(ON)≤ 7.8mΩ, @V_GS=4.5V, I_D=15A.

• Ultra-low on-resistance and low gate charge.

• 100% UIS and R_gtested.

0.124(3.15)

0.116(2.95)

0.010(0.25)

0.004(0.10)

0.031(0.80)

0.028(0.70)

• Qualified to AEC-Q101 standards for high reliability.

• Lead-free parts meet RoHS requirements.

• Suffix "-H" indicates Halogen-free part, ex.FMOSAB57N04-Q1-H.

0.128(3.25)

0.118(3.00)

Mechanical data

0.026(0.65)BSC.

0.014(0.35)

0.010(0.25)

0.020(0.50)

0.010(0.25)

• Epoxy:UL94-V0 rated flame retardant.

• Case : Molded plastic, T3333P8(DFN3333-8).

• Terminals : Solder plated, solder able per MIL-STD-750, Method 2026.

• Mounting Position : Any.

0.102(2.59)

0.094(2.39)

0.020(0.50)

0.012(0.30)

Dimensions in inches and (millimeters)

Maximum ratings ^{(At T}_j⁼²⁵^o^{C unless otherwise noted)}

Parameter

Symbol

V_DS

Ratings

Unit

Drain-source voltage

Gate-source voltage

±20

V_GS

T_C=25ºC

Continuous drain current ^{(Note 1)}

I_D

T_C=100ºC

Pulsed drain current ^{(Note 2)}

Avalanche current ^{(Note 3)}

Avalanche energy ^{(Note 3)}

I_DM

I_AS

230

E_AS

T_C=25ºC

Power dissipation ^{(Note 4)}

P_D

T_C=100ºC

12.2

Thermal resistance, junction to ambient

Thermal resistance Junction to case

Operating Junction temperature

Storage temperature range

R_θJA

R_θJC

T_J

°C/W

°C

4.9

+150

-55 to +150

T_STG

°C

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2024/02/15

Revised Date

Revision

Page

Page 2

DS-2311BL92-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB57N04-Q1

Electrical characteristics ^{(At T}_J⁼²⁵^o^{C unless otherwise noted)}

Parameter

Conditions

Symbol Min.

Typ.

Max. Unit

Off characteristics

Drain-source breakdown voltage

Drain-source leakage current

Gate-source leakage current

I_D=250μA, V_GS=0V

BV_DSS

V_DS=32V, V_GS=0V

I_DSS

µA

V_DS=32V, V_GS=0V, T_J=55ºC

V_GS=±20V, V_DS=0V

I_GSS

±100

On characteristics

Gate threshold voltage

V_GS=V_DS, I_D=250µA

V_GS=10V, I_D=20A

V_GS=4.5V, I_D=15A

V_DS=5V, I_D=20A

V_GS(TH)

R_DS(ON)

g_FS

1.2

1.6

4.5

5.9

2.5

5.6

7.8

mΩ

Static drain-source on-resistance

Forward transconductance

Dynamic parameters^{(Note 5)}

Input capacitance

C_iss

C_oss

C_rss

R_g

1204

536

V_GS=0V, V_DS=20V, f=1.0MHz

V_GS=0V, V_DS=0V, f=1.0MHz

Out capacitance

Reverse transfer capacitance

Gate resistance

1.8

Switching parameters ^{(Note 5)}

V_GS=10V, V_DS=20V, I_D=20A

V_GS=4.5V, V_DS=20V, I_D=20A

Q_g

17.9

9.7

3.2

Total gate charge

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

Q_gs

Q_gd

t_d(on)

t_r

V_GS=0 to 10V, V_DS=20V, I_D=20A

4.8

8.6

V_DS=20V, V_GS=10V, R_L=1Ω, R_GEN=6Ω

Turn-off delay time

Fall time

t_d(off)

t_f

15.2

Source-drain diode ratings and characteristics

Drain-source diode forward voltage

Maximum body diode continuous current

Body diode reverse recovery time

Body diode reverse recovery charge

I_S=1A, V_GS=0V

V_SD

I_S

0.69

T_C=25^oC

I_F=20A, dI_F/dt=100A/μs

t_rr

Q_rr

Notes : 1. Computed continuous current assumes the condition of T_{J_Max}while the actual continuous current depends on the thermal & electro-mechanical application

board design.

2.This single-pulse measurement was taken under T_{J_Max}=150ºC.

3.This single-pulse measurement was taken under the following condition [L=100μH,V_GS=10V,V_DD=20V] while its value is limited by T_{J_Max}=150ºC.

4.The power dissipation P_Dis based on T_{J_Max}=150ºC.

5.This value is guaranteed by design hence it is not included in the production test.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2024/02/15

Revised Date

Revision

Page

Page 3

DS-2311BL92-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB57N04-Q1

Rating and characteristic curves

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2024/02/15

Revised Date

Revision

Page

Page 4

DS-2311BL92-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB57N04-Q1

Rating and characteristic curves

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2024/02/15

Revised Date

Revision

Page

Page 5

DS-2311BL92-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB57N04-Q1

Rating and characteristic curves

On-resistance vs. Gate-Source voltage

Gate charge

Gate-Source voltage, V_GS(V)

Total gate charge, Q_g(nC)

Pinning information

Simplified outline

Symbol

Pin 1,2,3

Pin 4

Source

Gate

Pin 5,6,7,8 Drain

Top view

Bottom view

Marking

Type number

Marking Code

FMOSAB57N04-Q1

SL0406A

Suggested solder pad layout

0.40

2.49

Note:

1.Controlling dimension:in millimeters.

2.General tolerance:±0.05mm.

3.The pad layout is for reference purposes only.

0.65

0.40

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2024/02/15

Revised Date

Revision

Page

Page 6

DS-2311BL92-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB57N04-Q1

Packing information

unit:mm

Symbol

T3333P8

Item

Tolerance

3.55

1.10

1.50

330.00

98.00

Carrier width

Carrier length

Carrier depth

Sprocket hole

0.1

2.0

min

2.0

min

0.5

13" Reel outside diameter

13" Reel inner diameter

7" Reel outside diameter

7" Reel inner diameter

Feed hole diameter

13.00

Punch hole position

Punch hole pitch

Sprocket hole pitch

Embossment center

Tape width

0.1

0.3

5.50

8.00

4.00

2.00

12.00

Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2024/02/15

Revised Date

Revision

Page

Page 7

DS-2311BL92-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB57N04-Q1

Reel packing

COMPONENT

SPACING

INNER

BOX

(m/m)

REEL

DIA,

(m/m)

CARTON

SIZE

(m/m)

REEL

(pcs)

BOX

(pcs)

PACKAGE

T3333P8

CARTON

(pcs)

REEL SIZE

13"

(m/m)

5,000

8.0

10,000

355*335*38

330

350*330*360

80,000

Suggested thermal profiles for soldering processes

1.Storage environment: Temperature=5^oC~40^oC Humidity=55%±25%

2.Reflow soldering of surface-mount devices

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2024/02/15

Revised Date

Revision

Page

Page 8

DS-2311BL92-AEC

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB57N04-Q1

High reliability test capabilities

Item Test

Conditions

Reference

1. MSL Preconditioning

JESD22-A113

24hr bake@125°C+168hrs@85°C

/85%RH+3xIR@260°C+1flux

immersion+alcohol+DI H2O rinse

V^DS=V^DS*80% (T^J=T^Jmax.)Test Duration:1000hrs

2. High Temperature Reverse Bias

3. High Temperature Storage Life

4. Temperature Cycle

JESD22-A108

JESD22 A-103

Ta=150°C Test Duration:1000hrs

-55°C(15min) to 150°C(15min)Test Cycles:1000cycles

P=2atm Ta=121°C RH=100% Test Duration:96hrs

245±5°C for 5sec

JESD22 A-104

JESD22 A-102

J-STD-002

5. Autoclave

6. Solderability

7. Moisture Resistance

8. Resistance To Solder Heat

MIL-STD-750E

METHOD 1021.2

Ta=85°C/85% Relative humidity Test Duration:1000hrs

260±5°C for 10sec

JESD22 B-106

JESD22-A101

9. High Temperature High

Humidity Reverse Bias

Ta=85°C, 85%RH,V^DS=80% ratedV^DSTest

Duration:1000hrs

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date

2024/02/15

Revised Date

Revision

Page

Page 9

DS-2311BL92-AEC

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