2N3029E3
更新时间：2025-01-17 00:28:35
品牌：MICROSEMI
描述：Silicon Controlled Rectifier, 0.785A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18
概述
数据手册2N3029E3 概述
Silicon Controlled Rectifier, 0.785A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18
2N3029E3 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2N303 | ETC | TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 200MA I(C) | TO-22VAR | 获取价格 |
|
| 2N3030 | MICROSEMI | SCRs 0.5 Amp, Planear | 获取价格 |
|
| 2N3030 | SSDI | Silicon Controlled Rectifier, 1.3A I(T)RMS, 500mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-5, TO-5, 3 PIN | 获取价格 |
|
| 2N3030 | DIGITRON | Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 30; Peak Repetitive | 获取价格 |
|
| 2N3030-HR | DIGITRON | Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 30; Peak Repetitive | 获取价格 |
|
| 2N3030E3 | MICROSEMI | Silicon Controlled Rectifier, 0.785A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-18 | 获取价格 |
|
| 2N3031 | MICROSEMI | SCRs 0.5 Amp, Planear | 获取价格 |
|
| 2N3031 | SSDI | Silicon Controlled Rectifier, 1.3A I(T)RMS, 500mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-5, TO-5, 3 PIN | 获取价格 |
|
| 2N3031 | DIGITRON | Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 60; Peak Repetitive | 获取价格 |
|
| 2N3031-HR | DIGITRON | Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 60; Peak Repetitive | 获取价格 |
|
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