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CR05AS-8A

更新时间：2025-07-01 01:41:44
品牌：RENESAS
描述：SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89

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中文翻译

免费 PCB/SMT

CR05AS-8A 概述

SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89 可控硅整流器

CR05AS-8A 规格参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.84
最大直流栅极触发电流：0.03 mA最大直流栅极触发电压：0.8 V
最大维持电流：3 mA最大漏电流：0.1 mA
通态非重复峰值电流：10 A最大通态电压：1.9 V
最大通态电流：500 A最高工作温度：125 °C
最低工作温度：-40 °C断态重复峰值电压：400 V
子类别：Silicon Controlled Rectifiers表面贴装：YES
触发设备类型：SCRBase Number Matches：1

CR05AS-8A 数据手册

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To all our customers  
Regarding the change of names mentioned in the document, such as Mitsubishi  
Electric and Mitsubishi XX, to Renesas Technology Corp.  
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi  
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names  
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.  
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been  
made to the contents of the document, and these changes do not constitute any alteration to the  
contents of the document itself.  
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices  
and power devices.  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR05AS  
LOW POWER USE  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
CR05AS  
OUTLINE DRAWING  
in mm  
4.4±0.1  
1.5±0.1  
1.6±0.2  
➀
➁
➂
0.5±0.07  
0.4±0.07  
+0.03  
–0.05  
0.4  
1.5±0.1 1.5±0.1  
(Back side)  
➁
CATHODE  
ANODE  
GATE  
➀
➁
➂
➂
➀
• IT (AV) ........................................................................0.5A  
• VDRM ..............................................................200V/400V  
• IGT .........................................................................100µA  
SOT-89  
APPLICATION  
Solid state relay, strobe flasher, ignitor, hybrid IC  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
4 (marked “CB”)  
8 (marked “CD”)  
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
200  
300  
160  
200  
160  
400  
500  
320  
400  
320  
V
V
V
V
V
VRSM  
VR (DC)  
VDRM  
✽1  
✽1  
Repetitive peak off-state voltage  
DC off-state voltage  
VD (DC)  
Symbol  
Parameter  
RMS on-state current  
Average on-state current  
Surge on-state current  
Conditions  
Ratings  
0.79  
0.5  
Unit  
A
IT (RMS)  
IT (AV)  
ITSM  
✽2  
Commercial frequency, sine half wave, 180° conduction, Ta=57°C  
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive  
10  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
0.4  
A s  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
0.1  
W
W
V
0.01  
6
6
0.1  
V
A
–40 ~ +125  
–40 ~ +125  
48  
°C  
°C  
mg  
Tstg  
Storage temperature  
—
Weight  
Typical value  
✽1. With Gate-to-cathode resistance RGK=1kΩ  
Jan.2000  
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR05AS  
LOW POWER USE  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
ELECTRICAL CHARACTERISTICS  
Limits  
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
—
—
—
—
0.2  
1
Typ.  
—
Max.  
0.1  
0.1  
1.9  
0.8  
—
mA  
mA  
V
IRRM  
Repetitive peak reverse current  
Repetitive peak off-state current  
On-state voltage  
Tj=125°C, VRRM applied  
IDRM  
VTM  
VGT  
VGD  
IGT  
Tj=125°C, VDRM applied, RGK=1kΩ  
Ta=25°C, ITM=1.5A, instantaneous value  
—
—
✽4  
—
V
Gate trigger voltage  
Ta=25°C, VD=6V, IT=0.1A  
—
Gate non-trigger voltage  
Gate trigger current  
Tj=125°C, VD=1/2VDRM, RGK=1kΩ  
V
✽3  
✽4  
—
100  
3
µA  
mA  
°C/W  
Tj=25°C, VD=6V, IT=0.1A  
—
—
—
IH  
Holding current  
Tj=25°C, VD=12V, RGK=1kΩ  
✽2  
—
70  
Rth (j-a)  
Thermal resistance  
Junction to ambient  
✽2. Soldering with ceramic plate (25mm × 25mm × t0.7).  
✽3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)  
Item  
A
B
C
IGT (µA)  
1 ~ 30  
20 ~ 50  
40 ~ 100  
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.  
✽4. IGT, VGT measurement circuit.  
60Ω  
A1  
I
GS  
IGT  
TUT  
A3  
A2  
6V  
DC  
3V  
DC  
V1  
V
R
GK  
1
2
GT  
1kΩ  
SWITCH  
SWITCH 1 : IGT measurement  
SWITCH 2 : VGT measurement  
(Inner resistance of voltage meter is about 1kΩ)  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTICS  
RATED SURGE ON-STATE CURRENT  
102  
10  
9
8
7
6
5
4
3
2
1
0
7
Ta = 25°C  
5
3
2
101  
7
5
3
2
100  
7
5
3
2
10–1  
0
1
2
3
4
5
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
Jan.2000  
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR05AS  
LOW POWER USE  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
GATE TRIGGER CURRENT VS.  
JUNCTION TEMPERATURE  
103  
GATE CHARACTERISTICS  
102  
7
7
5
TYPICAL EXAMPLE  
5
3
2
3
2
V
FGM = 6V  
PGM = 0.1W  
101  
7
102  
7
5
3
2
5
3
2
P
G(AV) = 0.01W  
V
GT = 0.8V  
100  
7
I
GT = 100µA  
5
3
2
(T  
j = 25°C)  
101  
7
5
3
2
10–1  
7
5
V
GD = 0.2V  
IFGM = 0.1A  
3
2
100  
–60 –40–20  
10–2  
10–22 3 5710–12 3 571002 3 571012 3 57102  
GATE CURRENT (mA)  
0
20 40 60 80 100 120140  
JUNCTION TEMPERATURE (°C)  
GATE CURRENT VS.  
JUNCTION TEMPERATURE  
GATE TRIGGER VOLTAGE VS.  
JUNCTION TEMPERATURE  
200  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
TYPICAL EXAMPLE  
GT (25°C)  
180  
160  
140  
120  
100  
80  
I
DISTRIBUTION  
# 1 32µA  
# 2 9µA  
# 1  
# 2  
TYPICAL EXAMPLE  
60  
40  
See  
3
20  
0
–40–20 0 20 40 60 80 100120140160  
–40–20 0 20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(JUNCTION TO AMBIENT)  
MAXIMUM AVERAGE POWER DISSIPATION  
(SINGLE-PHASE HALF WAVE)  
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103  
103  
1.5  
7
25 25 t0.7  
ALUMINUM BOARD  
WITH SOLDERING  
5
3
2
θ = 30° 60° 90°120°  
180°  
1.0  
0.5  
102  
7
5
3
2
101  
7
5
θ
3
2
360°  
RESISTIVE, INDUCTIVE LOADS  
0
100  
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100  
TIME (s)  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
AVERAGE ON-STATE CURRENT (A)  
Jan.2000  
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR05AS  
LOW POWER USE  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
ALLOWABLE AMBIENT TEMPERATURE VS.  
AVERAGE ON-STATE CURRENT  
(SINGLE-PHASE HALF WAVE)  
MAXIMUM AVERAGE POWER DISSIPATION  
(SINGLE-PHASE FULL WAVE)  
160  
25 25 t0.7  
ALUMINUM BOARD  
WITH SOLDERING  
1.5  
90°  
140  
120  
100  
80  
θ = 30° 60° 120°  
θ
360°  
180°  
RESISTIVE,  
INDUCTIVE  
LOADS  
NATURAL  
CONVECTION  
1.0  
60  
0.5  
θ = 30°  
90°  
180°  
40  
θ
θ
60° 120°  
360°  
20  
RESISTIVE LOADS  
0
0
0
0.2  
0.4  
0.6  
0.8  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
AVERAGE ON-STATE CURRENT (A)  
AVERAGE ON-STATE CURRENT (A)  
ALLOWABLE AMBIENT TEMPERATURE VS.  
AVERAGE ON-STATE CURRENT  
(SINGLE-PHASE FULL WAVE)  
MAXIMUM AVERAGE POWER DISSIPATION  
(RECTANGULAR WAVE)  
160  
90° 180°  
25 25 t0.7  
ALUMINUM BOARD  
WITH SOLDERING  
1.5  
θ = 30° 60° 120° 270°  
140  
120  
100  
80  
θ
θ
DC  
360°  
RESISTIVE  
LOADS  
NATURAL  
CONVECTION  
1.0  
60  
θ
0.5  
360°  
40  
60°  
120°  
RESISTIVE,  
INDUCTIVE  
θ = 30°  
90°  
180°  
20  
LOADS  
0
0
0
0.2  
0.4  
0.6  
0.8  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8  
AVERAGE ON-STATE CURRENT (A)  
AVERAGE ON-STATE CURRENT (A)  
ALLOWABLE AMBIENT TEMPERATURE VS.  
AVERAGE ON-STATE CURRENT  
(RECTANGULAR WAVE)  
160  
BREAKOVER VOLTAGE VS.  
JUNCTION TEMPERATURE  
160  
140  
120  
100  
80  
±
25 25 t0.7  
TYPICAL EXAMPLE  
ALUMINUM BOARD  
WITH SOLDERING  
NATURAL  
140  
120  
100  
80  
θ
360°  
CONVECTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
RGK = 1kΩ  
60  
60  
DC  
40  
40  
θ = 30° 60°  
120°  
270°  
20  
20  
90° 180°  
0.4  
0
0
0
0.2  
0.6  
0.8  
–40–20 0 20 40 60 80 100120140160  
AVERAGE ON-STATE CURRENT (A)  
JUNCTION TEMPERATURE (°C)  
Jan.2000  
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR05AS  
LOW POWER USE  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
BREAKOVER VOLTAGE VS.  
GATE TO CATHODE RESISTANCE  
BREAKOVER VOLTAGE VS.  
RATE OF RISE OF OFF-STATE VOLTAGE  
120  
120  
100  
80  
60  
40  
20  
0
TYPICAL EXAMPLE  
Tj = 125°C  
100  
80  
60  
40  
20  
0
# 2  
# 1  
TYPICAL EXAMPLE  
# 1 IGT (25°C)= 10µA  
# 2 IGT (25°C)= 66µA  
Tj = 125°C, RGK = 1kΩ  
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102  
100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103  
GATE TO CATHODE RESISTANCE (kΩ)  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
HOLDING CURRENT VS.  
HOLDING CURRENT VS.  
JUNCTION TEMPERATURE  
GATE TO CATHODE RESISTANCE  
102  
7
5
500  
TYPICAL EXAMPLE  
T
j
= 25°C  
IGT (25°C) I  
H
(1kΩ)  
# 1 13µA  
# 2 59µA  
1.6mA  
1.8mA  
I
I
H
(25°C) = 1mA  
3
2
400  
300  
200  
GT (25°C) = 25µA  
# 1  
101  
7
DISTRIBUTION  
TYPICAL  
EXAMPLE  
5
# 2  
3
2
100  
7
5
100  
0
3
2
T
j
= 25°C  
10–1  
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102  
–60–40–20 0 20 40 60 80 100120140  
JUNCTION TEMPERATURE (°C)  
GATE TO CATHODE RESISTANCE (kΩ)  
REPETITIVE PEAK REVERSE VOLTAGE VS.  
JUNCTION TEMPERATURE  
GATE TRIGGER CURRENT VS.  
GATE CURRENT PULSE WIDTH  
103  
160  
TYPICAL EXAMPLE  
TYPICAL EXAMPLE  
7
5
4
3
2
# 1  
# 2  
IGT (25°C)  
140  
120  
100  
80  
# 1 10µA  
# 2 66µA  
102  
7
5
4
60  
40  
3
2
20  
T
j
= 25°C  
3 4 5 7 101  
0
101  
100  
2
102  
2 3 4 5 7  
–40–20 0 20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
GATE CURRENT PULSE WIDTH (µs)  
Jan.2000  

CR05AS-8A 相关器件

型号 制造商 描述 价格 文档
CR05AS-8AB MITSUBISHI Silicon Controlled Rectifier, 1 Element, SOT-89, 3 PIN 获取价格
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CR05AS-8C RENESAS SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89 获取价格
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