CR05AS-8A
更新时间：2025-01-12 01:41:44
品牌：RENESAS
描述：SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89
概述
规格参数
数据手册CR05AS-8A 概述
SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89 可控硅整流器
CR05AS-8A 规格参数
| 生命周期： | Obsolete | 包装说明： | , |
| Reach Compliance Code： | compliant | 风险等级： | 5.84 |
| 最大直流栅极触发电流： | 0.03 mA | 最大直流栅极触发电压： | 0.8 V |
| 最大维持电流： | 3 mA | 最大漏电流： | 0.1 mA |
| 通态非重复峰值电流： | 10 A | 最大通态电压： | 1.9 V |
| 最大通态电流： | 500 A | 最高工作温度： | 125 °C |
| 最低工作温度： | -40 °C | 断态重复峰值电压： | 400 V |
| 子类别： | Silicon Controlled Rectifiers | 表面贴装： | YES |
| 触发设备类型： | SCR | Base Number Matches： | 1 |
CR05AS-8A 数据手册
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Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Dimensions
CR05AS
OUTLINE DRAWING
in mm
4.4±0.1
1.5±0.1
1.6±0.2
➀
➁
➂
0.5±0.07
0.4±0.07
+0.03
–0.05
0.4
1.5±0.1 1.5±0.1
(Back side)
➁
CATHODE
ANODE
GATE
➀
➁
➂
➂
➀
• IT (AV) ........................................................................0.5A
• VDRM ..............................................................200V/400V
• IGT .........................................................................100µA
SOT-89
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
4 (marked “CB”)
8 (marked “CD”)
VRRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
200
300
160
200
160
400
500
320
400
320
V
V
V
V
V
VRSM
VR (DC)
VDRM
✽1
✽1
Repetitive peak off-state voltage
DC off-state voltage
VD (DC)
Symbol
Parameter
RMS on-state current
Average on-state current
Surge on-state current
Conditions
Ratings
0.79
0.5
Unit
A
IT (RMS)
IT (AV)
ITSM
✽2
Commercial frequency, sine half wave, 180° conduction, Ta=57°C
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive
10
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
0.4
A s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
0.1
W
W
V
0.01
6
6
0.1
V
A
–40 ~ +125
–40 ~ +125
48
°C
°C
mg
Tstg
Storage temperature
—
Weight
Typical value
✽1. With Gate-to-cathode resistance RGK=1kΩ
Jan.2000
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
—
—
—
0.2
1
Typ.
—
Max.
0.1
0.1
1.9
0.8
—
mA
mA
V
IRRM
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Tj=125°C, VRRM applied
IDRM
VTM
VGT
VGD
IGT
Tj=125°C, VDRM applied, RGK=1kΩ
Ta=25°C, ITM=1.5A, instantaneous value
—
—
✽4
—
V
Gate trigger voltage
Ta=25°C, VD=6V, IT=0.1A
—
Gate non-trigger voltage
Gate trigger current
Tj=125°C, VD=1/2VDRM, RGK=1kΩ
V
✽3
✽4
—
100
3
µA
mA
°C/W
Tj=25°C, VD=6V, IT=0.1A
—
—
—
IH
Holding current
Tj=25°C, VD=12V, RGK=1kΩ
✽2
—
70
Rth (j-a)
Thermal resistance
Junction to ambient
✽2. Soldering with ceramic plate (25mm × 25mm × t0.7).
✽3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
A
B
C
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
✽4. IGT, VGT measurement circuit.
60Ω
A1
I
GS
IGT
TUT
A3
A2
6V
DC
3V
DC
V1
V
R
GK
1
2
GT
1kΩ
SWITCH
SWITCH 1 : IGT measurement
SWITCH 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
102
10
9
8
7
6
5
4
3
2
1
0
7
Ta = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
1
2
3
4
5
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Jan.2000
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
GATE CHARACTERISTICS
102
7
7
5
TYPICAL EXAMPLE
5
3
2
3
2
V
FGM = 6V
PGM = 0.1W
101
7
102
7
5
3
2
5
3
2
P
G(AV) = 0.01W
V
GT = 0.8V
100
7
I
GT = 100µA
5
3
2
(T
j = 25°C)
101
7
5
3
2
10–1
7
5
V
GD = 0.2V
IFGM = 0.1A
3
2
100
–60 –40–20
10–2
10–22 3 5710–12 3 571002 3 571012 3 57102
GATE CURRENT (mA)
0
20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
GATE CURRENT VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
200
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
TYPICAL EXAMPLE
GT (25°C)
180
160
140
120
100
80
I
DISTRIBUTION
# 1 32µA
# 2 9µA
# 1
# 2
TYPICAL EXAMPLE
60
40
See
3
20
0
–40–20 0 20 40 60 80 100120140160
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
1.5
7
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
5
3
2
θ = 30° 60° 90°120°
180°
1.0
0.5
102
7
5
3
2
101
7
5
θ
3
2
360°
RESISTIVE, INDUCTIVE LOADS
0
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
Jan.2000
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
160
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
1.5
90°
140
120
100
80
θ = 30° 60° 120°
θ
360°
180°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
1.0
60
0.5
θ = 30°
90°
180°
40
θ
θ
60° 120°
360°
20
RESISTIVE LOADS
0
0
0
0.2
0.4
0.6
0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
160
90° 180°
25 25 t0.7
ALUMINUM BOARD
WITH SOLDERING
1.5
θ = 30° 60° 120° 270°
140
120
100
80
θ
θ
DC
360°
RESISTIVE
LOADS
NATURAL
CONVECTION
1.0
60
θ
0.5
360°
40
60°
120°
RESISTIVE,
INDUCTIVE
θ = 30°
90°
180°
20
LOADS
0
0
0
0.2
0.4
0.6
0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
140
120
100
80
±
25 25 t0.7
TYPICAL EXAMPLE
ALUMINUM BOARD
WITH SOLDERING
NATURAL
140
120
100
80
θ
360°
CONVECTION
RESISTIVE,
INDUCTIVE
LOADS
RGK = 1kΩ
60
60
DC
40
40
θ = 30° 60°
120°
270°
20
20
90° 180°
0.4
0
0
0
0.2
0.6
0.8
–40–20 0 20 40 60 80 100120140160
AVERAGE ON-STATE CURRENT (A)
JUNCTION TEMPERATURE (°C)
Jan.2000
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
120
120
100
80
60
40
20
0
TYPICAL EXAMPLE
Tj = 125°C
100
80
60
40
20
0
# 2
# 1
TYPICAL EXAMPLE
# 1 IGT (25°C)= 10µA
# 2 IGT (25°C)= 66µA
Tj = 125°C, RGK = 1kΩ
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103
GATE TO CATHODE RESISTANCE (kΩ)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
GATE TO CATHODE RESISTANCE
102
7
5
500
TYPICAL EXAMPLE
T
j
= 25°C
IGT (25°C) I
H
(1kΩ)
# 1 13µA
# 2 59µA
1.6mA
1.8mA
I
I
H
(25°C) = 1mA
3
2
400
300
200
GT (25°C) = 25µA
# 1
101
7
DISTRIBUTION
TYPICAL
EXAMPLE
5
# 2
3
2
100
7
5
100
0
3
2
T
j
= 25°C
10–1
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
GATE TO CATHODE RESISTANCE (kΩ)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
160
TYPICAL EXAMPLE
TYPICAL EXAMPLE
7
5
4
3
2
# 1
# 2
IGT (25°C)
140
120
100
80
# 1 10µA
# 2 66µA
102
7
5
4
60
40
3
2
20
T
j
= 25°C
3 4 5 7 101
0
101
100
2
102
2 3 4 5 7
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
GATE CURRENT PULSE WIDTH (µs)
Jan.2000
CR05AS-8A 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| CR05AS-8AB | MITSUBISHI | Silicon Controlled Rectifier, 1 Element, SOT-89, 3 PIN | 获取价格 |
|
| CR05AS-8B | RENESAS | SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89 | 获取价格 |
|
| CR05AS-8C | RENESAS | SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89 | 获取价格 |
|
| CR05AS-8_05 | RENESAS | Thyristor Low Power Use | 获取价格 |
|
| CR05AS-8_10 | RENESAS | Thyristor Low Power Use | 获取价格 |
|
| CR05AS4A | MITSUBISHI | Silicon Controlled Rectifier, 500mA I(T), 200V V(DRM) | 获取价格 |
|
| CR05AS4B | MITSUBISHI | Silicon Controlled Rectifier, 500mA I(T), 200V V(DRM) | 获取价格 |
|
| CR05AS4C | MITSUBISHI | Silicon Controlled Rectifier, 500mA I(T), 200V V(DRM) | 获取价格 |
|
| CR05AS8B | MITSUBISHI | Silicon Controlled Rectifier, 500mA I(T), 400V V(DRM) | 获取价格 |
|
| CR05BM-12A | RENESAS | 600V - 0.5A - Thyristor Low Power Use | 获取价格 |
|
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