1N5802US/1N5804US/1N5806US
Superfast Recovery Diodes
Surface Mount (US)
POWER DISCRETES
Description
Features
Quick reference data
Very low reverse recovery time
Hermetically sealed non-cavity construction
Soft, non-snap, off recovery characteristics
Very low forward voltage drop
VR 50 -150 V
IF 1N5802US to 1N5806US = 2.5A
trr 1N5802US to 1N5806US = 25nS
IR 1N5802US to 1N5806US = 1µA
These products are qualified to MIL-PRF-19500/477
and are preferred parts as listed in MIL-HDBK-5961.
They can be supplied fully released as JANTX and
JANTXV versions.
Electrical Specifications
Electrical specifications @ TA = 25°C unless otherwise specified.
Symbol
1N5802US
1N5804US
1N5806US
Units
Working Reverse Voltage
Repetitive Reverse Voltage
VRWM
VRRM
50
50
100
100
150
150
V
V
Average Forward Current
IF(AV)
IFRM
2.5
14
A
A
(@ 75°C lead length = 0.375')
Repetitive Surge Current
(@ 55°C lead length = 0.375')
Non-Repetitive Surge Current
IFSM
35
A
(tp = 8.3mS @ Vr & TJMAX
)
Storage Temperature Range
TSTG
-65 to +175
°C
Average Forward Current Max
(pcb mounted: TA = 55°C)
Sine wave
IF(AV)
IF(AV)
I2t
1.0
1.1
A
A2S
V
Square wave (d = 0.5)
I2t for fusing (t = 8.3mS) max
10
Forward Voltage Drop max
@ TJ = 25°C
VF
0.875 @ 1A
Reverse Current max
@ V , T = 25°C
@ VWWRRMM, TJJ= 100°C
I
1.0
50
IRR
µA
Reverse Recovery Time max
(1.0A IF to 1.0A IRM recover to 0.25A IRM(REC)
)
trr
CJ
25
25
13
nS
pF
Junction Capacitance typ
@ VR = 5V f = 1MHz
Thermal Resistance to end cap
RθJEC
°C/W
Revision: May 26, 2006
1
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