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SI7434DP-T1-E3

更新时间：2025-04-20 10:19:23
品牌：VISHAY
描述：N-CHANNEL 250-V (D-S) MOSFET

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SI7434DP-T1-E3 概述

N-CHANNEL 250-V (D-S) MOSFET N沟道250 -V （D -S ）的MOSFET 功率场效应晶体管

SI7434DP-T1-E3 规格参数

是否无铅：不含铅生命周期：Active
零件包装代码：SOT包装说明：SMALL OUTLINE, R-XDSO-C5
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：1.55
Is Samacsys：N雪崩能效等级（Eas）：8.4 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (Abs) (ID)：2.3 A
最大漏极电流 (ID)：2.3 A最大漏源导通电阻：0.155 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XDSO-C5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：5.2 W
最大脉冲漏极电流 (IDM)：40 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI7434DP-T1-E3 数据手册

通过下载SI7434DP-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7434DP  
Vishay Siliconix  
New Product  
N-Channel 250-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D PWM-OptimizedTrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D 100% Rg Tested  
D Avalanche Tested  
APPLICATIONS  
0.155 @ V = 10 V  
GS  
3.8  
3.7  
250  
0.162 @ V = 6 V  
GS  
D Primary Side Switch In:  
− Telecom Power Supplies  
− Distributed Power Architectures  
− Miniature Power Modules  
PowerPAK SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
N-Channel MOSFET  
Bottom View  
Ordering Information: Si7434DP-T1—E3  
Creepage Clearance: 30 mils  
S
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
250  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
3.8  
3.0  
2.3  
1.8  
A
a
Continuous Drain Current (T = 150__C)  
I
D
J
T
A
Pulsed Drain Current  
I
40  
A
DM  
a
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
4.3  
1.6  
S
L = 0.1 mH  
I
AS  
13  
Single Pulse Avalanche Energy  
E
8.4  
mJ  
AS  
T
= 25_C  
= 70_C  
5.2  
3.3  
1.9  
1.2  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
−55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
19  
52  
24  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.5  
1.8  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72579  
S-32408—Rev. A, 24-Nov-03  
www.vishay.com  
1
Si7434DP  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
2.0  
4.0  
"100  
1
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
nA  
DS  
GSS  
V
= 250 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 250 V, V = 0 V, T = 55_C  
15  
DS  
GS  
J
a
On-State Drain Current  
I
30  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.129  
0.131  
0.155  
0.162  
V
= 10 V, I = 3.8 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 6.0 V, I = 3.7 A  
D
GS  
a
Forward Transconductance  
g
V
= 15 V, I = 3.8 A  
14  
S
V
fs  
DS  
D
a
Diode Forward Voltage  
V
I
S
= 2.8 A, V = 0 V  
0.75  
1.2  
50  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
34  
6.8  
10.5  
1.2  
16  
g
Q
gs  
Q
gd  
V
= 100 V, V = 10 V, I = 3.8 A  
nC  
DS  
GS  
D
R
0.6  
1.8  
25  
W
g
t
d(on)  
t
23  
35  
r
V
= 100 V, R = 25 W  
L
DD  
I
D
^ 4.0 A, V  
= 10 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
47  
70  
ns  
d(off)  
t
19  
30  
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 2.8 A, di/dt = 100 A/ms  
100  
150  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
30  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10 thru 6 V  
GS  
24  
18  
12  
6
5 V  
T
C
= 125_C  
25_C  
−55_C  
0
0
0
2
4
6
8
10  
0
1
2
3
4
5
6
V
− Drain-to-Source Voltage (V)  
V
− Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 72579  
S-32408—Rev. A, 24-Nov-03  
www.vishay.com  
2
Si7434DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.30  
2500  
2000  
1500  
1000  
500  
0.24  
0.18  
C
iss  
V
= 6 V  
GS  
V
= 10 V  
GS  
0.12  
0.06  
0.00  
C
oss  
C
rss  
0
0
8
16  
24  
32  
40  
35  
1.2  
0
50  
100  
150  
200  
250  
I
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
D
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.5  
2.0  
1.5  
1.0  
0.5  
V
D
= 100 V  
= 3.8 A  
V
D
= 10 V  
GS  
I = 3.8 A  
DS  
I
6
4
2
0
0
7
14  
21  
28  
−50 −25  
0
25  
50  
75  
100 125 150  
Q
g
− Total Gate Charge (nC)  
T
− Junction Temperature (_C)  
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
50  
10  
I
D
= 3.8 A  
T = 150_C  
J
T = 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
V
− Source-to-Drain Voltage (V)  
V
− Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 72579  
S-32408—Rev. A, 24-Nov-03  
www.vishay.com  
3
Si7434DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Juncion-to-Ambient  
1.0  
100  
80  
0.5  
I
D
= 250 mA  
60  
0.0  
−0.5  
−1.0  
−1.5  
40  
20  
0
−50 −25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
J
− Temperature (_C)  
Time (sec)  
Safe Operating Area, Junction-to-Case  
100  
Limited  
DS(on)  
10  
1
by r  
1 ms  
10 ms  
100 ms  
1 s  
0.1  
0.01  
10 s  
dc  
T
= 25_C  
C
Single Pulse  
0.001  
0.1  
1
10  
100  
1000  
V
− Drain-to-Source Voltage (V)  
DS  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 68_C/W  
thJA  
(t)  
3. T − T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72579  
S-32408—Rev. A, 24-Nov-03  
www.vishay.com  
4
Si7434DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 72579  
S-32408—Rev. A, 24-Nov-03  
www.vishay.com  
5

SI7434DP-T1-E3 CAD模型

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SI7434DP-T1-E3 相关器件

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