首页 > SI7439DP-T1-E3

SI7439DP-T1-E3

更新时间：2025-07-09 01:40:05
品牌：VISHAY
描述：P-Channel 150-V (D-S) MOSFET

PDF下载

中文翻译

免费 PCB/SMT

SI7439DP-T1-E3 概述

P-Channel 150-V (D-S) MOSFET P沟道150 -V （D -S ）的MOSFET

SI7439DP-T1-E3 数据手册

通过下载SI7439DP-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Si7439DP  
Vishay Siliconix  
New Product  
P-Channel 150-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFETS  
VDS (V)  
rDS(on) (W)  
ID (A)  
D Ultra-Low On-Resistance Critical for Application  
D Low Thermal Resistance PowerPAKr  
Package with Low 1.07-mm Profile  
0.090 @ V = −10 V  
−5.2  
−5.0  
GS  
−150  
0.095 @ V = −6 V  
GS  
D 100% Rg and Avalanche Tested  
APPLICATIONS  
D Active Clamp in Intermediate DC/DC Power  
Supplies  
PowerPAK SO-8  
S
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
Bottom View  
Ordering Information: Si7439DP-T1—E3  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
−150  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
−3.0  
−2.4  
−5.2  
−4.1  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
−50  
DM  
a
Continuous Source Current (Diode Conduction)  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
I
−4.2  
−1.6  
S
I
AS  
−40  
L = 0.1 mH  
E
AS  
80  
mJ  
T
= 25_C  
= 70_C  
5.4  
3.4  
1.9  
1.2  
A
a
Maximum Power Dissipation  
P
D
W
T
A
Operating Junction and Storage Temperature Range  
T , T  
−55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
18  
50  
23  
65  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Case (Drain)  
Notes  
1.0  
1.5  
thJC  
Document Number: 73106  
S-41526—Rev. A, 16-Aug-04  
www.vishay.com  
1
Si7439DP  
New Product  
Vishay Siliconix  
a. Surface Mounted on 1” x 1” FR4 Board.  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = −250 mA  
−2.0  
−4.0  
V
GS(th)  
DS  
GS  
D
I
V
= 0 V, V = "20 V  
"100  
nA  
GSS  
DS  
GS  
V
= −150 V, V = 0 V  
−1  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= −150 V, V = 0 V, T = 70_C  
−10  
GS  
J
a
On-State Drain Current  
I
V
DS  
= −10 V, V = −10 V  
−30  
A
D(on)  
GS  
V
= −10 V, I = −5.2 A  
0.073  
0.077  
0.090  
0.095  
GS  
D
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= −6 V, I = −5.0 A  
GS  
D
a
Forward Transconductance  
g
19  
S
V
V
= −15 V, I = −5.2 A  
fs  
DS  
D
a
Diode Forward Voltage  
V
SD  
I
= −4.2 A, V = 0 V  
−0.78  
−1.2  
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Q
88  
135  
g
Q
Q
V
DS  
= −75 V, V = −10 V, I = −5.2 A  
17.5  
26.5  
nC  
gs  
gd  
GS  
D
Gate Resistance  
R
g
1.5  
3
4.5  
W
Turn-On Delay Time  
Rise Time  
t
25  
46  
40  
70  
d(on)  
t
r
V
= −75 V, R = 15.5 W  
L
DD  
I
D
^ −4.8 A, V  
= −10 V, R = 6 W  
GEN g  
Turn-Off Delay Time  
Fall Time  
t
115  
64  
180  
100  
150  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
Notes  
t
rr  
I
= −2.9 A, di/dt = 100 A/ms  
100  
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
50  
40  
30  
20  
10  
0
40  
V
GS  
= 10 thru 5 V  
35  
30  
25  
20  
15  
10  
5
T
= 125_C  
25_C  
C
4 V  
−55_C  
0
0
2
4
6
8
10  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5  
V
DS  
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 73106  
S-41526—Rev. A, 16-Aug-04  
www.vishay.com  
2
Si7439DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
6000  
5000  
4000  
3000  
2000  
1000  
0
0.15  
0.12  
C
iss  
0.09  
0.06  
0.03  
0.00  
V
GS  
= 6 V  
V
GS  
= 10 V  
C
oss  
C
rss  
0
10  
20  
30  
40  
50  
0
30  
60  
90  
120  
150  
I
D
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
V
D
= 75 V  
V
GS  
= 10 V  
DS  
I
= 5.2 A  
I = 5.2 A  
D
6
4
2
0
0
15  
Q
30  
45  
60  
75  
90  
−50 −25  
0
25  
50  
75  
100 125 150  
− Total Gate Charge (nC)  
T
− Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistancevs. Gate-to-Source Voltage  
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
40  
10  
T
= 150_C  
J
I
D
= 5.2 A  
T
= 25_C  
J
1
0.1  
0
2
4
6
8
10  
0.00  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 73106  
S-41526—Rev. A, 16-Aug-04  
www.vishay.com  
3
Si7439DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
1.3  
200  
160  
1.0  
I
D
= 250 mA  
0.7  
0.4  
120  
80  
0.1  
40  
0
−0.2  
−0.5  
−50 −25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
− Temperature (_C)  
Time (sec)  
J
Safe Operating Area  
100  
Limited by  
r
DS(on)  
10  
1
10 ms  
100 ms  
T
= 25_C  
C
0.1  
1 s  
Single Pulse  
10 s  
dc  
0.01  
0.1  
1
10  
100  
1000  
V
DS  
− Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 50_C/W  
thJA  
(t)  
3. T − T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 73106  
S-41526—Rev. A, 16-Aug-04  
www.vishay.com  
4
Si7439DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.05  
0.02  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 73106  
S-41526—Rev. A, 16-Aug-04  
www.vishay.com  
5

SI7439DP-T1-E3 相关器件

型号 制造商 描述 价格 文档
SI7439DP-T1-GE3 VISHAY Trans MOSFET P-CH 150V 3A 8-Pin PowerPAK SO T/R 获取价格
SI7439DP_05 VISHAY P-Channel 150-V (D-S) MOSFET 获取价格
SI7440DP VISHAY N-Channel 30-V (D-S) Fast Switching MOSFET 获取价格
SI7440DP-E3 VISHAY TRANSISTOR 12 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 获取价格
SI7440DP-T1 VISHAY N-Channel 30-V (D-S) Fast Switching MOSFET 获取价格
SI7440DP-T1-E3 VISHAY Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK SO T/R 获取价格
SI7442DP VISHAY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 获取价格
SI7442DP-E3 VISHAY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 获取价格
SI7442DP-T1-E3 VISHAY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 获取价格
SI7444DP-T1-E3 VISHAY TRANSISTOR 14 A, 40 V, 0.0061 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power 获取价格

SI7439DP-T1-E3 相关文章

  • 小米 AI 眼镜技术亮点：双芯架构助力智能穿戴跨越发展
    2025-07-11
    21
  • AI 芯片风云：台积电能否超越英伟达成新霸主？
    2025-07-11
    20
  • 锁存型霍尔 IC：原理、应用大揭秘
    2025-07-11
    20
  • HBM 角逐：定制化、混合键合等技术成竞争关键
    2025-07-11
    18

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286