SI7439DP-T1-E3 概述
P-Channel 150-V (D-S) MOSFET P沟道150 -V (D -S )的MOSFET
SI7439DP-T1-E3 数据手册
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PDF下载Si7439DP
Vishay Siliconix
New Product
P-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
VDS (V)
rDS(on) (W)
ID (A)
D Ultra-Low On-Resistance Critical for Application
D Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
0.090 @ V = −10 V
−5.2
−5.0
GS
−150
0.095 @ V = −6 V
GS
D 100% Rg and Avalanche Tested
APPLICATIONS
D Active Clamp in Intermediate DC/DC Power
Supplies
PowerPAK SO-8
S
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
Bottom View
Ordering Information: Si7439DP-T1—E3
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−150
DS
V
V
GS
"20
T
= 25_C
= 70_C
−3.0
−2.4
−5.2
−4.1
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
−50
DM
a
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
−4.2
−1.6
S
I
AS
−40
L = 0.1 mH
E
AS
80
mJ
T
= 25_C
= 70_C
5.4
3.4
1.9
1.2
A
a
Maximum Power Dissipation
P
D
W
T
A
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
18
50
23
65
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Case (Drain)
Notes
1.0
1.5
thJC
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
www.vishay.com
1
Si7439DP
New Product
Vishay Siliconix
a. Surface Mounted on 1” x 1” FR4 Board.
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−2.0
−4.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= −150 V, V = 0 V
−1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −150 V, V = 0 V, T = 70_C
−10
GS
J
a
On-State Drain Current
I
V
DS
= −10 V, V = −10 V
−30
A
D(on)
GS
V
= −10 V, I = −5.2 A
0.073
0.077
0.090
0.095
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −6 V, I = −5.0 A
GS
D
a
Forward Transconductance
g
19
S
V
V
= −15 V, I = −5.2 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
= −4.2 A, V = 0 V
−0.78
−1.2
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
88
135
g
Q
Q
V
DS
= −75 V, V = −10 V, I = −5.2 A
17.5
26.5
nC
gs
gd
GS
D
Gate Resistance
R
g
1.5
3
4.5
W
Turn-On Delay Time
Rise Time
t
25
46
40
70
d(on)
t
r
V
= −75 V, R = 15.5 W
L
DD
I
D
^ −4.8 A, V
= −10 V, R = 6 W
GEN g
Turn-Off Delay Time
Fall Time
t
115
64
180
100
150
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I
= −2.9 A, di/dt = 100 A/ms
100
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
40
30
20
10
0
40
V
GS
= 10 thru 5 V
35
30
25
20
15
10
5
T
= 125_C
25_C
C
4 V
−55_C
0
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
www.vishay.com
2
Si7439DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
6000
5000
4000
3000
2000
1000
0
0.15
0.12
C
iss
0.09
0.06
0.03
0.00
V
GS
= 6 V
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
0
30
60
90
120
150
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.2
1.9
1.6
1.3
1.0
0.7
0.4
V
D
= 75 V
V
GS
= 10 V
DS
I
= 5.2 A
I = 5.2 A
D
6
4
2
0
0
15
Q
30
45
60
75
90
−50 −25
0
25
50
75
100 125 150
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistancevs. Gate-to-Source Voltage
0.20
0.16
0.12
0.08
0.04
0.00
40
10
T
= 150_C
J
I
D
= 5.2 A
T
= 25_C
J
1
0.1
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
www.vishay.com
3
Si7439DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
1.3
200
160
1.0
I
D
= 250 mA
0.7
0.4
120
80
0.1
40
0
−0.2
−0.5
−50 −25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
Limited by
r
DS(on)
10
1
10 ms
100 ms
T
= 25_C
C
0.1
1 s
Single Pulse
10 s
dc
0.01
0.1
1
10
100
1000
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 50_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
www.vishay.com
4
Si7439DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
www.vishay.com
5
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