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SI7440DP

更新时间：2025-07-09 02:17:26
品牌：VISHAY
描述：N-Channel 30-V (D-S) Fast Switching MOSFET

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免费 PCB/SMT

SI7440DP 概述

N-Channel 30-V (D-S) Fast Switching MOSFET N通道30 -V （D -S ）快速开关MOSFET 功率场效应晶体管

SI7440DP 规格参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOT
包装说明：SMALL OUTLINE, R-XDSO-C5针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.91外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：12 A最大漏源导通电阻：0.0065 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XDSO-C5
JESD-609代码：e0元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：60 A认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SI7440DP 数据手册

通过下载SI7440DP数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7440DP  
Vishay Siliconix  
N-Channel 30-V (D-S) Fast Switching MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D New Low Thermal Resistance PowerPAKr  
Package with Low 1.07-mm Profile  
D 100% Rg Tested  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.0065 @ V = 10 V  
21  
19  
GS  
30  
0.008 @ V = 4.5 V  
GS  
APPLICATIONS  
D DC/DC Converters  
D Optimized for “Low-Side” Synchronous  
Rectifier Operation  
PowerPAK SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET  
Bottom View  
Ordering Information: Si7440DP-T1  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
21  
17  
12  
9
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
60  
DM  
a
Continuous Source Current (Diode Conduction)  
I
4.3  
5.4  
3.4  
1.6  
1.9  
1.2  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
18  
52  
23  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.0  
1.3  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71623  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
1
 
Si7440DP  
Vishay Siliconix  
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1.0  
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
"100  
nA  
DS  
GSS  
V
= 24 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 55_C  
DS  
GS  
J
NO TAG  
On-State Drain Current  
I
40  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0053  
0.0065  
0.008  
V
= 10 V, I = 21 A  
D
GS  
NO TAG  
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 19 A  
0.0065  
65  
GS  
DS  
D
NO TAG  
Forward Transconductance  
g
fs  
V
= 15 V, I = 21 A  
S
V
D
NO TAG  
Diode Forward Voltage  
V
I
S
= 4.3 A, V = 0 V  
0.72  
1.2  
35  
SD  
GS  
DynamicNO TAG  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate-Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
29.0  
10.5  
10.0  
1.4  
18  
Q
gs  
Q
gd  
V
= 15 V, V = 4.5 V, I = 21 A  
nC  
DS  
GS  
D
R
g
0.5  
2.2  
28  
W
t
d(on)  
t
r
16  
25  
V
= 15 V, R = 15 W  
L
DD  
I
D
^ 1 A, V = 10 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
75  
180  
65  
ns  
d(off)  
t
f
41  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 4.3 A, di/dt = 100 A/ms  
50  
80  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
60  
60  
50  
40  
30  
20  
10  
0
V
= 10 thru 4 V  
GS  
50  
40  
30  
20  
10  
0
3 V  
T
C
= 125_C  
25_C  
-55_C  
0
2
4
6
8
10  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 71623  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
2
Si7440DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.010  
5000  
4000  
3000  
2000  
1000  
0
C
iss  
0.008  
V
= 4.5 V  
GS  
0.006  
0.004  
0.002  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
10  
20  
30  
40  
50  
60  
0
4
8
12  
16  
20  
I
D
- Drain Current (A)  
V
- Drain-to-Source Voltage (V)  
DS  
Gate Charge  
On-Resistance vs. Junction Temperature  
6
5
4
3
2
1
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
V
= 10 V  
GS  
DS  
I
D
= 21  
A
I = 21 A  
D
0
8
16  
24  
32  
40  
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
g
- Total Gate Charge (nC)  
T
J
- Junction Temperature (_C)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.030  
0.024  
0.018  
0.012  
0.006  
0.000  
50  
I
D
= 21 A  
T = 150_C  
J
10  
T = 25_C  
J
1
0.0  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-to-Drain Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 71623  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
3
Si7440DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Juncion-To-Ambient  
0.4  
200  
160  
120  
I
D
= 250 mA  
0.2  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
80  
40  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
J
- Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 68_C/W  
thJA  
(t)  
Z
3. T  
- T = P  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71623  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
4

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