SI7440DP 概述
N-Channel 30-V (D-S) Fast Switching MOSFET N通道30 -V (D -S )快速开关MOSFET 功率场效应晶体管
SI7440DP 规格参数
是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-XDSO-C5 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.91 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 12 A | 最大漏源导通电阻: | 0.0065 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XDSO-C5 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
SI7440DP 数据手册
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PDF下载Si7440DP
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)
0.0065 @ V = 10 V
21
19
GS
30
0.008 @ V = 4.5 V
GS
APPLICATIONS
D DC/DC Converters
D Optimized for “Low-Side” Synchronous
Rectifier Operation
PowerPAK SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET
Bottom View
Ordering Information: Si7440DP-T1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
21
17
12
9
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current
I
60
DM
a
Continuous Source Current (Diode Conduction)
I
4.3
5.4
3.4
1.6
1.9
1.2
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
18
52
23
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.0
1.3
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71623
S-31728—Rev. B, 18-Aug-03
www.vishay.com
1
Si7440DP
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
"100
nA
DS
GSS
V
= 24 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 55_C
DS
GS
J
NO TAG
On-State Drain Current
I
40
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0053
0.0065
0.008
V
= 10 V, I = 21 A
D
GS
NO TAG
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 19 A
0.0065
65
GS
DS
D
NO TAG
Forward Transconductance
g
fs
V
= 15 V, I = 21 A
S
V
D
NO TAG
Diode Forward Voltage
V
I
S
= 4.3 A, V = 0 V
0.72
1.2
35
SD
GS
DynamicNO TAG
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Q
g
29.0
10.5
10.0
1.4
18
Q
gs
Q
gd
V
= 15 V, V = 4.5 V, I = 21 A
nC
DS
GS
D
R
g
0.5
2.2
28
W
t
d(on)
t
r
16
25
V
= 15 V, R = 15 W
L
DD
I
D
^ 1 A, V = 10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
75
180
65
ns
d(off)
t
f
41
Source-Drain Reverse Recovery Time
t
rr
I
F
= 4.3 A, di/dt = 100 A/ms
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 10 thru 4 V
GS
50
40
30
20
10
0
3 V
T
C
= 125_C
25_C
-55_C
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
Document Number: 71623
S-31728—Rev. B, 18-Aug-03
www.vishay.com
2
Si7440DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
5000
4000
3000
2000
1000
0
C
iss
0.008
V
= 4.5 V
GS
0.006
0.004
0.002
0.000
V
= 10 V
GS
C
oss
C
rss
0
10
20
30
40
50
60
0
4
8
12
16
20
I
D
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
V
= 10 V
GS
DS
I
D
= 21
A
I = 21 A
D
0
8
16
24
32
40
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.030
0.024
0.018
0.012
0.006
0.000
50
I
D
= 21 A
T = 150_C
J
10
T = 25_C
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
SD
Document Number: 71623
S-31728—Rev. B, 18-Aug-03
www.vishay.com
3
Si7440DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.4
200
160
120
I
D
= 250 mA
0.2
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
80
40
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 68_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71623
S-31728—Rev. B, 18-Aug-03
www.vishay.com
4
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