SI7444DP-T1-E3
更新时间：2024-11-30 19:12:50
品牌：VISHAY
描述：TRANSISTOR 14 A, 40 V, 0.0061 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power
概述
规格参数
数据手册SI7444DP-T1-E3 概述
TRANSISTOR 14 A, 40 V, 0.0061 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power 功率场效应晶体管
SI7444DP-T1-E3 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | 零件包装代码： | SOT |
| 包装说明： | SMALL OUTLINE, R-XDSO-C5 | 针数： | 8 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 5.84 | 雪崩能效等级（Eas）： | 100 mJ |
| 外壳连接： | DRAIN | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 40 V | 最大漏极电流 (Abs) (ID)： | 14 A |
| 最大漏极电流 (ID)： | 14 A | 最大漏源导通电阻： | 0.0061 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码： | R-XDSO-C5 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 5 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | UNSPECIFIED | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 5.4 W |
| 最大脉冲漏极电流 (IDM)： | 60 A | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) | 端子形式： | C BEND |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 40 |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
SI7444DP-T1-E3 数据手册
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PDF下载Si7444DP
Vishay Siliconix
N-Channel 40-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
0.0061 at VGS = 10 V
40
23.6
105
•
•
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
•
100 % Rg Tested
• High Threshold Voltage at High Temperature
PowerPAK SO-8
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
D
8
D
7
D
6
D
G
5
Bottom View
S
Ordering Information:
Si7444DP-T1-E3 (Lead (Pb)-free)
Si7444DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
40
60
V
VGS
20
TA = 25 °C
A = 70 °C
23.6
18.9
14
Continuous Drain Current (TJ = 150 °C)a
ID
T
11.2
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
IDM
IS
A
4.5
1.6
IAS
EAS
45
Avalanche Energy
100
mJ
W
TA = 25 °C
TA = 70 °C
5.4
3.4
1.9
1.2
Maximum Power Dissipationa
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
18
Maximum
Unit
t ≤ 10 s
Steady State
Steady State
23
65
Maximum Junction-to-Ambienta
RthJA
52
°C/W
RthJC
Maximum Junction-to-Case (Drain)
1.0
1.3
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
www.vishay.com
1
Si7444DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
3.4
4.5
100
1
V
VDS = 0 V, VGS
=
20 V
nA
VDS = 40 V, VGS = 0 V
DS = 40 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Currenta
ID(on)
RDS(on)
gfs
40
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
VGS = 10 V, ID = 23.6 A
VDS = 15 V, ID = 23.6 A
IS = 4.5 A, VGS = 0 V
0.005
56
0.0061
1.2
Ω
S
V
VSD
0.76
Dynamicb
Total Gate Charge
Qg
Qgs
Qgd
Rg
105
39.4
21.7
1.0
45
160
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = 20 V, VGS = 10 V, ID = 23.6 A
f = 1 MHz
nC
0.5
1.5
70
Ω
td(on)
tr
td(off)
tf
30
45
V
DD = 20 V, RL = 20 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
90
135
70
ns
45
Source-Drain Reverse Recovery Time
Notes:
trr
IF = 4.5 A, dI/dt = 100 A/µs
45
70
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V thru 6 V
GS
T
= 125 °C
25 °C
C
5 V
- 55 °C
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
-
3
4
5
7
V
-
Drain-to-Source Voltage (V)
V
Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
Si7444DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.010
10000
8000
6000
4000
2000
0
0.008
0.006
C
iss
V
= 10 V
GS
0.004
0.002
0.000
C
oss
C
rss
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
40
I
D
-
Drain Current (A)
V
-
Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 20 V
V
= 10 V
GS
DS
I
D
= 23.6
A
I = 23.6 A
D
8
6
4
2
0
0
20
40
60
80
100
120
-50 -25
0
25
50
75
100 125 150
Q - Total Gate Charge (nC)
g
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
60
10
T = 150 °C
J
I
D
= 23.6 A
= 25 °C
T
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
GS - Gate-to-Source Voltage (V)
V
-
Source-to-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
www.vishay.com
3
Si7444DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
0.4
100
80
I
D
= 250 μA
0.2
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 1.2
- 1.4
60
40
20
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T - Temperature (˚C)
J
Threshold Voltage
Time (s)
Single Pulse Power, Junction-to-Ambient
I
DM
100
Limited
Limited by R
*
DS(on)
10
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
1
P(t) = 0.1
P(t) = 1
T
A
= 25°C
P(t) = 10
DC
0.1
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
V
- Drain-to-Source Voltage (V)
DS
* V > minimum V at which R is specified
GS
GS
DS(on)
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 52 °C/W
thJA
(t)
Z
3. T
-
T
= P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
10
-3
10
-2
10
-1
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
Si7444DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
10
-3
10
-2
10
-1
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72920.
Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
www.vishay.com
5
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
SI7444DP-T1-E3 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7445DP | VISHAY | P-Channel 20-V (D-S) MOSFET | 获取价格 |
|
| SI7445DP-E3 | VISHAY | Transistor, | 获取价格 |
|
| SI7446BDP-T1 | VISHAY | TRANSISTOR 12 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
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| SI7446BDP-T1-E3 | VISHAY | 12A, 30V, 0.0075ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8 | 获取价格 |
|
| SI7446BDP-T1-GE3 | VISHAY | 12A, 30V, 0.0075ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | 获取价格 |
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| SI7446DP | VISHAY | SPICE Device Model Si7446DP | 获取价格 |
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| SI7446DP-T1 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
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| SI7446DP-T1-GE3 | VISHAY | TRANSISTOR 12 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
|
| SI7447ADP | VISHAY | P-Channel 30-V (D-S) MOSFET | 获取价格 |
|
| SI7447ADP-T1-E3 | VISHAY | TRANSISTOR 21.5 A, 30 V, 0.0065 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
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