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SI7806BDN-T1-E3

更新时间：2025-07-09 07:53:41
品牌：VISHAY
描述：N-Channel 30-V (D-S) Fast Switching MOSFET

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SI7806BDN-T1-E3 概述

N-Channel 30-V (D-S) Fast Switching MOSFET N通道30 -V （D -S ）快速开关MOSFET 功率场效应晶体管

SI7806BDN-T1-E3 规格参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.82Is Samacsys：N
配置：Single最大漏极电流 (Abs) (ID)：8 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：3.8 W子类别：FET General Purpose Power
表面贴装：YESBase Number Matches：1

SI7806BDN-T1-E3 数据手册

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Si7806BDN  
Vishay Siliconix  
New Product  
N-Channel 30-V (D-S) Fast Switching MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
•
•
TrenchFET® Power MOSFETS  
PWM Optimized  
VDS (V)  
rDS(on) (Ω)  
ID (A)  
12.6  
10.6  
0.0145 at VGS = 10 V  
0.0205 at VGS = 4.5 V  
New Low Thermal Resistance PowerPAK®  
Package with Low 1.07 mm Profile  
RoHS  
COMPLIANT  
30  
APPLICATIONS  
•
DC/DC Converters  
- Secondary Synchronous Rectifier  
- High-Side MOSFET in Synchronous Buck  
PowerPAK 1212-8  
S
3.30 mm  
3.30 mm  
1
D
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View  
Ordering Information: Si7806BDN-T1-E3 (Lead (Pb)-free)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C unless otherwise noted  
A
Symbol  
10 secs  
Steady State  
Unit  
Parameter  
VDS  
VGS  
30  
40  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
TA = 25 °C  
TA = 70 °C  
12.6  
10.1  
8.0  
6.4  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
3.2  
3.8  
2.0  
1.3  
1.5  
0.8  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
TJ, Tstg  
- 55 to 150  
°C  
Operating Junction and Storage Temperature Range  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
24  
Maximum  
Unit  
t ≤ 10 sec  
Steady State  
Steady State  
33  
81  
Maximum Junction-to-Ambienta  
65  
°C/W  
RthJC  
1.9  
2.4  
Maximum Junction-to-Case (Drain)  
Notes:  
a. Surface Mounted on 1" x 1" FR4 Board.  
Document Number: 73081  
S-60790-Rev. B, 08-May-06  
www.vishay.com  
1
Si7806BDN  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
Static  
VGS(th)  
IGSS  
VDS = VGS, ID = 250 µA  
1.0  
3
V
Gate Threshold Voltage  
Gate-Body Leakage  
VDS = 0 V, VGS  
=
20 V  
100  
1
nA  
VDS = 30 V, VGS = 0 V  
DS = 30 V, VGS = 0 V, TJ = 55 °C  
VDS ≥ 5 V, VGS = 10 V  
IDSS  
ID(on)  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
V
5
40  
VGS = 10 V, ID = 12.6 A  
VGS = 4.5 V, ID = 10.6 A  
VDS = 15 V, ID = 12.6 A  
IS = 3.2 A, VGS = 0 V  
0.012  
0.017  
34  
0.0145  
0.0205  
Drain-Source On-State Resistancea  
rDS(on)  
Ω
Forward Transconductancea  
Diode Forward Voltagea  
Dynamicb  
gfs  
S
V
VSD  
0.77  
1.2  
Qg  
Qgt  
Qgs  
Qgd  
Rg  
VDS = 15 V, VGS = 4.5 V, ID = 12.6 A  
8.5  
19  
3.6  
3.0  
2
11  
24  
Total Gate Charge  
nC  
V
DS = 15 V, VGS = 10 V, ID = 12.6 A  
f = 10 MHz  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Ω
td(on)  
tr  
td(off)  
tf  
8
15  
20  
40  
20  
70  
Turn-On Delay Time  
Rise Time  
12  
25  
10  
35  
VDD = 15 V, RL = 15 Ω  
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω  
Turn-Off Delay Time  
Fall Time  
ns  
trr  
IF = 3.2 A, di/dt = 100 A/µs  
Source-Drain Reverse Recovery Time  
Notes:  
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS 25 °C unless noted  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
V
GS  
= 10 thru 5 V  
4 V  
T
= 125 °C  
C
25 °C  
3 V  
- 55 °C  
4
0
0
0
1
2
3
4
5
0
1
2
3
5
V
DS  
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
www.vishay.com  
2
Document Number: 73081  
S-60790-Rev. B, 08-May-06  
Si7806BDN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C unless noted  
1400  
1200  
1000  
800  
600  
400  
200  
0
0.040  
0.035  
0.030  
0.025  
C
iss  
V
GS  
= 4.5 V  
0.020  
0.015  
0.010  
0.005  
0.000  
V
GS  
= 10 V  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
I
D
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
10  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 15 V  
V
D
= 10 V  
DS  
= 12.6  
GS  
I
A
I = 12.6 A  
6
4
2
0
0
4
8
12  
16  
20  
- 50 - 25  
0
25  
50  
75  
100 125 150  
Q
− Total Gate Charge (nC)  
T − Junction Temperature (°C)  
J
g
Gate Charge  
On-Resistance vs. Junction Temperature  
0.030  
0.025  
0.020  
0.015  
0.010  
0.005  
0.000  
50  
10  
I
D
= 12.6 A  
I
D
= 2 A  
T
= 150 °C  
J
T
= 25 °C  
J
1
0
2
4
6
8
10  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
Document Number: 73081  
S-60790-Rev. B, 08-May-06  
www.vishay.com  
3
Si7806BDN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C unless noted  
0.6  
50  
40  
30  
0.4  
0.2  
I
D
= 250 µA  
0.0  
- 0.2  
- 0.4  
- 0.6  
- 0.8  
- 1.0  
20  
10  
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
600  
Time (sec)  
T
− Temperature (°C)  
J
Single Pulse Power, Junction-to-Ambient  
Threshold Voltage  
100  
r
Limited  
I
Limited  
DS(on)  
DM  
P(t) = 0.0001  
10  
1
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
P(t) = 10  
dc  
T
= 25 °C  
A
0.1  
Single Pulse  
BV  
DSS  
Limited  
10  
0.01  
0.1  
1
100  
V
DS  
− Drain-to-Source Voltage (V)  
Safe Operating Area  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 65 °C/W  
thJA  
(t)  
3. T − T = P  
Z
JM DM thJA  
A
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
www.vishay.com  
4
Document Number: 73081  
S-60790-Rev. B, 08-May-06  
Si7806BDN  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C unless noted  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.05  
0.02  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Normalized Thermal Transient Impedance, Junction-to-Case  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?73081.  
Document Number: 73081  
S-60790-Rev. B, 08-May-06  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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