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SI7844DP

更新时间：2025-06-28 02:10:26
品牌：VISHAY
描述：Dual N-Channel 30-V (D-S) MOSFET

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免费 PCB/SMT

SI7844DP 概述

Dual N-Channel 30-V (D-S) MOSFET 双N通道30 -V （D -S ）的MOSFET 其他晶体管

SI7844DP 规格参数

是否无铅： 含铅生命周期：Transferred
包装说明：,针数：8
Reach Compliance Code：unknown风险等级：5.57
Base Number Matches：1

SI7844DP 数据手册

通过下载SI7844DP数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7844DP  
Vishay Siliconix  
New Product  
Dual N-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.022 @ V = 10 V  
10  
GS  
30  
0.030 @ V = 4.5 V  
GS  
8.5  
D
1
D
1
D
2
D
2
PowerPAKt  
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
3
G
1
G2  
4
G
2
D1  
8
D1  
7
D2  
6
D2  
5
S
1
S
2
Bottom View  
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
10  
6.4  
5.1  
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
8.0  
A
Pulsed Drain Current  
I
20  
DM  
a
Continuous Source Current (Diode Conduction)  
I
2.9  
3.5  
2.2  
1.1  
1.4  
0.9  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
26  
60  
35  
85  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
3.9  
5.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71328  
S-02456—Rev. A, 06-Nov-00  
www.vishay.com  
1
Si7844DP  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
0.8  
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
"100  
nA  
DS  
GSS  
V
= 24 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 55_C  
DS  
GS  
J
a
On-State Drain Current  
I
20  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.018  
0.022  
0.030  
V
= 10 V, I = 10 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 8.5 A  
0.024  
22  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 10 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
I
S
= 2.9 A, V = 0 V  
0.75  
1.2  
20  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
g
13  
2
Q
gs  
Q
gd  
V
= 15 V, V = 10 V, I = 10 A  
nC  
ns  
DS  
GS  
D
2.7  
8
t
16  
20  
40  
20  
80  
d(on)  
t
r
10  
21  
10  
40  
V
= 15 V, R = 15 W  
L
= 10 V, R = 6 W  
GEN G  
DD  
I
D
^ 1 A, V  
Turn-Off Delay Time  
Fall Time  
t
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 2.9 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
20  
20  
16  
12  
8
3 V  
V
= 10 thru 4 V  
16  
GS  
12  
8
T
C
= 125_C  
4
4
25_C  
2 V  
–55_C  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
– Drain-to-Source Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 71328  
S-02456—Rev. A, 06-Nov-00  
www.vishay.com  
2
Si7844DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.040  
1000  
800  
600  
400  
200  
0
0.032  
C
iss  
V
= 4.5 V  
GS  
0.024  
0.016  
0.008  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
4
8
12  
16  
20  
15  
1.2  
0
6
12  
18  
24  
30  
I
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
D
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 10 A  
V
D
= 10 V  
GS  
I = 10 A  
DS  
I
D
6
4
2
0
0
3
6
9
12  
–50 –25  
0
25  
50  
75  
100 125 150  
Q
g
– Total Gate Charge (nC)  
T – Junction Temperature (_C)  
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.04  
0.03  
0.02  
0.01  
0.00  
20  
10  
T = 150_C  
J
I
D
= 10 A  
T = 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
V
– Source-to-Drain Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 71328  
S-02456—Rev. A, 06-Nov-00  
www.vishay.com  
3
Si7844DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.4  
100  
80  
0.2  
I
D
= 250 mA  
–0.0  
–0.2  
–0.4  
–0.6  
–0.8  
60  
40  
20  
0
–50 –25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
1
10  
0.1  
T – Temperature (_C)  
J
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 60_C/W  
thJA  
(t)  
Z
3. T – T = P  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
–5  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
10  
1
Square Wave Pulse Duration (sec)  
Document Number: 71328  
S-02456—Rev. A, 06-Nov-00  
www.vishay.com  
4

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