概述
规格参数
数据手册SI7844DP 概述
Dual N-Channel 30-V (D-S) MOSFET 双N通道30 -V （D -S ）的MOSFET 其他晶体管
SI7844DP 规格参数
| 是否无铅： | 含铅 | 生命周期： | Transferred |
| 包装说明： | , | 针数： | 8 |
| Reach Compliance Code： | unknown | 风险等级： | 5.57 |
| Base Number Matches： | 1 |
SI7844DP 数据手册
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PDF下载Si7844DP
Vishay Siliconix
New Product
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.022 @ V = 10 V
10
GS
30
0.030 @ V = 4.5 V
GS
8.5
D
1
D
1
D
2
D
2
PowerPAKt
S1
5.15 mm
6.15 mm
1
G1
2
S2
3
G
1
G2
4
G
2
D1
8
D1
7
D2
6
D2
5
S
1
S
2
Bottom View
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
10
6.4
5.1
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
8.0
A
Pulsed Drain Current
I
20
DM
a
Continuous Source Current (Diode Conduction)
I
2.9
3.5
2.2
1.1
1.4
0.9
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
26
60
35
85
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
3.9
5.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71328
S-02456—Rev. A, 06-Nov-00
www.vishay.com
1
Si7844DP
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.8
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
"100
nA
DS
GSS
V
= 24 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 55_C
DS
GS
J
a
On-State Drain Current
I
20
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.018
0.022
0.030
V
= 10 V, I = 10 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 8.5 A
0.024
22
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 10 A
S
V
DS
D
a
Diode Forward Voltage
V
I
S
= 2.9 A, V = 0 V
0.75
1.2
20
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
g
13
2
Q
gs
Q
gd
V
= 15 V, V = 10 V, I = 10 A
nC
ns
DS
GS
D
2.7
8
t
16
20
40
20
80
d(on)
t
r
10
21
10
40
V
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
DD
I
D
^ 1 A, V
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.9 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
3 V
V
= 10 thru 4 V
16
GS
12
8
T
C
= 125_C
4
4
25_C
2 V
–55_C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
Document Number: 71328
S-02456—Rev. A, 06-Nov-00
www.vishay.com
2
Si7844DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.040
1000
800
600
400
200
0
0.032
C
iss
V
= 4.5 V
GS
0.024
0.016
0.008
0.000
V
= 10 V
GS
C
oss
C
rss
0
4
8
12
16
20
15
1.2
0
6
12
18
24
30
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
D
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 10 A
V
D
= 10 V
GS
I = 10 A
DS
I
D
6
4
2
0
0
3
6
9
12
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.04
0.03
0.02
0.01
0.00
20
10
T = 150_C
J
I
D
= 10 A
T = 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
SD
Document Number: 71328
S-02456—Rev. A, 06-Nov-00
www.vishay.com
3
Si7844DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
100
80
0.2
I
D
= 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
60
40
20
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
1
10
0.1
T – Temperature (_C)
J
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 60_C/W
thJA
(t)
Z
3. T – T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
10
1
Square Wave Pulse Duration (sec)
Document Number: 71328
S-02456—Rev. A, 06-Nov-00
www.vishay.com
4
SI7844DP 相关器件
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| SI7844DP-T1-E3 | VISHAY | Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R | 获取价格 |
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| SI7846DP-T1 | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
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| SI7846DP-T1-E3 | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
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| SI7846DP-T1-GE3 | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
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| SI7848BDP | VISHAY | N-Channel 40-V (D-S) MOSFET | 获取价格 |
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| SI7848BDP-T1-E3 | VISHAY | N-Channel 40-V (D-S) MOSFET | 获取价格 |
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