首页 > SI7856DP-E3

SI7856DP-E3

更新时间：2025-07-01 14:18:32
品牌：VISHAY
描述：Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

PDF下载

中文翻译

免费 PCB/SMT

SI7856DP-E3 概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 功率场效应晶体管

SI7856DP-E3 规格参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliant风险等级：5.84
配置：Single最大漏极电流 (Abs) (ID)：14 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e3
湿度敏感等级：1工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：5.4 W子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
Base Number Matches：1

SI7856DP-E3 数据手册

通过下载SI7856DP-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Si7856DP  
Vishay Siliconix  
New Product  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D Optimized for “Low Side” Synchronous  
Rectifier Operation  
D New Low Thermal Resistance PowerPAKt  
Package with Low 1.07-mm Profile  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.0045 @ V = 10 V  
25  
23  
GS  
30  
0.0055 @ V = 4.5 V  
GS  
APPLICATIONS  
D DC/DC Converters  
D Synchronous Rectifiers  
PowerPAKt SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
S
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
25  
19  
14  
11  
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
60  
DM  
a
Continuous Source Current (Diode Conduction)  
I
4.5  
5.4  
3.4  
1.6  
1.9  
1.2  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
18  
50  
23  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.0  
1.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71850  
S-20351—Rev. A, 18-Apr-02  
www.vishay.com  
1
Si7856DP  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1.0  
1.95  
3.0  
"100  
1
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
nA  
DS  
GSS  
V
= 24 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 55_C  
5
DS  
GS  
J
a
On-State Drain Current  
I
30  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0035  
0.0045  
0.0055  
V
= 10 V, I = 25 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 19 A  
0.0043  
95  
GS  
DS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 25 A  
S
V
D
a
Diode Forward Voltage  
V
I
S
= 2.9 A, V = 0 V  
0.72  
1.1  
50  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
34  
15  
Q
gs  
Q
gd  
V
= 15 V, V = 4.5 V, I = 25 A  
nC  
DS  
GS  
D
10  
R
G
1.3  
21  
W
t
t
35  
25  
d(on)  
t
r
15  
V
= 15 V, R = 15 W  
L
= 10 V, R = 6 W  
GEN G  
DD  
I
^ 1 A, V  
D
Turn-Off Delay Time  
Fall Time  
100  
30  
150  
45  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 2.9 A, di/dt = 100 A/ms  
50  
80  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
60  
60  
50  
40  
30  
20  
10  
0
V
= 10 thru 4 V  
GS  
50  
40  
30  
20  
10  
0
3 V  
T
C
= 125_C  
25_C  
–55_C  
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
V
– Drain-to-Source Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 71850  
S-20351—Rev. A, 18-Apr-02  
www.vishay.com  
2
Si7856DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.010  
7000  
5600  
4200  
2800  
1400  
0
C
iss  
0.008  
0.006  
V
= 4.5 V  
GS  
0.004  
0.002  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
10  
20  
30  
40  
50  
0
6
12  
18  
24  
30  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
6
5
4
3
2
1
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 20 A  
V
= 10 V  
GS  
DS  
I
D
I = 20 A  
D
0
10  
20  
30  
40  
50  
–50 –25  
0
25  
50  
75  
100 125 150  
T – Junction Temperature (_C)  
J
Q
g
– Total Gate Charge (nC)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.020  
0.016  
0.012  
0.008  
0.004  
0.000  
50  
T = 150_C  
J
I
D
= 20 A  
10  
T = 25_C  
J
1
0.00  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
– Source-to-Drain Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 71850  
S-20351—Rev. A, 18-Apr-02  
www.vishay.com  
3
Si7856DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.6  
200  
160  
I
D
= 250 mA  
0.4  
0.2  
120  
80  
–0.0  
–0.2  
–0.4  
–0.6  
–0.8  
40  
0
–50 –25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T – Temperature (_C)  
J
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 50_C/W  
thJA  
(t)  
Z
3. T – T = P  
DM thJA  
JM  
A
Single Pulse  
10  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.02  
0.05  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71850  
S-20351—Rev. A, 18-Apr-02  
www.vishay.com  
4

SI7856DP-E3 相关器件

型号 制造商 描述 价格 文档
SI7856DP-T1 VISHAY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 获取价格
Si7858ADP VISHAY N-Channel 12-V (D-S) MOSFET 获取价格
SI7858ADP-T1-E3 VISHAY TRANSISTOR 20 A, 12 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power 获取价格
SI7858ADP-T1-GE3 VISHAY TRANSISTOR 20 A, 12 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power 获取价格
SI7858BDP VISHAY N-Channel 12 V (D-S) MOSFET 获取价格
SI7858BDP-T1-GE3 VISHAY N-Channel 12 V (D-S) MOSFET 获取价格
SI7858DP VISHAY N-Channel 12-V (D-S) MOSFET 获取价格
SI7858DP-E3 VISHAY TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 获取价格
SI7858DP-T1 VISHAY TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 获取价格
SI7858DP-T1-E3 VISHAY TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 获取价格

SI7856DP-E3 相关文章

  • 5V 过电压保护回路电路解析：复杂原理源于简单设计
    2025-07-04
    13
  • 先进封装：台积电、英特尔、三星等大厂的新战场
    2025-07-04
    21
  • 探秘台积电 SoW：从起源到应用的深度剖析
    2025-07-04
    14
  • 英特尔战略调整：舍弃 18A，全力进军 1.4nm 制程
    2025-07-04
    14

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 规格参数
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286