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SI7856DP-T1

更新时间：2024-10-13 15:08:26
品牌：VISHAY
描述：Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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SI7856DP-T1 概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 功率场效应晶体管

SI7856DP-T1 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.89
配置：Single最大漏极电流 (Abs) (ID)：14 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e0
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：5.4 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

SI7856DP-T1 数据手册

通过下载SI7856DP-T1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7856DP  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D Optimized for “Low Side” Synchronous  
Rectifier Operation  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKr  
Package with Low 1.07-mm Profile  
D 100% Rg Tested  
0.0045 @ V = 10 V  
25  
23  
GS  
30  
0.0055 @ V = 4.5 V  
GS  
APPLICATIONS  
D DC/DC Converters  
D Synchronous Rectifiers  
PowerPAK SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
S
5
N-Channel MOSFET  
Bottom View  
Ordering Information: Si7856DP-T1  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
25  
19  
14  
11  
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
60  
DM  
a
Continuous Source Current (Diode Conduction)  
I
4.5  
5.4  
3.4  
1.6  
1.9  
1.2  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
18  
50  
23  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.0  
1.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71850  
S-31727—Rev. B, 18-Aug-03  
www.vishay.com  
1
 
Si7856DP  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1.0  
1.95  
3.0  
"100  
1
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
nA  
DS  
GSS  
V
= 24 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 55_C  
5
DS  
GS  
J
a
On-State Drain Current  
I
30  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0035  
0.0045  
0.0055  
V
= 10 V, I = 25 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 19 A  
0.0043  
95  
GS  
DS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 25 A  
S
V
D
a
Diode Forward Voltage  
V
I
S
= 2.9 A, V = 0 V  
0.72  
1.1  
50  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
34  
15  
Q
gs  
Q
gd  
V
= 15 V, V = 4.5 V, I = 25 A  
nC  
DS  
GS  
D
10  
R
g
0.5  
1.3  
21  
2.0  
35  
W
t
d(on)  
t
r
15  
25  
V
= 15 V, R = 15 W  
L
DD  
I
D
^ 1 A, V = 10 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
100  
30  
150  
45  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 2.9 A, di/dt = 100 A/ms  
50  
80  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
60  
60  
50  
40  
30  
20  
10  
0
V
= 10 thru 4 V  
GS  
50  
40  
30  
20  
10  
0
3 V  
T
C
= 125_C  
25_C  
-55_C  
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 71850  
S-31727—Rev. B, 18-Aug-03  
www.vishay.com  
2
Si7856DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.010  
7000  
5600  
4200  
2800  
1400  
0
C
iss  
0.008  
0.006  
V
= 4.5 V  
GS  
0.004  
0.002  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
10  
20  
30  
40  
50  
0
6
12  
18  
24  
30  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
6
5
4
3
2
1
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 20 A  
V
= 10 V  
GS  
DS  
I
D
I = 20 A  
D
0
10  
20  
30  
40  
50  
-50  
-25  
0
J
25  
50  
75  
100 125 150  
T
- Junction Temperature (_C)  
Q
- Total Gate Charge (nC)  
g
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.020  
0.016  
0.012  
0.008  
0.004  
0.000  
50  
T = 150_C  
J
I
D
= 20 A  
10  
T = 25_C  
J
1
0.00  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-to-Drain Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 71850  
S-31727—Rev. B, 18-Aug-03  
www.vishay.com  
3
Si7856DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.6  
200  
160  
I
D
= 250 mA  
0.4  
0.2  
120  
80  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
40  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
J
- Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 50_C/W  
thJA  
(t)  
Z
3. T  
- T = P  
DM thJA  
JM  
A
Single Pulse  
10  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.02  
0.05  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71850  
S-31727—Rev. B, 18-Aug-03  
www.vishay.com  
4
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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