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AP93T08GP-HF [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP93T08GP-HF
型号： AP93T08GP-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总4页 (文件大小：56K)
中文：  中文翻译
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AP93T08GP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
80V  
4.6mΩ  
140A  
▼ Lower On-resistance  
▼ Fast Switching Characteristic  
G
▼ RoHS Compliant & Halogen-Free  
Description  
AP93T08 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for all commercial-industrial  
through hole applications. The low thermal resistance and low  
package cost contribute to the worldwide popular package.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
80  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25℃  
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current (Chip)  
Continuous Drain Current, VGS @ 10V3  
Continuous Drain Current, VGS @ 10V3  
140  
A
80  
A
80  
A
Pulsed Drain Current1  
320  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
156  
W
W
℃
℃
Total Power Dissipation  
2
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
0.8  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
201304171  
AP93T08GP-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
VGS(th)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=40A  
VGS=0V, ID=250uA  
80  
-
-
-
-
-
4.6  
5
V
mΩ  
V
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
2
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge  
VDS=10V, ID=40A  
VDS=64V, VGS=0V  
VGS= +20V, VDS=0V  
ID=40A  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60  
-
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
25  
-
+100  
Qg  
68  
23  
24  
23  
95  
40  
60  
109  
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
VDS=64V  
-
-
-
-
-
-
VGS=10V  
VDS=40V  
ID=40A  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
VGS=10V  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
4900 7840  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=25V  
1770  
1580  
3
-
-
f=1.0MHz  
f=1.0MHz  
6
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Test Conditions  
Min. Typ. Max. Units  
V
VSD  
trr  
IS=40A, VGS=0V  
IS=10A, VGS=0V  
dI/dt=100A/µs  
-
-
-
-
1.3  
ns  
Reverse Recovery Time  
Reverse Recovery Charge  
70  
-
-
nC  
Qrr  
120  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Package limitation current is 80A.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP93T08GP-HF  
320  
240  
160  
80  
200  
160  
120  
80  
T C = 150 o  
C
10V  
T C = 25 o  
C
10V  
9.0V  
8.0V  
9.0V  
8.0V  
7.0V  
7.0V  
V GS =6.0V  
V GS =6.0V  
40  
0
0
0
8
16  
24  
32  
0
4
8
12  
16  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
1.2  
1.1  
1
I D =40A  
I D =1mA  
V
G =10V  
0.9  
0.8  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
T
, Junction Temperature ( o C)  
T j , Junction Temperature ( o C)  
j
Fig 3. Normalized BVDSS v.s. Junction  
Temperature  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.6  
1.2  
0.8  
0.4  
0.0  
40  
30  
20  
10  
0
I D =1mA  
T j =150 o  
C
T j =25 o  
C
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP93T08GP-HF  
f=1.0MHz  
12  
8000  
6000  
4000  
2000  
0
I D = 40A  
V
DS = 64V  
10  
8
C iss  
6
4
C oss  
C rss  
2
0
1
5
9
13  
17  
21  
25  
29  
0
20  
40  
60  
80  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
1000  
Duty factor=0.5  
Operation in this  
area limited by  
RDS(ON)  
100  
10  
1
100us  
1ms  
0.2  
0.1  
0.1  
0.05  
PDM  
t
10ms  
100ms  
DC  
0.02  
T
0.01  
Duty factor = t/T  
T C =25 o  
C
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
0.1  
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
160  
120  
80  
40  
0
VG  
QG  
10V  
Limited by package  
QGS  
QGD  
Q
Charge  
25  
50  
75  
100  
125  
150  
T C , Case Temperature ( o C )  
Fig 11. Maximum Continuous Drain Current  
v.s. Case Temperature  
Fig 12. Gate Charge Waveform  
4

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