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AP9406MP [A-POWER]

TRANSISTOR 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8, FET General Purpose Power;
AP9406MP
型号： AP9406MP
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8, FET General Purpose Power

开关 脉冲 光电二极管 晶体管
文件： 总4页 (文件大小：69K)
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AP9406MP  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
D
D
▼ Low On-resistance  
18mΩ  
10.3A  
D
▼ Fast Switching Characteristic  
G
S
S
S
Exposed pad SO-8  
(Drain contact on the Backside)  
Description  
D
S
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The exposed pad SO-8 package provides the backside heat sink  
(Drain) to release thermal and reduce the package temperature and is  
good for low voltage applications such as high current DC/DC  
converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
10.3  
A
8.2  
A
50  
A
PD@TA=25℃  
Total Power Dissipation  
3
W
Linear Derating Factor  
0.02  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient3  
Max.  
Max.  
3.6  
42  
Rthj-a  
Data and specifications subject to change without notice  
201019041  
AP9406MP  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
0.02  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=9A  
VGS=4.5V, ID=7A  
V/℃  
mΩ  
RDS(ON)  
-
18  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=9A  
VDS=30V, VGS=0V  
VDS=24V, VGS=0V  
VGS=±20V  
3
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
15  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
1
j
Drain-Source Leakage Current (T=70oC)  
-
25  
j
IGSS  
±100  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
Qg  
ID=9A  
8
2
4
7
6
19  
7
13  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
VGS=4.5V  
-
VDS=15V  
-
ID=1A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=15Ω  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
620 1530  
VDS=25V  
230  
90  
-
-
-
f=1.0MHz  
f=1.0MHz  
3.2  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=2.5A, VGS=0V  
IS=9A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
24  
16  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse width <300us , duty cycle <2%.  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 115 ℃/W when mounted on Min. copper pad.  
AP9406MP  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
A = 150 o C  
10V  
7.0V  
5.0V  
4.5V  
T
10V  
7.0V  
5.0V  
4.5V  
T A = 25 o C  
V G = 3.0 V  
V G = 3.0 V  
0.0  
1.0  
2.0  
3.0  
4.0  
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
23  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D = 7 A  
I D = 9 A  
T
A =25 ℃  
V
G =10V  
20  
17  
14  
11  
Ω
Ω
Ω
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
V GS , Gate-to-Source Voltage (V)  
T j , Junction Temperature ( o C)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
9
6
3
0
2
1.5  
T j =150 o C  
T j =25 o C  
1
0.5  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
AP9406MP  
f=1.0MHz  
C iss  
15  
1000  
100  
10  
I
D = 9 A  
12  
V DS =1 6 V  
V
DS =20V  
DS =24V  
C oss  
9
V
C rss  
6
3
0
0
4
8
12  
16  
20  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
0.2  
100us  
10  
0.1  
0.1  
1ms  
10ms  
100ms  
1s  
0.05  
1
0.02  
0.01  
PDM  
Single Pulse  
0.01  
t
T
0.1  
T
A =25 o C  
Single Pulse  
Duty factor = t/T  
Peak Tj = PDM x Rthja + Ta  
DC  
Rthja=115℃/W  
0.001  
0.0001  
0.01  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
tr  
td(on)  
td(off)tf  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  

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