首页 |元器件品牌

AP9402GMT-HF [A-POWER]

Simple Drive Requirement, SO-8 Compatible with Heatsink; 简单的驱动要求， SO- 8兼容散热器
AP9402GMT-HF
型号： AP9402GMT-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement, SO-8 Compatible with Heatsink
简单的驱动要求， SO- 8兼容散热器

驱动
文件： 总4页 (文件大小：102K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AP9402GMT-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
D
S
▼ SO-8 Compatible with Heatsink  
▼ Low On-resistance  
18mΩ  
20.6A  
G
▼ RoHS Compliant & Halogen-Free  
D
D
D
Description  
D
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
The PMPAK® 5x6 package is special for DC-DC converters application  
and the foot print is compatible with SO-8 with backside heat sink and  
lower profile.  
S
S
S
G
PMPAK® 5x6  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
20.6  
13  
Continuous Drain Current (Chip), VGS @ 10V  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TA=25℃  
ID@TA=70℃  
IDM  
A
A
10.4  
80  
A
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
12.5  
5
W
W
℃
℃
Total Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
10  
25  
Rthj-a  
Data and specifications subject to change without notice  
1
201110071  
AP9402GMT-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=12A  
VGS=0V, ID=250uA  
30  
-
-
13  
21.6  
1.4  
17  
-
-
V
mΩ  
mΩ  
V
18  
VGS=4.5V, ID=8A  
-
30  
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge  
VDS=VGS, ID=250uA  
VDS=10V, ID=12A  
VDS=24V, VGS=0V  
VGS=+20V, VDS=0V  
ID=12A  
1
-
3
gfs  
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
10  
-
-
+100  
Qg  
-
6.5  
2
10.4  
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
VDS=15V  
-
-
VGS=4.5V  
-
3.8  
7
-
VDS=15V  
-
-
ID=1A  
-
6
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
-
17  
4
-
-
VGS=10V  
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
-
510  
110  
90  
1.8  
820  
-
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=15V  
-
f=1.0MHz  
-
-
f=1.0MHz  
-
3.6  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
IS=12A, VGS=0V  
IS=10A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
Reverse Recovery Time  
Reverse Recovery Charge  
20  
11  
-
-
ns  
nC  
Qrr  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9402GMT-HF  
60  
50  
40  
30  
20  
10  
0
80  
60  
40  
20  
0
C =25 o  
C
T C = 150 o  
C
10V  
7.0V  
6.0V  
10V  
T
7.0V  
6.0V  
5.0V  
5.0V  
V G = 4.0V  
V G = 4.0V  
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
30  
26  
22  
18  
14  
10  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D =12A  
I D = 8 A  
T
C =25 o  
C
V
G =10V  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
12  
10  
8
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
T j =150 o  
C
T j =25 o  
C
6
4
2
0
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9402GMT-HF  
f=1.0MHz  
800  
600  
400  
200  
0
10  
I D = 12 A  
V
DS =15V  
8
6
4
2
0
C iss  
C oss  
C rss  
0
0.1  
0
2
4
6
8
10  
12  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
100  
10  
1
Operation in this  
area limited by  
RDS(ON)  
Duty factor=0.5  
0.2  
100us  
0.1  
0.1  
0.05  
PDM  
1ms  
10ms  
100ms  
DC  
t
0.02  
T
0.01  
Duty factor = t/T  
T C =25 o  
Single Pulse  
C
Peak Tj = PDM x Rthjc + Tc  
Single Pulse  
0.01  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
1
10  
100  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
32  
50  
40  
30  
20  
10  
0
V
DS =5V  
24  
16  
8
T j =150 o  
C
T j =25 o  
C
T j =-40 o  
C
0
1
2
3
4
5
6
25  
50  
75  
100  
125  
150  
T C , Case Temperature ( o C )  
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Maximum Continuous Drain Current  
v.s. Case Temperature  
4

相关型号：

AP9402GYT-HF

 Simple Drive Requirement, Small Size & Lower Profile
A-POWER

AP9404GH-HF

 Lower Gate Charge, Fast Switching Characteristic
A-POWER

AP9404GM-HF

 Lower Gate Charge, Fast Switching Characteristic
A-POWER

AP9406MP

 TRANSISTOR 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8, FET General Purpose Power
A-POWER

AP9408AGH

 Lower Gate Charge, Simple Drive Requirement
A-POWER

AP9408AGI

 Fast Switching Performance, Full Isolation Package
A-POWER

AP9408AGM

 TRANSISTOR 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
A-POWER

AP9408AGM-HF

 Simple Drive Requirement, Fast Switching Characteristic
A-POWER

AP9408AGP

 Lower Gate Charge, Simple Drive Requirement
A-POWER

AP9408CGM-HF

 Lower Gate Charge, Simple Drive Requirement
A-POWER

AP9408GH

 Lower Gate Charge, Simple Drive Requirement
A-POWER

AP9408GH_14

 Simple Drive Requirement
A-POWER
©2020 ICPDF网 联系我们和版权申明