AP95T06GP-HF [A-POWER]
Fast Switching Characteristic;![AP95T06GP-HF](http://pdffile.icpdf.com/pdf2/p00334/img/icpdf/AP95T06GP-HF_2058136_icpdf.jpg)
型号: | AP95T06GP-HF |
厂家: | ![]() |
描述: | Fast Switching Characteristic |
文件: | 总5页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP95T06GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
60V
8.5mΩ
75A
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
Description
AP95T06 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP95T06GP) are available for low-profile
applications.
G
D
S
TO-263(S)
TO-220(P)
G
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
60
Gate-Source Voltage
Drain Current, VGS @ 10V3
+20
V
ID@TC=25℃
ID@TC=100℃
IDM
75
A
Drain Current, VGS @ 10V
Pulsed Drain Current1
66
A
260
A
PD@TC=25℃
Total Power Dissipation
138
W
Linear Derating Factor
Single Pulse Avalanche Energy4
1.11
W/℃
mJ
A
EAS
IAR
450
Avalanche Current
30
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)5
Maximum Thermal Resistance, Junction-ambient
0.9
40
62
Rthj-a
Rthj-a
Data and specifications subject to change without notice
1
201501154
AP95T06GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=1mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
60
-
-
0.05
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=4.5V, ID=20A
V/℃
mΩ
RDS(ON)
-
8.5
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
12
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=45A
VDS=60V, VGS=0V
3
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V
72
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
10
-
100
IGSS
Qg
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VGS=+20V, VDS=0V
ID=45A
-
+100
72
16
53
20
76
67
109
115
Qgs
Qgd
td(on)
tr
VDS=48V
-
-
-
-
-
-
VGS=4.5V
VDS=30V
ID=45A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
VGS=10V
pF
pF
pF
Ω
Ciss
Input Capacitance
VGS=0V
-
-
-
-
5700 9200
Coss
Crss
Rg
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
f=1.0MHz
f=1.0MHz
900
560
1.1
-
-
1.7
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
Min. Typ. Max. Units
V
VSD
trr
IS=45A, VGS=0V
IS=20A, VGS=0V
dI/dt=100A/µs
-
-
-
-
1.3
ns
Reverse Recovery Time
Reverse Recovery Charge
40
60
-
-
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A .
4.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
5.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95T06GS/P-HF
250
200
150
100
50
120
80
40
0
10V
10V
7.0 V
T C = 150 o
C
7.0 V
5.0V
4.5V
T C = 25 o
C
5.0V
4.5V
V G =3.0V
V G =3.0V
0
0
3
6
9
12
0
3
6
9
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
11
10
9
1.6
1.2
0.8
0.4
I D =45A
V G =10V
I D =20A
T C =25 o
C
8
7
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
0
T j =150 o
C
T j =25 o
C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95T06GS/P-HF
f=1.0MHz
10
10000
I D = 45 A
C iss
8
V DS = 30 V
V DS = 38 V
V DS = 48 V
6
1000
C oss
C rss
4
2
0
100
0
20
40
60
80
100
120
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
0.2
0.1
100us
1ms
0.1
0.05
PDM
0.02
t
10ms
0.01
T
Duty factor = t/T
Single Pulse
100ms
DC
T c =25 o
C
Peak Tj = PDM x Rthjc + TC
Single Pulse
1
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
130
104
78
52
26
0
VG
V DS =5V
T j =25 o
C
T j =150 o
C
QG
4.5V
QGD
QGS
Q
Charge
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP95T06GS/P-HF
MARKING INFORMATION
TO-263
Part Number
meet Rohs requirement
for low voltage MOSFET only
95T06GS
YWWSSS
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
TO-220
Part Number
meet Rohs requirement
for low voltage MOSFET only
95T06GP
YWWSSS
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
相关型号:
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AP95T06GS
TRANSISTOR 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
A-POWER
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