AP98T03GS-HF [A-POWER]
TRANSISTOR POWER, FET, FET General Purpose Power;
| 型号： | AP98T03GS-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | TRANSISTOR POWER, FET, FET General Purpose Power 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP98T03GP/S-HF
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
30V
2.8mΩ
200A
▼ Ultra-low On-resistance
▼ Fast Switching Characteristic
G
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G
TO-220(P)
TO-263(S)
D
S
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP98T03GP) are
available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
+20
200
125
800
156
1.25
V
ID@TC=25℃
ID@TC=100℃
IDM
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
A
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
0.8
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
40
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
Data and specifications subject to change without notice
1
201208174
AP98T03GP/S-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
VGS=0V, ID=250uA
30
-
-
-
-
-
2.8
4
V
mΩ
mΩ
V
GS=4.5V, ID=30A
-
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VGS= +20V, VDS=0V
ID=30A
0.8
-
75
-
2.5
V
gfs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
+100
Qg
71
9
115
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=24V
-
-
-
-
-
-
VGS=4.5V
41
14
78
74
136
VDS=15V
ID=30A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
VGS=10V
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
4960 7940
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
1210
1200
1
-
-
f=1.0MHz
f=1.0MHz
2
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
Min. Typ. Max. Units
V
VSD
trr
IS=40A, VGS=0V
IS=10A, VGS=0V
dI/dt=100A/µs
-
-
-
-
1.3
ns
Reverse Recovery Time
Reverse Recovery Charge
54
74
-
-
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 200A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP98T03GP/S-HF
300
250
200
150
100
50
150
120
90
60
30
0
T C = 25 o
C
C = 1 50 o
C
10 V
7.0 V
5.0 V
4.5 V
10V
7.0V
5.0V
T
4.5V
V G = 3.0 V
V G = 3.0 V
0
0
1
2
3
4
150
150
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.2
2.0
I D =30A
C =25 o C
I D =40A
V
G =10V
T
3
1.6
1.2
0.8
0.4
Ω
2.8
2.6
2.4
2.2
2
4
6
8
10
-50
0
50
100
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
30
20
10
0
1.6
1.2
0.8
0.4
0
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
T j ,Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP98T03GP/S-HF
f=1.0MHz
12
8000
6000
4000
2000
0
I D = 30 A
10
V DS = 15 V
V
DS = 18 V
8
6
4
2
0
C iss
V
DS = 24 V
C oss
C rss
0
20
40
60
80
100
120
140
160
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
0.2
100
10
1
100us
0.1
0.1
1ms
0.05
PDM
0.02
10ms
100ms
DC
t
T
0.01
T C =25 o C
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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