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AP9960GJ [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9960GJ
型号： AP9960GJ
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
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AP9960GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Simple Drive Requirement  
D
S
BVDSS  
RDS(ON)  
ID  
40V  
16mΩ  
42A  
▼ Low Gate Charge  
▼ Fast Switching  
G
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
TO-252(H)  
TO-251(J)  
S
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP9960GJ) are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
42  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
26  
A
195  
A
PD@TC=25℃  
Total Power Dissipation  
45  
W
Linear Derating Factor  
0.36  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
2.8  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
201007042  
AP9960GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
40  
-
-
0.032  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=10V, ID=20A  
GS=4.5V, ID=18A  
-
16  
V
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=150oC)  
Gate-Source Leakage  
Total Gate Charge2  
VDS=VGS, ID=250uA  
VDS=10V, ID=20A  
VDS=40V, VGS=0V  
VDS=32V ,VGS=0V  
VGS= ±20V  
ID=20A  
3
30  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
1
-
25  
IGSS  
Qg  
-
±100  
18  
6
-
-
-
-
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
VDS=20V  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
VGS=4.5V  
12  
9
VDS=20V  
Rise Time  
ID=20A  
110  
23  
10  
1500  
250  
180  
td(off)  
tf  
Turn-off Delay Time  
RG=3.3Ω,VGS=10V  
RD=1Ω  
Fall Time  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
VDS=25V  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
IS=45A, VGS=0V  
IS=20A, VGS=0V  
dI/dt = 100A/us  
-
-
-
-
1.3  
V
Reverse Recovery Time  
Reverse Recovery Charge  
22  
-
-
ns  
nC  
Qrr  
27.4  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
AP9960GH/J  
120  
80  
40  
0
200  
150  
100  
50  
10V  
8.0V  
T C =150 o C  
10V  
8.0V  
T C =25 o C  
6.0V  
6.0V  
V
G =4.0V  
V
G =4.0V  
0
0.0  
1.0  
2.0  
3.0  
4.0  
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
50  
40  
30  
20  
10  
0
1.8  
1.4  
1.0  
0.6  
I D =20A  
V G =10V  
I D =20A  
T
C =25 ℃  
Ω
Ω
Ω
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.5  
100  
10  
1
2.0  
1.5  
1.0  
0.5  
T j =150 o C  
T j =25 o C  
0
0.0  
0.4  
0.8  
1.2  
1.6  
-50  
25  
100  
175  
T j , Junction Temperature ( o C )  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
AP9960GH/J  
f=1.0MHz  
14  
10000  
1000  
100  
I D =20A  
12  
VDS =12V  
10  
8
VDS =16V  
VDS =20V  
C iss  
6
4
C oss  
C rss  
2
0
0
10  
20  
30  
40  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
VDS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
0.1  
10us  
0.05  
0.02  
100us  
1ms  
0.01  
0.01  
Single Pulse  
T c =25 o C  
PDM  
Duty factor = t/T  
t
Single Pulse  
T
Peak Tj = PDM x Rthjc + Tc  
10ms  
100ms  
1
0.001  
0.0001  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
1000  
VDS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
tr  
td(on)  
td(off)tf  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  

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