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AP9T16AGH-HF [A-POWER]

Lower Gate Charge, Capable of 2.5V Gate Drive; 更低的栅极电荷，有能力2.5V栅极驱动
AP9T16AGH-HF
型号： AP9T16AGH-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Lower Gate Charge, Capable of 2.5V Gate Drive
更低的栅极电荷，有能力2.5V栅极驱动

栅极 栅极驱动
文件： 总4页 (文件大小：71K)
中文：  中文翻译
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AP9T16AGH-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Lower Gate Charge  
D
S
BVDSS  
RDS(ON)  
ID  
20V  
▼ Capable of 2.5V Gate Drive  
▼ Fast Switching Characteristic  
▼ RoHS Compliant & Halogen-Free  
20mΩ  
19.5A  
G
Description  
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
TO-252(H)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications such  
as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
20  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+12  
V
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
19.5  
A
12.3  
A
80  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
Total Power Dissipation3  
12.5  
W
W
℃
℃
2
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
10  
Rthj-a  
62.5  
Data and specifications subject to change without notice  
1
201110071  
AP9T16AGH-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=4.5V, ID=12A  
VGS=0V, ID=250uA  
20  
-
-
-
-
-
V
20  
30  
mΩ  
mΩ  
VGS=2.5V, ID=10A  
-
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=5V, ID=12A  
VDS=16V, VGS=0V  
VGS=+12V, VDS=0V  
ID=12A  
0.3  
-
29  
-
1.2  
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
10  
IGSS  
Gate-Source Leakage  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
-
+100  
Qg  
16  
2.5  
6
25.6  
Qgs  
Qgd  
td(on)  
tr  
VDS=16V  
-
-
-
-
-
-
VGS=4.5V  
VDS=10V  
10  
50  
24  
8
ID=12A  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
VGS=5V  
Ciss  
Input Capacitance  
VGS=0V  
1300 2080  
Coss  
Crss  
Rg  
Output Capacitance  
VDS=20V  
f=1.0MHz  
f=1.0MHz  
-
-
130  
115  
1.3  
-
-
Reverse Transfer Capacitance  
Gate Resistance  
0.65  
2.6  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
IS=12A, VGS=0V  
IS=10A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
Reverse Recovery Time  
Reverse Recovery Charge  
22  
13  
-
-
ns  
nC  
Qrr  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9T16AGH-HF  
100  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
T C = 150 o C  
5.0V  
4.5V  
3.5V  
T C =25 o C  
5.0V  
4.5V  
3.5V  
2.5V  
2.5V  
V G =2.0V  
V G =2.0V  
0
2
4
6
8
10  
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.0  
1.6  
1.2  
0.8  
0.4  
24  
20  
16  
12  
8
I D =12A  
I D =10A  
V
G =4.5V  
T
C =25 ℃  
Ω
-50  
0
50  
100  
150  
0
2
4
6
8
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
20  
1.8  
1.2  
0.6  
0.0  
I D =250uA  
16  
12  
8
T j =150 o C  
T j =25 o C  
4
0
-50  
0
50  
100  
150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9T16AGH-HF  
f=1.0MHz  
C iss  
8
1600  
1200  
800  
400  
0
I D = 12 A  
V
DS =16V  
6
4
2
0
C oss  
C rss  
0
8
16  
24  
32  
1
5
9
13  
17  
21  
25  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
10us  
Operation in this  
area limited by  
RDS(ON)  
0.1  
100us  
0.05  
PDM  
0.02  
0.01  
t
1ms  
T
1
10ms  
100ms  
T C =25 o C  
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
DC  
Single Pulse  
0.01  
0.00001  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
t , Pulse Width (s)  
V DS , Drain-to-Source Voltage (V)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
50  
40  
30  
20  
10  
0
24  
20  
16  
12  
8
V DS =5V  
T j =150 o C  
T j =25 o C  
4
T j =-40 o  
C
0
0
1
2
3
4
25  
50  
75  
100  
125  
150  
T C , Case Temperature ( o C )  
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Maximum Continuous Drain Current  
v.s. Case Temperature  
4

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