AO8803 [AOS]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | AO8803 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO8803
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO8803 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product
AO8803 is Pb-free (meets ROHS & Sony 259
specifications). AO8803L is a Green Product ordering
option. AO8803 and AO8803L are electrically
identical.
VDS (V) = -12V
ID = -7 A (VGS = -4.5V)
RDS(ON) < 18mΩ (VGS = -4.5V)
RDS(ON) < 22mΩ (VGS = -2.5V)
RDS(ON) < 29mΩ (VGS = -1.8V)
ESD Rating: 4KV HBM
D1
D2
S2
TSSOP-8
Top View
D2
S2
S2
G2
1
2
3
4
8
7
6
5
D1
S1
S1
G1
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-12
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±8
-7
V
A
TA=25°C
TA=70°C
ID
-5.8
Pulsed Drain Current B
IDM
-20
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
0.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
73
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
96
125
75
Steady-State
Steady-State
RθJL
63
Alpha & Omega Semiconductor, Ltd.
AO8803
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-12
V
V
DS=-9.6V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
µA
µA
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
±1
±10
-1
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
-0.3
-20
-0.55
V
V
GS=-4.5V, VDS=-5V
GS=-4.5V, ID=-7A
A
15
19
18
23
22
29
mΩ
TJ=125°C
mΩ
mΩ
mΩ
S
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-6A
VGS=-1.8V, ID=-5A
VGS=-1.5V, ID=-1A
VDS=-5V, ID=-7A
IS=-1A,VGS=0V
18
22
28
gFS
VSD
IS
Forward Transconductance
34
Diode Forward Voltage
-0.78
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3960
910
757
6.9
4750
pF
pF
pF
Ω
VGS=0V, VDS=-6V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
8.5
44
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
36.6
3.4
10
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-6V, ID=-7A
15
V
GS=-4.5V, VDS=-6V, RL=0.86Ω,
GEN=3Ω
43
R
tD(off)
tf
158
95
trr
IF=-7A, dI/dt=100A/µs
IF=-7A, dI/dt=100A/µs
49
60
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
19.4
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : September 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
25
20
15
10
5
-8V
VDS=-5V
-3.0V
-1.5V
6
-2.0V
125°C
4
25°C
1.2
2
VGS=-1.0V
0
0
0
1
2
3
4
5
0.2
0.4
0.6
0.8
-VGS(Volts)
1
1.4
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
30
25
20
15
10
1.6
1.4
1.2
1.0
0.8
ID=-6A, VGS=-2.5V
ID=-5A, VGS=-1.8V
VGS=-1.8V
VGS=-2.5V
ID=-7A, VGS=-4.5V
VGS=-4.5V
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
45
40
35
30
25
20
15
10
125°C
ID=-7A
25°C
125°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO8803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6400
5
4
3
2
1
0
5600
4800
4000
3200
2400
1600
800
VDS=-10V
ID=-7A
Ciss
Coss
Crss
0
0
5
10
15
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
25
30
35
40
45
0
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
TJ(Max)=150°C
TA=25°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
10µs
100µs
RDS(ON)
limited
1ms
10ms
1s
0.1s
10s
1
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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