AOD4100 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD4100 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4100
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
TheꢀAOD4100ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto
provideꢀexcellentꢀRDS(ON),ꢀshootꢁthroughꢀimmunity
andꢀbodyꢀdiodeꢀcharacteristics.ꢀThisꢀdeviceꢀisꢀideally
suitedꢀforꢀuseꢀasꢀaꢀHighꢀsideꢀswitchꢀinꢀCPUꢀcore
powerꢀconversion.
VDSꢀ(V)ꢀ=ꢀ25V
IDꢀ=ꢀ50Aꢀ(VGSꢀ=ꢀ10V)
R
DS(ON)ꢀ<ꢀ6.5mΩꢀ(VGSꢀ=ꢀ20V)
RDS(ON)ꢀ<ꢀ9mΩꢀ(VGSꢀ=ꢀ12V)
DS(ON)ꢀ<ꢀ12mΩꢀ(VGSꢀ=ꢀ10V)
R
ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Bottom View
Top View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
DrainꢁSourceꢀVoltage
VDS
25
±30
50
V
GateꢁSourceꢀVoltage
VGS
V
A
TC=25°CꢀG
TC=100°C
ContinuousꢀDrain
CurrentꢀB
ID
49
PulsedꢀDrainꢀCurrentꢀC
AvalancheꢀCurrentꢀC
IDM
IAR
EAR
120
28
A
RepetitiveꢀavalancheꢀenergyꢀL=0.3mHꢀC
118
50
mJ
TC=25°C
PD
W
PowerꢀDissipationꢀB TC=100°C
TA=25°C
PowerꢀDissipationꢀA TA=70°C
25
6.5
PDSM
W
4.2
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ55ꢀtoꢀ175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16
43
2
Max
19
52
3
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
RθJA
SteadyꢁState
SteadyꢁState
MaximumꢀJunctionꢁtoꢁCaseꢀD
RθJC
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA,ꢀVGS=0V
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
25
V
VDS=20V,ꢀVGS=0V
1
5
IDSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
µA
TJ=55°C
VDS=0V,ꢀVGS=ꢀ±30V
VDS=VGSꢀꢀID=250µA
VGS=12V,ꢀVDS=5V
VGS=20V,ꢀID=20A
IGSS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
Onꢀstateꢀdrainꢀcurrent
100
4
nA
V
VGS(th)
ID(ON)
2
3.2
120
A
5.4
7.5
7.3
9.8
43
6.5
9
TJ=125°C
RDS(ON)
StaticꢀDrainꢁSourceꢀOnꢁResistance
mΩ
VGS=12V,ꢀID=20A
VGS=10V,ꢀID=20A
VDS=5V,ꢀID=20A
IS=1A,VGS=0V
9
12
gFS
VSD
IS
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
S
V
A
0.72
1
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
1100
420
200
0.8
1350
pF
pF
pF
Ω
VGS=0V,ꢀVDS=12.5V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
1.5
24
SWITCHING PARAMETERS
Qg(12V) TotalꢀGateꢀCharge
Qg(10V) TotalꢀGateꢀCharge
20
17
nC
VGS=10V,ꢀVDS=12.5V,ꢀID=20A
Qgs
Qgd
tD(on)
tr
GateꢀSourceꢀCharge
6.5
6.8
9.5
13.5
11.5
5.4
32
nC
nC
ns
ns
ns
ns
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
TurnꢁOnꢀRiseꢀTime
VGS=10V,ꢀVDS=12.5V,ꢀRL=0.68Ω,
R
GEN=0.6Ω
tD(off)
tf
TurnꢁOffꢀDelayTime
TurnꢁOffꢀFallꢀTime
IF=20A,ꢀdI/dt=100A/µs
IF=20A,ꢀdI/dt=100A/µs
trr
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
ns
Qrr
19
nC
A.ꢀTheꢀvalueꢀofꢀRꢀθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1inꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTꢀ Aꢀ=25°C.ꢀThe
PowerꢀdissipationꢀPDSMꢀisꢀbasedꢀonꢀt<10sꢀR ꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀTheꢀvalueꢀinꢀanyꢀꢀgivenꢀapplication
dependsꢀonꢀtheꢀuser'sꢀspecificꢀboardꢀdesign,ꢀandꢀtheꢀmaximumꢀtemperatureꢀofꢀ175°CꢀmayꢀbeꢀusedꢀifꢀtheꢀPCBꢀallowsꢀit.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=175°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupper
dissipationꢀlimitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C:ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀT
=175°C.
J(MAX)
D.ꢀTheꢀRꢀθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀcaseꢀRꢀ θJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300ꢀusꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassumingꢀa
maximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=175°C.ꢀTheꢀSOAꢀcurveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
G.ꢀTheꢀmaximumꢀcurrentꢀratingꢀisꢀlimitedꢀbyꢀbondꢁwires.
H.ꢀTheseꢀtestsꢀareꢀperformedꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀinꢀꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀT A=25°C.
*Thisꢀdeviceꢀisꢀguaranteedꢀgreenꢀafterꢀdataꢀcodeꢀ8X11ꢀ(Sepꢀ1 STꢀ2008).
Re1:ꢀOctꢀ2008
ꢀ
THISꢀPRODUCTꢀHASꢀBEENꢀDESIGNEDꢀANDꢀQUALIFIEDꢀFORꢀTHEꢀCONSUMERꢀMARKET.ꢀAPPLICATIONSꢀORꢀUSESꢀASꢀCRITICALꢀ
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
120
100
80
60
40
20
0
10V
12V
20V
VDS=5V
VGS=8V
125°C
25°C
4
5
6
7
8
9
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
1.6
1.4
1.2
1
VGS=10V
VGS=20V
ID=20A
VGS=12V
VGS=12V
VGS=10V
VGS=10V
VGS=12V
VGS=20V
0.8
0.6
VGS=20V
0
5
10
15
20
25
30
ꢁ50 ꢁ25
0
25
50
75 100 125 150 175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
20
18
16
14
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0Eꢁ01
1.0Eꢁ02
ID=20A
125°C
125°C
25°C
1.0Eꢁ03
6
1.0Eꢁ04
25°C
4
1.0Eꢁ05
2
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
8
10
12
14
16
18
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
20
18
16
14
12
10
8
VDS=12.5V
ID=20A
Ciss
1400
1200
1000
800
600
400
200
0
Coss
6
Crss
4
2
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
220
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
180
140
100
60
100µ
RDS(ON)
limited
1ms
DC
10ms
TJ(Max)=175°C
TC=25°C
0.1
20
0.0
0.0001 0.001
0.01
Pulse Width (s)
0.1
1
10
100
0.01
0.1
1
10
100
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=Tc+PDM.ZθJC.RθJC
R
θJC=3°C/W
PD
0.1
Ton
T
SingleꢀPulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
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AOD4100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
100
80
60
40
20
0
TA=25°C
25°C
150°C
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
100
80
60
40
20
0
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note H)
10
1
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
0.1
0.01
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
T
SingleꢀPulse
0.0001
R
θJA=52°C/W
0.001
0.00001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
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AOD4100
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
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