AOD4102_10 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AOD4102_10 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4102/AOI4102
30V N-Channel MOSFET
General Description
Product Summary
VDS
30V
The AOD4102/AOI4102 uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in PWM,
load switching and general purpose applications.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
19A
< 37mΩ
< 64mΩ
100% UIS Tested
100% Rg Tested
TO251A
IPAK
TO-252
D-PAK
D
Bottom View
Top View
Bottom View
Top View
D
G
G
G
S
S
S
D
D
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
19
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
13
A
Pulsed Drain Current C
IDM
30
TA=25°C
TA=70°C
8
Continuous Drain
Current
IDSM
A
6.5
Avalanche Current C
IAS, IAR
9
12
A
Avalanche energy L=0.3mH C
EAS, EAR
mJ
TC=25°C
Power Dissipation B
TC=100°C
21
PD
W
10
TA=25°C
4.2
PDSM
W
°C
Power Dissipation A
2.7
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
20
Max
30
60
7
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
50
RθJC
4.5
Rev 0: January 2010
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Page 1 of 6
AOD4102/AOI4102
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=12A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
3
µA
V
VGS(th)
ID(ON)
1
1.8
30
A
30
46
37
55
mΩ
T0252
TJ=125°C
VGS=4.5V, ID=7A
TO252
53
64
mΩ
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=12A
TO251A
30.5
53.5
37.5
64.5
VGS=4.5V, ID=7A
TO251A
V
DS=5V, ID=10A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
12
S
V
A
IS=1A,VGS=0V
0.77
1
Maximum Body-Diode Continuous Current
12
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
288
31
360
45
30
1
432
59
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
18
42
VGS=0V, VDS=0V, f=1MHz
0.5
1.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.3
2.5
1.2
1.3
6.6
3.2
1.5
2.2
4.3
10
8
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
4
VGS=10V, VDS=15V, ID=12A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
1.8
3.1
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
ns
tD(off)
tf
12.8
3.2
ns
ns
trr
IF=12A, dI/dt=100A/µs
IF=12A, dI/dt=100A/µs
11
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14
6
17
ns
Qrr
4.5
nC
7.2
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: January 2010
www.aosmd.com
Page 2 of 6
AOD4102/AOI4102
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
10
-40°C
25°C
VDS=5V
6V
7V
5V
4.5V
4V
125°C
3.5V
VGS=3V
0
0
2
3
4
5
6
7
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
80
1.6
1.4
1.2
1.0
0.8
70
60
50
40
30
20
10
0
VGS=4.5V
VGS=10V
ID=12A
VGS=4.5V
VGS=10V
ID=7A
-50 -25
0
25
50
75 100 125 150 175
0
5
10
15
20
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
120
90
60
30
0
1.0E+01
ID=12A
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
-40°C
25°C
25°C
6
0.0
0.2
0.4
0.6
VSD (Volts)
0.8
1.0
1.2
4
5
7
8
9
10
VGS (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: January 2010
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Page 3 of 6
AOD4102/AOI4102
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
600
500
400
300
200
100
0
VDS=15V
ID=12A
8
Ciss
6
4
2
Coss
Crss
0
0
1
2
3
Q
4
5
6
7
0
5
10
15
20
25
g (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
80
60
40
20
0
100.0
10.0
1.0
10µs
100µs
1ms
TJ(Max)=175°C
TC=25°C
RDS(ON)
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7°C/W
PD
0.1
0.01
Ton
T
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: January 2010
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Page 4 of 6
AOD4102/AOI4102
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
25
30
TA=25°C
20
15
10
5
25
20
15
10
5
TA=150°C
0
0
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
0
25
50
75
100
125
150
175
Time in avalanche, tA (s)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
1000
100
10
25
20
15
10
5
TA=25°C
1
0
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: January 2010
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Page 5 of 6
AOD4102/AOI4102
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: January 2010
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Page 6 of 6
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