AOD4104 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD4104 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4104
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
TheꢀAOD4104ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto
provideꢀexcellentꢀRDS(ON),ꢀshootꢁthroughꢀimmunity
andꢀbodyꢀdiodeꢀcharacteristics.ꢀThisꢀdeviceꢀisꢀideally
suitedꢀforꢀuseꢀasꢀaꢀlowꢀsideꢀswitchꢀinꢀCPUꢀcore
powerꢀconversion.
VDSꢀ(V)ꢀ=ꢀ25V
IDꢀ=ꢀ75Aꢀ(VGSꢀ=ꢀ10V)
RDS(ON)ꢀ<ꢀ3.6mΩꢀ(VGSꢀ=ꢀ20V)
RDS(ON)ꢀ<ꢀ4.5mΩꢀ(VGSꢀ=ꢀ12V)
RDS(ON)ꢀ<ꢀ5.4mΩ (VGSꢀ=ꢀ10V)
ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Bottom View
Top View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
DrainꢁSourceꢀVoltage
VDS
25
V
GateꢁSourceꢀVoltage
VGS
±30
75
V
A
TC=25°CꢀG
TC=100°C
ContinuousꢀDrain
CurrentꢀB,G,I
ID
75
PulsedꢀDrainꢀCurrentꢀC
AvalancheꢀCurrentꢀC
IDM
IAR
EAR
200
30
A
RepetitiveꢀavalancheꢀenergyꢀL=0.3mHꢀC
135
100
50
mJ
TC=25°C
PD
W
PowerꢀDissipationꢀB TC=100°C
TA=25°C
PowerꢀDissipationꢀA TA=70°C
2.5
PDSM
W
1.6
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ55ꢀtoꢀ175
°C
Thermal Characteristics
Parameter
Symbol
Typ
16
40
1
Max
20
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
RθJA
SteadyꢁState
SteadyꢁState
50
MaximumꢀJunctionꢁtoꢁCaseꢀB
RθJC
1.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4104
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA,ꢀVGS=0V
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
25
V
VDS=20V,ꢀVGS=0V
0.005
1
5
IDSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
µA
TJ=55°C
VDS=0V,ꢀVGS=ꢀ±30V
IGSS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
Onꢀstateꢀdrainꢀcurrent
100
4
nA
V
VDS=VGSꢀꢀID=250µA
VGS(th)
ID(ON)
2
3
VGS=12V,ꢀVDS=5V
200
A
VGS=20V,ꢀID=20A
3
3.6
5
TJ=125°C
4.2
3.7
4.5
75
RDS(ON)
StaticꢀDrainꢁSourceꢀOnꢁResistance
mΩ
VGS=12V,ꢀID=20A
VGS=10V,ꢀID=20A
VDS=5V,ꢀID=20A
IS=1A,VGS=0V
4.5
5.4
gFS
VSD
IS
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
S
V
A
0.7
1
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
55
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
2100
850
2400
pF
pF
pF
Ω
VGS=0V,ꢀVDS=12.5V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
400
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
0.35
1
SWITCHING PARAMETERS
Qg(12V) TotalꢀGateꢀCharge
40
33
11
14
12
19
15
8.5
42
34
50
nC
nC
nC
nC
ns
Qg(10V) TotalꢀGateꢀCharge
VGS=10V,ꢀVDS=12.5V,ꢀID=20A
Qgs
Qgd
tD(on)
tr
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
TurnꢁOnꢀRiseꢀTime
TurnꢁOffꢀDelayTime
TurnꢁOffꢀFallꢀTime
VGS=10V,ꢀVDS=12.5V,ꢀRL=0.68Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=20A,ꢀdI/dt=100A/µs
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
ns
Qrr
IF=20A,ꢀdI/dt=100A/µs
ꢀ2
nC
A:ꢀTheꢀvalueꢀofꢀRꢀθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1in ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTꢀAꢀ=25°C.ꢀTheꢀPower
dissipationꢀPDSMꢀisꢀbasedꢀonꢀRꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀTheꢀvalueꢀinꢀanyꢀꢀgivenꢀapplicationꢀdependsꢀonꢀthe
user'sꢀspecificꢀboardꢀdesign,ꢀandꢀtheꢀmaximumꢀtemperatureꢀofꢀ175°CꢀmayꢀbeꢀusedꢀifꢀtheꢀPCBꢀallowsꢀit.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=175°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupperꢀdissipation
limitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C:ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=175°C.
D.ꢀTheꢀRꢀθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀcaseꢀRꢀθJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300µꢀ sꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassumingꢀa
maximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=175°C.
G.ꢀTheꢀmaximumꢀcurrentꢀratingꢀisꢀlimitedꢀbyꢀbondꢁwires.
H.ꢀTheseꢀtestsꢀareꢀperformedꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀinꢀꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀT=25°C.ꢀTheꢀSOA
A
curveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
I.ꢀTheꢀmaximumꢀcurrentꢀratingꢀisꢀlimitedꢀbyꢀbondꢁwires.
ST
*Thisꢀdeviceꢀisꢀguaranteedꢀgreenꢀafterꢀdataꢀcodeꢀ8X11ꢀ(Sepꢀ1 ꢀ2008).
Rev1:Octꢀ2008
THISꢀPRODUCTꢀHASꢀBEENꢀDESIGNEDꢀANDꢀQUALIFIEDꢀFORꢀTHEꢀCONSUMERꢀMARKET.ꢀAPPLICATIONSꢀORꢀUSESꢀASꢀCRITICALꢀ
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4104
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
160
120
80
100
80
60
40
20
0
20V
VDS=5V
12V
10V
VGS=8V
125°C
40
25°C
7
0
0
1
2
3
4
5
3
4
5
6
8
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
5.0
1.4
VGS=20V
ID=20A
4.5
4.0
3.5
3.0
2.5
2.0
VGS=10V
1.2
1
VGS=12V
VGS=10V
VGS=10V
VGS=12V
VGS=12V
VGS=20V
0.8
0.6
VGS=20V
0
5
10
15
20
25
30
ꢁ50 ꢁ25
0
25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
14
12
10
8
1.0E+02
1.0E+01
1.0E+00
1.0Eꢁ01
1.0Eꢁ02
ID=20A
125°C
125°C
25°C
6
1.0Eꢁ03
1.0Eꢁ04
25°C
4
1.0Eꢁ05
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
6
8
10
12
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
14
16
18
20
VSD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4104
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
20
16
12
8
VDS=12.5V
ID=20A
Ciss
2500
2000
1500
1000
500
Coss
Crss
4
0
0
0
10
20
30
g (nC)
40
50
60
0
5
10
15
20
25
30
Q
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
200
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
150
100
50
10µs
100µ
1m
DC
TJ(Max)=175°C
TC=25°C
1.0
0.01
0.1
1
10
100
0
VDS (Volts)
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=1.5°C/W
PD
0.1
Ton
T
SingleꢀPulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4104
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
TA=25°C
100
80
60
40
20
0
80
60
40
20
25°C
150°C
0
0.00001
0.0001
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
0.001
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
0.1
0.01
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
T
SingleꢀPulse
0.0001
RθJA=50°C/W
0.001
0.00001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关型号：
©2020 ICPDF网 联系我们和版权申明