AOL1428 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1428 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1428
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1428 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications. Standard Product
AOL1428 is Pb-free (meets ROHS & Sony 259
specifications). AOL1428L is a Green Product
ordering option. AOL1428 and AOL1428L are
electrically identical.
VDS (V) = 30V
ID = 45A (VGS = 10V)
R
DS(ON) <9.5mΩ (VGS = 10V)
DS(ON) <16mΩ (VGS = 4.5V)
R
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
S
D
Bottom tab
connected to
G
drain
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current B
±20
V
A
TC=25°C
49
TC=100°C
ID
34
IDM
Pulsed Drain Current
Continuous Drain
Current H
120
TA=25°C
TA=70°C
18
A
IDSM
IAR
14
Avalanche Current C
30
A
Repetitive avalanche energy L=0.3mH C
EAR
135
mJ
TC=25°C
Power Dissipation B
TC=100°C
43
PD
W
21
TA=25°C
5
3
PDSM
W
Power Dissipation A
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
Symbol
Typ
19
Max
25
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
45
55
RθJC
2.5
3.5
Alpha & Omega Semiconductor, Ltd.
AOL1428
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
uA
µA
TJ=55°C
5
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
0.1
2.5
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.9
V
A
VGS=10V, VDS=5V
GS=10V, ID=20A
120
V
7.7
11.0
13
9.5
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
16.0
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
40
S
V
A
0.74
1.0
46
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1000
340
100
1.3
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
18
8.5
3.1
4.8
5.6
5.5
18.5
5
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=20A
ns
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
R
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
29
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
24
nC
A: The value of R
is measured with the device in a still air environment with TA =25°C.
θJA
B. The power dissipation P is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
D
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin
a maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
Rev1: May 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOL1428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
30
25
20
15
10
5
10V
VDS=5V
7V
4.5V
125°
4V
25°C
3.5
VGS=3.5V
4
0
0
1
2
3
5
1
1.5
2
2.5
GS(Volts)
3
4
VDS (Volts)
V
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
15
13
11
9
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=20A
VGS=4.5
VGS=4.5
VGS=10V
7
0.8
0.6
VGS=10V
5
0
5
10
15
D (A)
20
25
30
-50
-20
10
40
70
100
130
160
Temperature (°C)
I
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
25
20
15
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
25°C
125°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10 12 14 16 18 20
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOL1428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
8
Ciss
1200
900
600
300
0
VDS=15V
ID=20A
6
4
Coss
2
Crss
0
0
5
10
15
20
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
140
10µs
100µ
120
100
80
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
1m
10ms
0.1
DC
60
TJ(Max)=175°C
TC=25°C
0.1
40
20
0.0
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJc.RθJc
RθJC=3.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOL1428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
50
40
30
20
10
0
TA=25°C
0
0
25
50
75
100
125
150
175
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
0.01
T
CASE (°C)
Figure 13: Power De-rating (Note B)
60
40
20
0
140
120
100
80
60
40
20
0
TJ(Max)=150°C
TA=25°C
0.0001 0.001 0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
Ton
T
Single Pulse
0.0001
RθJA=55°C/W
0.001
0.00001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
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