AOL1446_08 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1446_08 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1446
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1446 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 7mΩ (VGS = 10V)
R
DS(ON) < 11mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
Bottom tab
connected to
G
S
drain
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
Continuous Drain
Current B
VGS
±20
85
V
A
TC=25°C G
TC=100°C
ID
70
Pulsed Drain Current
Continuous Drain
Current G
IDM
200
14
TA=25°C
TA=70°C
A
IDSM
IAR
11
Avalanche Current C
30
A
Repetitive avalanche energy L=0.3mH C
EAR
135
100
50
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
TA=25°C
2.1
PDSM
W
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
19.5
48
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-CaseC
Steady-State
Steady-State
60
RθJC
1
1.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1446
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=24V, VGS=0V
0.005
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3
nA
V
VDS=VGS ID=250µA
VGS(th)
ID(ON)
1
2.3
V
GS=10V, VDS=5V
100
A
VGS=10V, ID=20A
5
7
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
6.7
8.4
60
8.1
11
VGS=4.5V, ID=20A
mΩ
S
V
DS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.72
1
V
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1325
535
1600
1.5
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
155
VGS=0V, VDS=0V, f=1MHz
0.95
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
26
13.5
3.2
6.6
7.2
12.5
22
32
18
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
V
GS=4.5V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
10
18
33
36
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
Qrr
ns
IF=20A, dI/dt=100A/µs
29
nC
Body Diode Reverse Recovery Charge
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Revision 2: June 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
10V
4.0V
VDS=5V
125°C
3.5V
25°C
VGS=3V
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
V
DS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
9
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=20A
VGS=10V
8
7
VGS=4.5V
6
5
VGS=10V
50
4
0.8
0
10
20
30
40
60
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
20
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
16
12
8
ID=20A
25°C
125°C
25°C
4
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
8
VDS=15V
ID=20A
2000
1600
1200
800
400
0
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
400
RDS(ON)
TJ(Max)=175°C
TA=25°C
10µs
300
200
100
0
DC
TJ(Max)=175°C
TA=25°C
1
0.1
0.0001 0.001
0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJC=1.5°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
100
80
60
40
20
0
TA=25°C
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
100
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
D=Ton/T
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60 °C/W
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1446
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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