AOL1446L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1446L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1446
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1446 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power
conversion. Standard Product AOL1446 is Pb-free
(meets ROHS & Sony 259 specifications).
VDS (V) = 30V
ID = 85A (VGS = 10V)
R
DS(ON) < 7mΩ (VGS = 10V)
DS(ON) < 11mΩ (VGS = 4.5V)
R
AOL1446L is a Green Product ordering option.
AOL1446 and AOL1446L are electrically identical.
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
S
D
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
30
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current B
VGS
±20
85
TC=25°C G
TC=100°C
ID
70
A
A
IDM
Pulsed Drain Current
Continuous Drain
Current G
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
200
14
TA=25°C
TA=70°C
IDSM
IAR
11
30
A
EAR
135
100
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
2.5
1.6
PDSM
W
Power Dissipation A
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-CaseC
Symbol
Typ
19.5
48
Max
25
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
60
1.5
RθJC
1
Alpha & Omega Semiconductor, Ltd.
AOL1446
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
0.005
2.3
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
30
V
V
DS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
μA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
100
3
nA
V
VGS(th)
ID(ON)
V
V
DS=VGS ID=250μA
1
GS=10V, VDS=5V
100
A
VGS=10V, ID=20A
5
7
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
6.7
8.4
60
8.1
11
mΩ
S
V
V
GS=4.5V, ID=20A
DS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.72
1
V
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1325
535
1600
1.5
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
155
VGS=0V, VDS=0V, f=1MHz
0.95
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
26
13.5
3.2
6.6
7.2
12.5
22
32
18
nC
nC
nC
nC
ns
Qg(4.5V)
Total Gate Charge
V
GS=4.5V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
10
18
33
9
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
Turn-On Rise Time
ns
R
tD(off)
tf
Turn-Off DelayTime
ns
Turn-Off Fall Time
6
ns
trr
IF=20A, dI/dt=100A/μs
IF=20A, dI/dt=100A/μs
29.7
29
36
36
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
Rev0: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
10V
4.0V
VDS=5V
125°C
3.5V
25°C
VGS=3V
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10
9
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=20A
VGS=10V
8
7
VGS=4.5V
6
VGS=10V
5
4
0.8
0
10
20
30
40
50
60
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
20
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
16
12
8
ID=20A
25°C
125°C
25°C
4
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
8
VDS=15V
ID=20A
2000
1600
1200
800
400
0
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
400
RDS(ON)
limited
TJ(Max)=175°C
TA=25°C
10μs
300
200
100
0
1ms
100μs
DC
TJ(Max)=175°C
TA=25°C
1
0.1
0.0001 0.001
0.01
0.1
1
10
100
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJC=1.5°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
90
60
30
0
100
80
60
40
20
0
TA=25°C
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
0.01
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
100
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60 °C/W
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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