AOL1454 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1454 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1454
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1454 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It is ESD
protected. This device is suitable for use as a low side
switch in SMPS and general purpose applications.
Standard Product AOL1454 is Pb-free (meets ROHS
& Sony 259 specifications).
VDS (V) = 40V
ID = 50A (VGS = 10V)
R
DS(ON) < 9mΩ (VGS = 10V)
DS(ON) < 13mΩ (VGS = 4.5V)
R
ESD Protected
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
S
D
G
Bottom tab
connected to
drain
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
Continuous Drain
Current B
±20
50
V
A
H
TC=25°C
TC=100°C
ID
48
Pulsed Drain Current C
Continuous Drain
Current A
IDM
100
17
TA=25°C
TA=70°C
A
IDSM
IAR
13
Avalanche Current C
30
A
Repetitive avalanche energy L=0.3mH C
EAR
135
60
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
30
TA=25°C
5.0
PDSM
W
Power Dissipation A
TA=70°C
3.2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
Symbol
Typ
20
Max
25
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
60
RθJC
1.8
2.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1454
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
40
V
V
DS=40V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
uA
uA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
±100
3
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
1
2
V
A
100
7.5
10
9.0
13
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
GS=4.5V, ID=20A
DS=5V, ID=20A
10.3
47
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
IS=1A,VGS=0V
0.7
1
Maximum Body-Diode Continuous Current
50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1600
320
100
3.4
1920
pF
pF
pF
Ω
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
22
10.5
4.2
4.8
6.5
12.5
33
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
16
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
31
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
33
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C.
A
H. The maximum current rating is limited by bond-wires.
Rev0: Oct 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
-40°C
10V
VDS=5V
25°C
5V
4V
125°C
VGS=3.5V
VGS=3V
-40°C
25°C
125°C
2.5
2
3
3.5
GS(Volts)
Figure 2: Transfer Characteristics
4
4.5
5
5.5
0
1
2
3
4
5
V
V
DS (Volts)
Figure 1: On-Region Characteristics
12
11
10
9
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=20A
VGS=4.5V
ID=5A
8
VGS=10V
7
0.8
0.6
6
0
5
10
15
20
25
30
-50 -25
0
25 50 75 100 125 150 175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
30
25
20
15
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
-40°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
VDS=20V
2000
Ciss
ID=20A
8
6
4
2
0
1600
1200
800
400
0
Coss
Crss
0
4
8
12
16
20
24
0
5
10
15
20
25
30
35
40
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
200
180
160
140
120
100
80
10µs
TJ(Max)=175°C
Tc=25°C
RDS(ON)
limited
10ms
1m
DC
TJ(Max)=175°C
TC=25°C
60
0.1
40
20
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
T
PD
0.1
0.01
Ton
T
Single Pulse
0.0001 0.001
0.00001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
120
100
80
TA=150°C
60
TA=25°C
40
20
0
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
TA=25°C
0.001
0.01
0.1
1
10
100
1000
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
Pulse Width (s)
T
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
T
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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