AOL1700 [FREESCALE]
N-Channel Enhancement Mode Field; N沟道增强型场
| 型号： | AOL1700 |
| 厂家： | 
Freescale |
| 描述： | N-Channel Enhancement Mode Field |
| 文件： | 总6页 (文件大小：617K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1700
N-Channel Enhancement Mode Field
Effect Transistor
General Description
SRFETTM AOL1700 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose applications.
Features
VDS (V) = 30V
ID =85A (VGS = 10V)
RDS(ON) < 4.2mΩ (VGS = 10V)
RDS(ON) < 6.0mΩ (VGS = 4.5V)
Ultra SO-8TM Top View
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
85
V
A
TC=25°C H
TC=100°C
Continuous Drain
Current B
Pulsed Drain Current C
ID
81
200
17
IDM
TA=25°C
TA=70°C
Continuous Drain
Current A
Avalanche Current C
A
IDSM
IAR
13
30
A
Repetitive avalanche energy L=0.3mH C
EAR
135
100
50
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
TA=25°C
2.1
PDSM
W
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range TJ, TSTG
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
19.6
50
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Case D
60
Steady-State
RθJC
1
1.5
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AOL1700
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.1
mA
20
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
0.1
2.2
µA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.2
1.5
VGS=10V, VDS=5V
200
A
VGS=10V, ID=20A
3.4
5.2
4.8
90
4.2
6.5
6.0
mΩ
RDS(ON)
Static Drain-Source On-Resistance
V
GS=4.5V, ID=20A
DS=5V, ID=20A
mΩ
S
V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.36
0.5
85
V
Maximum Body-Diode + Schottky Diode Continuous Current H
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3760 4512
682
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
314
VGS=0V, VDS=0V, f=1MHz
0.75
1.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
62
29
12
12
9.5
8.5
34
9
74
35
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
V
GS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.75Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
18
22
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
27
ns
Qrr
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using steady-state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev3: Dec 2008
2/6
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AOL1700
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
30
10V
5V
VDS=5V
175
150
125
100
75
25
20
15
10
5
7V
6V
4.5V
4.0V
125°
3.5V
VGS=3.0V
3
25°C
50
25
0
0
0
1
2
4
5
1
1.5
2
2.5
3
3.5
4
VDS (Volts)
V
GS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
7
6
5
4
3
2
2
ID=20A
1.8
1.6
1.4
1.2
1
VGS=10V
VGS=4.5V
VGS=4.5V
VGS=10V
0.8
0
5
10
15
20
25
30
0
30
60
90
120
150
180
210
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
8
7
6
5
4
3
2
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
25°C
125°C
25°C
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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AOL1700
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6.00E-09
5.00E-09
10
8
VDS=15V
ID=20A
Ciss
4.00E-09
3.00E-09
2.00E-09
1.00E-09
0.00E+00
6
4
Coss
2
Crss
0
0
10
20
30
40
g (nC)
50
60
70
0
5
10
15
VDS (Volts)
20
25
30
Q
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
1000.0
100.0
10.0
1.0
10µs
180
160
140
120
100
80
TJ(Max)=175°C
TC=25°C
100µ
1ms
RDS(ON)
limited
DC
10ms
100ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
TJ,PK=TC+PDM.ZθJc.RθJc
RθJC=1.5°C/W
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/6
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AOL1700
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
110
100
90
80
70
60
50
40
30
20
10
0
TC=25°C
TC=150°C
0
25
50
75
100 125 150 175
1.0E-07
1.0E-06
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
1.0E-05
1.0E-04
1.0E-03
T
CASE (°C)
Figure 13: Power De-rating (Note B)
100
80
60
40
20
0
100
80
60
40
20
0
TJ(Max)=150°C
TA=25°C
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.01
Single Pulse
0.001
Ton
T
RθJA=60°C/W
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
5/6
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AOL1700
N-Channel Enhancement Mode Field
Effect Transistor
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
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