AOL1458 [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AOL1458 |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1458
30V N-Channel MOSFET
The AOL1458 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
VDS
30V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
46A
< 5.6mΩ
< 9.5mΩ
UltraSO-8TM
D
D
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
46
V
V
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
36
A
A
IDM
300
14
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
11
IAS, IAR
35
A
EAS, EAR
61
mJ
TC=25°C
Power Dissipation B
TC=100°C
43
PD
W
21
TA=25°C
2
PDSM
W
°C
Power Dissipation A
1.2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
24
Max
30
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
53
64
RθJC
2.4
3.5
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
100
µA
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
500
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
1.6
2.1
300
A
4.6
7.1
7.5
50
5.6
8.5
9.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=10A
mΩ
S
VDS=5V, ID=20A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current
50
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1630 2037 2440
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
260
130
0.5
375
220
1.1
490
300
1.7
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
28
13
9
35
16
8.6
4.6
8.8
26
23
6
42
20
10
6.4
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.8
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8
10
15
12
18
ns
Qrr
nC
12
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
5V
6V
VDS=5V
4.5V
4V
7V
VGS=3.5V
125°C
25°C
4
0
1
2
3
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
15
12
9
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
6
VGS=4.5V
ID=20A
3
VGS=10V
0.8
0
0
25
50
75
100 125 150 175 200
0
5
10
15
20
25
30
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
20
15
10
5
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=15V
ID=20A
2500
2000
1500
1000
500
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
Q
20
g (nC)
25
30
35
0
5
10
15
VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
2000
1500
1000
500
0
1000.0
100.0
10.0
1.0
10µs
TJ(Max)=175°C
TC=25°C
100µs
RDS(ON)
1ms
DC
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=3.5°C/W
0.1
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
50
TA=25°C
40
TA=100°C
30
20
TA=150°C
10
TA=125°C
10
0
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
50
TA=25°C
40
30
20
10
0
1
0.00001
0.001
0.1
10
1000
0
25
50
75
100
125
150
175
TCASE (°C)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
R
θJA=64°C/W
0.1
PD
0.01
Single Pulse
0.1
Ton
T
0.001
0.0001
0.001
0.01
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
12
10
8
16
14
12
10
8
3
di/dt=800A/µs
di/dt=800A/µs
2.5
2
125ºC
25ºC
125ºC
Qrr
trr
6
1.5
1
25ºC
6
125ºC
125ºC
25ºC
4
Irm
S
4
2
0.5
0
25ºC
2
0
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
IS (A)
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
20
10
15
12
9
2.5
2
Is=20A
Is=20A
125ºC
8
6
4
2
0
15
10
5
125ºC
trr
25ºC
1.5
1
25ºC
Qrr
125ºC
6
125º
S
25ºC
25ºC
3
0.5
0
Irm
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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