AOL1454_08 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1454_08 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1454
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1454 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It is ESD
protected. This device is suitable for use as a low side
switch in SMPS and general purpose applications.
VDS (V) = 40V
ID = 50A (VGS = 10V)
RDS(ON) < 9mΩ (VGS = 10V)
RDS(ON) < 13mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
ESD Protected
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
G
Bottom tab
connected to
drain
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
50
V
A
H
TC=25°C
Continuous Drain
Current B
TC=100°C
ID
48
Pulsed Drain Current C
IDM
100
12
TA=25°C
TA=70°C
Continuous Drain
Current A
Avalanche Current C
A
IDSM
IAR
10
30
A
Repetitive avalanche energy L=0.3mH C
EAR
135
60
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
30
TA=25°C
2.1
PDSM
W
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range TJ, TSTG
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
20
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Case D
50
60
Steady-State
RθJC
1.8
2.5
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1454
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250uA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
VDS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
uA
5
TJ=55°C
VDS=0V, VGS= ±20V
DS=VGS ID=250µA
VGS=10V, VDS=5V
GS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3
uA
V
V
VGS(th)
ID(ON)
1
2
100
A
V
7.5
10
9.0
13
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
DS=5V, ID=20A
IS=1A,VGS=0V
10.3
47
mΩ
S
V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current
50
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1600 1920
pF
pF
pF
Ω
VGS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
320
100
3.4
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22
10.5
4.2
4.8
6.5
12.5
33
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=20V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=20V, RL=1Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
16
ns
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
31
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
33
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev1: June 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
-40°C
10V
VDS=5V
25°C
5V
4V
125°C
VGS=3.5V
VGS=3V
-40°C
25°C
125°C
2.5
2
3
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
4
4.5
5
5.5
0
1
2
3
4
5
VDS (Volts)
Figure 1: On-Region Characteristics
12
11
10
9
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
I=20A
VGS=4.5V
ID=5A
8
VGS=10V
7
0.8
0.6
6
0
5
10
15
20
25
30
-50 -25
0
25 50 75 100 125 150 175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
30
25
20
15
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
-40°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
VDS=20V
2000
Ciss
ID=20A
8
6
4
2
0
1600
1200
800
400
0
Coss
Crss
0
4
8
12
16
20
24
0
5
10
15
20
25
30
35
40
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
200
180
160
140
120
100
80
10µs
TJ(Max)=175°C
Tc=25°C
RDS(ON)
limited
10ms
1m
DC
TJ(Max)=175°C
TC=25°C
60
0.1
40
20
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
T
PD
0.1
0.01
Ton
T
Single Pulse
0.0001 0.001
0.00001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
120
100
80
TA=150°C
60
TA=25°C
40
20
0
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
TA=25°C
0.001
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
175
Pulse Width (s)
T
CASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
Figure 14: Current De-rating (Note B)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1454
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Vds
VDC
Qgs
Qgd
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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