AOL1702 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOL1702 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOL1702
N-Channel Enhancement Mode Field Effect Transistor
TM
SRFET
General Description
Features
The AOL1702 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOL1702L is Pb-free (meets ROHS & Sony
259 specifications). AOL1702L is a Green Product
ordering option. AOL1702 and AOL1702L are
electrically identical.
VDS (V) = 30V
ID =70A (VGS = 10V)
R
DS(ON) < 5.8mΩ (VGS = 10V)
DS(ON) < 7.2mΩ (VGS = 4.5V)
R
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
Fits SOIC8
footprint !
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
D
Bottom tab
connected to
G
drain
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±12
70
V
A
TC=25°C G
TC=100°C
Continuous Drain
Current B
Pulsed Drain Current C
Continuous Drain
CurrentA
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
52
100
21
IDM
TA=25°C
TA=70°C
A
IDSM
IAR
17
30
A
EAR
135
58
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
29
TA=25°C
5
PDSM
W
Power Dissipation A
TA=70°C
3.2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
Symbol
Typ
20
Max
25
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
60
RθJC
2.1
2.6
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1702
Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
30
V
V
DS=24V, VGS=0V
0.1
mA
20
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
0.1
VGS(th)
ID(ON)
VDS=VGS ID=250µA
GS=4.5V, VDS=5V
VGS=10V, ID=20A
1.5
1.85
2.4
V
A
V
100
4.8
7.2
5.8
9.0
7.2
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
V
GS=4.5V, ID=20A
DS=5V, ID=20A
5.9
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
110
0.37
S
V
A
IS=1A,VGS=0V
0.5
55
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
4000 5000
520
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
217
VGS=0V, VDS=0V, f=1MHz
0.6
0.9
77
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
59
27
12
11
9
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=20A
Qgd
tD(on)
tr
tD(off)
tf
VGS=10V, VDS=15V, RL=0.75Ω,
9
RGEN=3Ω
37
8
IF=20A, dI/dt=300A/µs
IF=20A, dI/dt=300A/µs
trr
16
22
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal
resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be
used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The SOA
A
curve provides a single pulse rating.
Rev0:Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
30
25
20
15
10
5
4.5V
10V
VDS=5V
3.5V
125°
25°C
VGS=3V
0
0
1
2
3
4
5
1
1.5
2
2.5
GS(Volts)
3
3.5
4
V
DS (Volts)
V
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
7
6
5
4
2
ID=20A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
VGS=4.5V
VGS=10V
3
0
0.8
5
10
15
20
25
30
0
30
60
90
120
150
180
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
15
12
9
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
25°C
125°C
25°C
6
3
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
10
8
6000
5000
4000
3000
2000
1000
0
Vds=15V
ID=20A
Ciss
6
4
Crss
2
Coss
0
0
5
10
15
VDS (Volts)
20
25
30
0
10
20
30
40
50
60
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000
120
TJ(Max)=175°C
TC=25°C
100
10
10µs
0.1ms
1ms
100
80
RDS(ON)
limited
DC
10ms
1
TJ(Max)=175°C
TC=25°C
60
0.1
40
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=Ton/T
J,PK=TC+PD.ZθJC.RθJC
PD
T
Ton
RθJC=2.6°C/W
Single Pulse
0.0001
T
0.01
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
160
120
80
40
0
TA=25°C
TA=150°C
0.00001
0.000001
0.0001
0.001
0
25
50
75
100
125
150
175
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
TCASE (°C)
Figure 13: Power De-rating (Note B)
80
60
40
20
0
100
80
60
40
20
0
TJ(Max)=150°C
TA=25°C
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
T
CASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
T
Ton
10
T
RθJA=60°C/W
Single Pulse
0.0001 0.001
0.001
0.00001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.8
0.6
0.4
0.2
0
20A
VDS=24V
10A
5A
VDS=12V
IS=1A
0
50
100
Temperature (°C)
150
200
0
50
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
Figure 18: Diode Forward voltage vs. Junction
Temperature
15
2.5
2
60
50
40
30
20
10
18
15
12
9
125ºC
25ºC
di/dt=1000A/us
di/dt=1000A/us
125ºC
12
9
25ºC
1.5
1
trr
125ºC
Qrr
6
6
25ºC
S
3
0.5
0
Irm
25ºC
25
3
125ºC
0
0
0
0
5
10
15
20
30
0
5
10
15
20
25
30
Is (A)
Is (A)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Figure 20: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
50
45
40
35
30
25
20
15
10
5
15
12
9
27
2.5
2
Is=20A
125ºC
24
21
18
15
12
9
Is=20A
125ºC
25ºC
25ºC
1.5
1
125º
25ºC
Qrr
25ºC
6
trr
S
6
3
0.5
0
125ºC
Irm
3
0
0
0
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
di/dt (A)
di/dt (A)
Figure 22: Diode Reverse Recovery Time and
Soft Coefficient vs. di/dt
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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