AON4413 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AON4413 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4413
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON4413 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard product AON4413 is Pb-free
(meets ROHS & Sony 259 specifications).
VDS (V) = -30V
ID = -6.5A
(VGS = -10V)
RDS(ON) < 46mΩ (VGS = -10V)
RDS(ON) < 60mΩ (VGS = -6V)
D
S
D
D
D
G
D
D
D
S
G
DFN 3x2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
10 Sec
Steady State
-30
Units
Drain-Source Voltage
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
V
A
TA=25°C
TA=70°C
-6.5
-5.3
-4.7
-3.7
ID
Pulsed Drain Current B
IDM
-25
TA=25°C
TA=70°C
3.1
2.0
1.6
1.0
Power Dissipation A
PD
W
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
34
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady State
Steady State
66
80
RθJL
20
25
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4413
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
STATIC PARAMETERS
Parameter
Conditions
Min
Typ
Max Units
BVDSS
Drain-Source Breakdown Voltage
ID = -250µA, VGS = 0V
-30
V
V
DS = -30V, VGS = 0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ = 55°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS = 0V, VGS = ±20V
VDS = VGS ID = -250µA
VGS = -10V, VDS = -5V
VGS = -10V, ID = -6.5A
±100
-2.5
nA
V
VGS(th)
ID(ON)
-1.5
-25
-2
A
38
54
46
65
60
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS = -6V, ID = -5.3A
VDS = -5V, ID = -6.5A
IS = -1A,VGS = 0V
48
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
11
S
V
A
0.77
-1
-3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
668
126
92
830
9
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
6
SWITCHING PARAMETERS
Qg (10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
12.7
6.4
2
17
nC
nC
nC
nC
ns
Qg (4.5V)
8.5
VGS=-10V, VDS=-15V, ID=-6.5A
Qgs
Qgd
tD(on)
tr
4
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.7
6.8
20
10
22
15
VGS=-10V, VDS=-15V, RL=2.3Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=-6.5A, dI/dt=100A/µs
IF=-6.5A, dI/dt=100A/µs
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev1: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
25
20
15
10
5
-5V
-6V
-10V
-4.5V
-4V
VDS=-5V
125°C
6
25°C
-3.5V
4
2
-40°C
VGS=-2.5V
4
0
0
0
1
2
3
5
0
1
2
3
4
5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
80
60
40
20
1.6
1.4
1.2
1.0
0.8
0.6
VGS=-10V
ID=-6.5A
VGS=-6V
VGS=-6V
ID=-5.3A
VGS=-10V
6
0
2
4
8
10
-50
0
50
100
150
200
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
160
140
120
100
80
1E+01
1E+00
1E-01
1E-02
1E-03
ID=-6.5A
125°C
125°C
25°C
60
25°C
1E-04
-40°C
-40°C
40
1E-05
1E-06
20
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
8
1000
800
600
400
200
0
VDS=-15V
ID=-6.5A
Ciss
6
4
Coss
2
Crss
0
0
3
6
9
12
15
0
5
10
15
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
10
100
10
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
100µs
limited
1ms
1
10ms
100mss
10s
TJ(Max)=150°C
TA=25°C
0.1
0.01
DC
1
0.00001
0.001
0.1
10
1000
10
0.1
1
100
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to
Ambient (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=66°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
0.1
P
D
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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