AON4603 [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AON4603 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4603
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AON4603 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AON4603 is Pb-free (meets ROHS
& Sony 259 specifications). AON4603L is a Green
Product ordering option. AON4603 and AON4603L are
electrically identical.
n-channel
p-channel
VDS (V) = 30V
ID = 4A
-30V
-3.6A
(VGS= ±10V)
R
DS(ON) < 75mΩ < 100mΩ (VGS = ±10V)
DS(ON) < 115mΩ < 180mΩ (VGS = ±4.5V)
R
D1
D2
1
2
3
4
8
7
6
5
S1
G1
S2
G2
D1
D1
D2
D2
G2
G1
S2
S1
DFN2X3
Absolute Maximum Ratings TA=25°C unless otherwise noted
p-channel
n-channel
Parameter
Symbol
Max n-channel Max p-channel
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
30
±20
-30
±20
V
V
VGS
TA=25°C
TA=70°C
4
-3.6
ID
3.2
-2.9
A
Pulsed Drain Current B
IDM
12
-12
TA=25°C
TA=70°C
1.9
2.1
PD
W
Power Dissipation
1.2
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
°C
Thermal Characteristics: n-channel
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
54
102
58
65
125
70
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Steady-State
Steady-State
Maximum Junction-to-Lead C
Thermal Characteristics: p-channel
Parameter
RθJL
Symbol
Typ
50
Max
60
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
RθJA
Steady-State
Steady-State
85
41
110
50
RθJL
Alpha & Omega Semiconductor, Ltd.
AON4603
N-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
100
3
nA
V
VGS(th)
ID(ON)
V
V
V
DS=VGS ID=250µA
GS=10V, VDS=5V
GS=10V, ID=4A
1
1.9
12
A
55
78
75
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
GS=4.5V, ID=2A
95
115
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=4A
IS=1A
5.4
0.82
S
V
A
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
200
40
260
3.5
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
20
2.3
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.5
3.1
1.2
1.6
3.3
2.5
13.2
1.7
9.4
3.5
8.5
4
nC
nC
nC
nC
ns
V
GS=10V, VDS=15V, ID=4A
Qgd
tD(on)
tr
tD(off)
tf
VGS=10V, VDS=15V, RL=3.75Ω,
RGEN=3Ω
ns
ns
ns
trr
IF=4A, dI/dt=100A/µs
IF=4A, dI/dt=100A/µs
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 0 : March 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha and Omega Semiconductor, Ltd.
AON4603
N-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
10
8
15
12
9
10V
8V
5V
VDS=5V
6V
4.5V
6
4V
4
6
3.5V
125°
2
3
25°C
VGS=3V
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
120
110
100
90
1.8
1.6
1.4
1.2
1
VGS=10V
ID=4A
VGS=4.5V
80
VGS=4.5V
ID=2A
70
60
50
VGS=10V
40
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
250
200
150
100
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=4A
125°C
125°
25°
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
AON4603
N-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
400
300
200
100
0
10
8
VDS=15V
ID=4A
Ciss
6
4
Coss
Crss
2
0
0
1
2
3
4
5
6
7
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
20
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
15
10
5
10µs
RDS(ON)
limited
100µs
1ms
0.1s
10ms
1s
10s
DC
0.1
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha and Omega Semiconductor, Ltd.
AON4603
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
±100
-3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1
-2
VGS=-10V, VDS=-5V
-12
A
VGS=-10V, ID=-3.6A
81
115
136
4.8
100
180
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
mΩ
S
VGS=-4.5V, ID=-2A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-3.6A
IS=-1A,VGS=0V
-0.82
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
260
55
340
6.5
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
44
VGS=0V, VDS=0V, f=1MHz
4.3
SWITCHING PARAMETERS
Qg(10)
Qg(4.5)
Qgs
Qgd
tD(on)
tr
Total Gate Charge(10V)
Total Gate Charge(4.5V)
Gate Source Charge
5.8
3
7
4
nC
nC
nC
nC
ns
VGS=-10V, VDS=-15V, ID=-3.6A
0.78
1.6
7
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=4.2Ω,
6
ns
R
GEN=3Ω
tD(off)
tf
Turn-Off DelayTime
15
ns
Turn-Off Fall Time
7.5
12.5
5.5
ns
trr
IF=-3.6A, dI/dt=100A/µs
IF=-3.6A, dI/dt=100A/µs
15
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 0 : March 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AON4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
8
20
15
10
5
-10V
-7V
VDS=-5V
25°C
-9V
-6V
-8V
6
-5V
125°C
V
=-4.5V
GS
4
-4V
2
-3.5V
-3V
0
0
0
1
2
3
4
5
1
2
3
4
5
6
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
200
150
100
50
1.6
1.4
1.2
1
VGS=-10V
ID=-3.6A
VGS=-4.5V
VGS=-4.5V
ID=-2A
VGS=-10V
0.8
0
1
2
3
4
5
6
0
25
50
75
100 125 150 175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
300
250
200
150
100
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-3.6A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AON4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
500
400
300
200
100
0
10
8
VDS=-15V
ID=-3.6A
Ciss
6
4
Coss
2
Crss
0
0
1
2
3
4
5
6
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
20
15
10
5
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
0.1s
DC
100µs
1ms
1s
10ms
10s
1
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
PD
0.1
Ton
T
Single Pulse
0.0001 0.001
0.01
0.00001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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