AON4701L [AOS]
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode; P沟道增强型场效应晶体管，肖特基二极管
| 型号： | AON4701L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 文件： | 总5页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
VDS (V) = -20V
ID = -3.4A (VGS = -4.5V)
The AON4701 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. A
Schottky diode is provided to facilitate the implementation
of a bidirectional blocking switch, or for DC-DC
conversion applications. Standard Product AON4701 is
Pb-free (meets ROHS & Sony 259 specifications).
AON4701L is a Green Product ordering option. AON4701
and AON4701L are electrically identical.
RDS(ON) < 90mΩ (VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -2.5V)
RDS(ON) < 160mΩ (VGS = -1.8V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A
D
K
1
2
3
4
8
7
6
5
A
A
S
G
K
K
D
D
G
S
A
DFN3X2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
-20
Schottky
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±8
TA=25°C
TA=70°C
-3.4
ID
Continuous Drain Current A
Pulsed Drain Current B
-2.7
A
IDM
-15
VKA
Schottky reverse voltage
20
1.9
1.2
V
A
TA=25°C
TA=70°C
IF
IFM
Continuous Forward Current A
Pulsed Forward Current B
7
TA=25°C
TA=70°C
1.7
1.1
0.96
0.62
PD
W
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
°C
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
49
Max
75
Units
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
81
37
100
45
Steady-State
°C/W
Maximum Junction-to-Lead C
Steady-State
RθJL
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
60
89
40
75
130
50
t ≤ 10s
RθJA
RθJL
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
°C/W
AON4701
Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-16V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS=±8V
DS=VGS ID=-250µA
GS=-4.5V, VDS=-5V
GS=-4.5V, ID=-3.4A
±100
-1
nA
V
VGS(th)
ID(ON)
-0.3
-15
-0.63
A
73
102
95
90
mΩ
TJ=125°C
125
120
160
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
VGS=-2.5V, ID=-2.5A
GS=-1.8V, ID=-1.5A
V
123
7
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-3.4A
IS=-1A,VGS=0V
4
-0.83
-1
-2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
540
72
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
49
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
6.1
0.6
1.6
10
nC
nC
nC
ns
ns
ns
ns
V
GS=-4.5V, VDS=-10V, ID=-3.8A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=-4.5V, VDS=-10V, RL=2.6Ω,
Turn-On Rise Time
12
RGEN=3Ω
tD(off)
tf
Turn-Off DelayTime
44
Turn-Off Fall Time
22
trr
IF=-3.8A, dI/dt=100A/µs
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
I =-3.8A, dI/dt=100A/µs
F
7.5
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=0.5A
0.39
34
0.5
0.1
20
V
VR=16V
Irm
Maximum reverse leakage current
mA
VR=16V, TJ=125°C
CT
trr
Qrr
Junction Capacitance
VR=10V
pF
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
5.2
0.8
10
SchottkyReverse Recovery Time
Schottky Reverse Recovery Charge
ns
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 0. December 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
15
-4.5V
VDS=-5V
-3.0V
-2.5V
-8V
4
2
0
10
5
-2.0V
125°C
VGS=-1.5V
25°C
0
0
1
2
3
4
5
0
0.5
1
1.5
2
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
160
150
140
130
120
110
100
90
1.8
1.6
1.4
1.2
1
VGS=-1.8V
VGS=-2.5V
ID=-2.5A
VGS=-1.8V
VGS=-2.5V
ID=-1.5A
VGS=-4.5V
ID=-3.4A
VGS=-4.5V
80
70
60
50
0.8
0
1
2
3
4
5
6
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
200
150
100
50
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
ID=-3.4A
125°C
25°C
125°C
25°C
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
600
400
200
0
5
4
3
2
1
0
VDS=-10V
ID=-3.4A
Ciss
Crss
Coss
0
2
4
6
8
0
5
10
-VDS (Volts)
15
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
20
15
10
5
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
TA=25°C
100μs
10μs
RDS(ON)
limited
1ms
0.1s
DC
10ms
1s
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
80
60
40
20
0
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°C
f = 1MHz
25°C
0.2 0.4
0.0
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
VF (Volts)
VKA (Volts)
Figure 12: Schottky Forward Characteristics
Figure 13: Schottky Capacitance Characteristics
0.5
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.4
0.3
0.2
0.1
IF=0.5A
VR=16V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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