AON4420L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AON4420L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4420L
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON4420L combines advanced trench MOSFET
technology with a small footprint package to provide low
RDS(ON) per unit area. This device is ideal for load switch
and high speed switching applications.
VDS (V) = 30V
ID = 10A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
R
R
DS(ON) < 19mΩ
DS(ON) < 25mΩ
- RoHS Compliant
- Halogen Free
DFN 3x2
D
Top View
Bottom View
Pin 1
D
D
D
G
D
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current C
30
±20
50
10
8
V
V
VGS
IDM
Continuous Drain
Current A
TA=25°C
TA=70°C
TA=25°C
TA=70°C
A
ID
1.6
1
PD
W
Power Dissipation A
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
34
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead B
66
80
Steady-State
Steady-State
RθJL
20
25
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4420L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID = 250µA, VGS = 0V
30
V
VDS = 30V, VGS = 0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ = 55°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS = 0V, VGS = ±20V
±100
2.5
nA
V
VGS(th)
ID(ON)
VDS = VGS ID = 250µA
1.4
50
1.9
V
GS = 10V, VDS = 5V
GS = 10V, ID = 10A
A
V
16
27
20
26
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS = 4.5V, ID = 8A
VDS = 5V, ID = 10A
IS = 1A,VGS = 0V
21
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
S
V
A
0.75
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
440
80
35
2
550
110
55
660
140
80
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
4
6
SWITCHING PARAMETERS
Qg (10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
8
9.8
4.6
1.8
2.2
5
12
5.5
2.2
3
nC
nC
nC
nC
ns
Qg (4.5V)
4
VGS=10V, VDS=15V, ID=10A
Qgs
Qgd
tD(on)
tr
1.5
1.3
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.5Ω,
3.2
24
6
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=10A, dI/dt=300A/µs
IF=10A, dI/dt=300A/µs
8
11
13
14
16
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
11
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev0: July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
10V
4.5V
VDS=5V
4V
125°C
3.5V
25°C
VGS=3V
0
1
2
3
4
5
0
1
2
3
GS(Volts)
4
5
VDS (Volts)
V
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
30
25
20
15
10
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
ID=10A
VGS=4.5V
VGS=4.5V
ID=8A
VGS=10V
68
0
2
4
10
-50
0
50
100
150
200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
60
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
ID=10A
50
40
125°C
125°C
30
G
1E-04
25°C
25°C
20
1E-05
1E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
V
SD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
600
400
200
0
10
8
VDS=15V
ID=10A
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
1000
100
10
100
10
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
1
10ms
100ms
10s
0.1
0.01
TJ(Max)=150°C
TA=25°C
DC
1
0.00001
0.001
0.1
10
1000
0.1
1
10
100
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=80°C/W
1
0.1
PD
G
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4420L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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